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| TN0602 TN0604 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS 20V 40V 40V RDS(ON) (max) 0.75 0.75 1.0 ID(ON) (min) 4.0A 4.0A 4.0A VGS(th) (max) 1.6V 1.6V 1.6V Order Number / Package TO-92 -- TN0604N3 -- SOW-20* -- -- TN0604WG 7 * Same as SO-20 with 300 mil wide body. Features Low threshold -- 1.6V max. High input impedance Low input capacitance -- 140pF typical Fast switching speeds Low on resistance Free from secondary breakdown Low input and output leakage Complementary N- and P-channel devices Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex's vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Applications Logic level interfaces - ideal for TTL and CMOS Solid state relays Battery operated systems Photo voltaic drives Analog switches General purpose line drivers Telecom switches Package Options Absolute Maximum Ratings Drain-to-Source Voltage Drain-to-Gate Voltage Gate-to-Source Voltage Operating and Storage Temperature Soldering Temperature* * Distance of 1.6 mm from case for 10 seconds. SGD BVDSS BVDGS 20V -55C to +150C 300C TO-92 SOW-20 Notes: 1. See Package Outline section for dimensions. 2. See Array section for quad pinouts. 7-47 TN0602/TN0604 Thermal Characteristics Package TO-92 SOW-20 ID (continuous)* 1.0A ID (pulsed) 4.6A Power Dissipation @ TC = 25C 1W C/W 125 jc C/W 170 ja IDR* 1.0A IDRM 4.6A Refer to Arrays & Special Functions Section. * ID (continuous) is limited by max rated Tj. Electrical Characteristics (@ 25C unless otherwise specified) Symbol BVDSS VGS(th) VGS(th) IGSS IDSS Parameter Drain-to-Source Breakdown Voltage Gate Threshold Voltage Change in VGS(th) with Temperature Gate Body Leakage Zero Gate Voltage Drain Current TN0604 TN0602 Min 40 20 0.6 -3.8 1.6 -4.5 100 10 1.0 ID(ON) RDS(ON) ON-State Drain Current 1.5 4.0 Static Drain-to-Source ON-State Resistance TO-92/SOW-20 TO-92 SOW - 20 RDS(ON) GFS CISS COSS CRSS td(ON) tr td(OFF) tf VSD trr Change in RDS(ON) with Temperature Forward Transconductance Input Capacitance Common Source Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Drop Reverse Recovery Time 1.2 300 0.5 0.5 0.8 140 75 25 190 110 50 10 6.0 25 20 1.8 V ns VGS = 0V, ISD = 1.5A VGS = 0V, ISD = 1A ns VDD = 20V ID = 0.5A RGEN = 25 pF 2.1 7.0 1.0 0.6 1.6 0.75 1.0 0.75 %/C VGS = 10V, ID = 1.5A VDS = 20V, ID = 1.5A VGS = 0V, VDS = 20V f = 1 MHz V mV/C nA A mA VGS = VDS, ID = 1.0mA VGS = VDS, ID = 2.5mA VGS = 20V, VDS = 0V VGS = 0V, VDS = Max Rating VGS = 0V, VDS = 0.8 Max Rating TA = 125C VGS = 5V, VDS = 20V VGS = 10V, VDS = 20V VGS = 5V, ID = 0.75A VGS = 10V, ID = 1.5A Typ Max Unit V Conditions VGS = 0V, ID = 2.0mA A Notes: 1: All D.C. parameters 100% tested at 25C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2: All A.C. parameters sample tested. VDD Switching Waveforms and Test Circuit 10V 90% INPUT 0V 10% t(ON) td(ON) VDD OUTPUT 0V 90% 90% tr t(OFF) td(OFF) tF D.U.T. 10% 10% INPUT PULSE GENERATOR Rgen RL OUTPUT 7-48 TN0602/TN0604 Typical Performance Curves Output Characteristics 10 10 Saturation Characteristics 8 VGS = 10V 8 VGS = ID (amperes) ID (amperes) 6 9V 8V 6 10V 9V 8V 4 7V 6V 4 7V 6V 2 5V 4V 2 5V 4V 3V 0 0 10 20 30 40 50 3V 0 0 2 4 6 8 10 VDS (volts) Transconductance vs. Drain Current 2.0 10 VDS (volts) Power Dissipation vs. Case Temperature 7 VDS = 25V DS 8 GFS (siemens) 1.0 TA = 25C TA = 125C PD (watts) TA = -55C 6 4 2 TO-92 0 0 1 2 3 4 5 6 7 0 0 25 50 75 100 125 150 ID (amperes) Maximum Rated Safe Operating Area 10 1.0 TC ( C) Thermal Response Characteristics Thermal Resistance (normalized) TO-92 (pulsed) 0.8 ID (amperes) 1.0 0.6 TO-92 (DC) 0.1 0.4 0.2 TO-92 TC = 25C PD = 1W T C = 25C 0.01 0.1 1 10 100 0 0.001 0.01 0.1 1 10 VDS (volts) tp (seconds) 7-49 TN0602/TN0604 Typical Performance Curves BVDSS Variation with Temperature 2.0 1.1 On-Resistance vs. Drain Current VGS = 5V BVDSS (normalized) RDS(ON) (ohms) VGS = 10V 1.0 1.0 0.9 0 -50 0 50 100 150 0 5.0 10.0 Tj (C) Transfer Characteristics 10 ID (amperes) V(th) and RDS Variation with Temperature 1.4 1.4 VDS = 25V 8 VGS(th) (normalized) ID (amperes) 6 C 5 C -5 25 = = TA TA 5 12 C 1.2 V(th) @ 1mA 1.2 1.0 R DS @ 10V, 1.5A 1.0 4 = TA 2 0.8 0.8 0.6 0 0 2 4 6 8 10 -50 0 50 100 150 0.6 VGS (volts) Capacitance vs. Drain-to-Source Voltage 200 10 Tj (C) Gate Drive Dynamic Characteristics f = 1MHz 150 8 C ISS VDS = 10V C (picofarads) VGS (volts) 170 pF 6 170 pF 100 COSS 50 4 VDS = 40V CRSS 2 0 0 10 20 30 40 0 0 1.0 2.0 3.0 4.0 5.0 VDS (volts) QG (nanocoulombs) 7-50 RDS(ON) (normalized) |
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