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INFRARED DETECTOR
MCT photoconductive detector
P2748/P5274 series, P3257-50
Dewar type detector with high sensitivity and high-speed response in long wavelength range
Features
The band gap can be adjusted by controlling the composition ratio of HgTe and CdTe. Utilizing this fact, various types are available in different spectral characteristics. l Photoconductive element that decreases its resistance by input of infrared light l Micro-cooled type available This type of cooling does not require pour-filled liquid nitrogen. l Custom devices available Custom devices not listed in this catalog are also available with different spectral response, active area sizes and number of elements. Glass dewar type not requiring repumping is also provided.
Applications
l Choice of spectral response range (up to 25 m)
l FTIR l Infrared spectrophotometer l Thermal imaging l Remote sensing l CO2 laser detection
Accessories (Optional)
l Valve operator A3515 l Amplifiers for dewar type MCT photoconductive detector C5185 l Infrared detector module with preamp P7752-10
s General rating / Absolute maximum ratings
Dimensional outline/ Window material * 1 /Z /Z /Z /K /Z Nitrogen maintenance Active area time Cooling Min. (h) (mm) 1x1 1x1 12 LN2 0.25 x 0.25 1x1 1x1 Micro-cooled 1x1 Absolute maximum ratings Allowable Operating Storage current temperature temperature Topr Tstg (mA) (C) (C) 40 40 -40 to +60 -55 to +60 20 40 20 40 -40 to +55 -45 to +55
Type No.
Package
P2748-40 P2748-41 P2748-42 P5274 P5274-01 P3257-50
Side-on type metal dewar Head-on type metal dewar Side-on type metal dewar Stirling type metal
s Electrical and optical characteristics (Typ. unless otherwise noted)
Measurement Peak Photo condition Cut-off sensitivity sensitivity *2 Ele m e nt wavelength wavelength S te m p erature c p =p T (C) (m) (m) (V/W) 1000 1000 10000 500 250 1000 D (500, 1200, 1) D (p, 1200, 1) NEP =p Rise Dark time resistance tr 0 to 63 % Rd
Type No.
(s) () P2748-40 P2748-41 2 x 1010 4.0 x 1010 0.6 40 12 14 1 x 1010 P2748-42 -196 P5274 14 17 2 x 109 1 x 1010 1.5 x 1010 0.6 30 9 9 P5274-01 17 22 1 x 10 5 x 10 1.0 x 1010 0.4 100 P3257-50 2 x 1010 4.0 x 1010 0.6 40 12 14 1 x 1010 *1: Window material K: KRS-5, Z: ZnSe *2: Photo sensitivity changes with the bias current. The values in the above table are measured with the optimum bias current.
Min. Typ. (cm* Hz 1/2 /W) (cm* Hz 1/2 /W) (c m* Hz 1/2 / W)
(W/Hz1/2) 2.5 x 10-12 2.5 x 10-12 6.3 x 10-12 6.7 x 10-12 1.0 x 10-11 2.5 x 10-12
1
MCT photoconductive detector
s Spectral response
10
11
P2748/P5274 series, P3257-50
s S/N vs. bias current
(Typ. T= -196 C) P2748-40
20 D* 16
(Typ.)
D* (cm * Hz 2 /W)
1010
RELATIVE VALUE
P5274
1
12 S 8
10
9
P5274-01
4 N
108 0 5 10 15 20 25
0
5
10
15
20
25
WAVELENGTH (m)
KIRDB0072EC
BIAS CURRENT (mA)
KIRDB0073EB
Spectral response can be shifted upon request.
The detector must be operated in a range where the D* becomes Max.
s Noise frequency characteristic
100 (Typ. )
s Measurement circuit
CHOPPER 1200 Hz BAND-PASS FILTER
r.m.s. METER
NOISE (nV/Hz 2 )
DETECTOR BLACK BODY 500 K fo=1200 Hz f=120 Hz INCIDENT ENERGY: 2.64 W/cm2
1
10
KIRDC0007EA
1 10
100
1000
10000
FREQUENCY (Hz)
KIRDB0074EC
2
MCT photoconductive detector
s Dimensional outlines (unit: mm) P2748-40/-42, P5274 series
LN2 FILL PORT 12.5
P2748/P5274 series, P3257-50
51 1
32 1
63.5 1 28.5 PUMP-OUT PIPE 9.5
44.5 1 46 1
72 1
102 1
95 1
SIGNAL OUTPUT LEAD
172 2
PHOTOSENSITIVE SURFACE
37 1
6.5
10 0.5
66.8 1
DETECTOR NC DETECTOR
KIRDA0131ED
P2748-41
LN2 FILL PORT 12.5
32 1
66 MAX. 63.5 1 28.5 PUMP-OUT PORT 9.5
46 1
10 1
70 2
102 2
95 2
OUTPUT PIN
6.5
PHOTOSENSITIVE SURFACE
10 0.5
51.2 1
DETECTOR NC DETECTOR
KIRDA0129EB
7.9 1
173.5 2
3
MCT photoconductive detector
P3257-50
P2748/P5274 series, P3257-50
PUMP-OUT VALVE 10 MAX.
12.8 38.9 MAX.
10.6 MAX. 29.0 MAX. 26.7 -0.01 22
+0
12.7
(2 x) 56UNC-2B DEPTH: 5.5 4PL MOUNTING HOLE
FOV
PHOTOSENSITIVE SURFACE
28.3 MAX. 50.8 0.1 56.0 0.3
23.8
OUTPUT PIN
MOUNT SIDE 58
43 36.4 (4 x) 2.5
39.4 34.8 MAX.
25.9
26.8
20.1 MAX.
70.0
27.4 MAX. 50.1 MAX.
14.5 MAX. 50.3 MAX. 81.1 MAX.
76.5
Board thickness including mounted components: 20 MAX.
KIR
KIRDA0130EA
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. (c)2007 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvagen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Cat. No. KIRD1021E05 Mar. 2007 DN
4

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