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COMPACT HYBRID PHOTO-DETECTOR
PRELIMINARY DATA SEPT. 2000
with Si-Avalanche Diode Target
R7110U-07
APPLICATIONS
q High energy physics q Medical q Other high precision measurements
FEATURES
q Low excess noise q High gain q Operable in high magnetic fields q Low hysteresis
GENERAL
Parameter Spectral Response Wavelength of Maximum Response Material Photocathode Minimum Effective Area a Window Material Target Suitable Socket Description/Value 160 to 850 420 Multialkali 8 Synthetic Silica 3 mm Single-element Electron Bombarded Si-Avalanche Diode E678-12M (Supplied) Unit nm nm -- mm dia. -- -- --
MAXIMUM RATINGS (Absolute Maximum Values)
Parameter Supply Voltage Avalanche Diode Reverse Bias Voltage Ambient Temperature Value -8500 155 b -40 to +50 Unit Vdc V C
CHARACTERISTICS (at 25 C)
Cathode Sensitivity Gain c Time Response c Diode (Target) Rise Time Fall Time Width Leakage Current d Capacitance d Parameter Luminous (2856K) Radiant at 420 nm Min. 100 -- -- -- -- -- -- -- Typ. 130 51 4 x 104 1.3 15 5 -- 120 Max. -- -- -- -- -- -- 50 -- Unit A/lm mA/W -- ns ns ns nA pF
NOTE: aWithout magnetic fields bat 25 C cPhotocathode Voltage: - 8 kV, Avalanche Diode Reverse Bias Voltage: approx.145 V dAvalanche Diode Reverse Bias Voltage: approx.145 V
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office. Information furnished by HAMAMATS U is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. (c) 2000 Hamamatsu Photonics K.K.
COMPACT HYBRID PHOTO-DETECTOR with Si-Avalanche Diode Target R7110U-07
Figure 1: Typical Gain
105
TPMHB0408EA
Figure 2: Typical Photoelectron Spectrum
TPMHB0409EA
3000 SUPPLY VOLTAGE: -8 kV SINGLE P.E. SUPPLY VOLTAGE: -8 kV APD BIAS VOLTAGE: 150 V PRE-AMP: ORTEC 142A
COUNTS PER CHANNEL
2000
GAIN
104
1000
10
3
0 0 50 100 150 0 500 1000
APD BIAS VOLTAGE (V)
ADC CHANNEL NUMBER
Figure 3: Connection Example for Pulse Height Analysis
Figure 4: Dimensional Outline (Unit: mm)
20.0 0.1 8 MIN. INPUT WINDOW -HV 2 DIODE IC CATHODE ANODE 2.54 0.2 IC IC IC: Internal Connect (should not be used) 10.16 0.2 18.0 0.5
TPMHA0397EC
CATHODE
ANODE
PHOTOCATHODE
CHARGE AMP (EX. ORTEC 142A) SIGNAL
BIAS (MAX. 155 V)
TPMHC0145EC
HOMEPAGE URL http://www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Electron Tube Center 314-5, Shimokanzo, Toyooka-village, Iwata-gun, Shizuoka-ken, 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P. O. Box 6910, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218 E-mail: usa@hamamatsu.com Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 E-mail: info@hamamatsu.de France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10 E-mail: infos@hamamatsu.fr United Kingdom: Hamamatsu Photonics UK Limited: Lough Point, 2 Gladbeck Way, Windmill Hill, Enfield, Middlesex EN2 7JA, United Kingdom, Telephone: 44(20)8-367-3560, Fax: 44(20)8-367-6384 E-mail: info@hamamatsu.co.uk North Europe: Hamamatsu Photonics Norden AB: Smidesvagen 12, SE-171-41 SOLNA, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01 E-mail: info@hamamatsu.se Italy: Hamamatsu Photonics Italia: S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741 E-mail: info@hamamatsu.it TPMH1174E04
SEPT. 2000 IP Printed in Japan (1000)

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