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SSM3J112TU
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type
SSM3J112TU
High Speed Switching Applications
* * 4V drive Low on-resistance: Ron = 790m (max) (@VGS = -4 V) Ron = 390m (max) (@VGS = -10 V)
0.650.05 2.10.1 1.70.1 +0.1 0.3 -0.05 3 0.1660.05
Unit: mm
Absolute Maximum Ratings (Ta = 25C)
Characteristic Drain-Source voltage Gate-Source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDS VGSS ID IDP PD (Note 1) PD (Note 2) Tch Tstg Rating -30 20 -1.1 -2.2 800 500 150 -55~150 Unit V V A mW C C
2.00.1
1 2
0.70.05
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on ceramic board. (25.4 mm x 25.4 mm x 0.8 mm, Cu Pad: 645 mm2 ) Note 2: Mounted on FR4 board. (25.4 mm x 25.4 mm x 1.6 mm, Cu Pad: 645 mm2 )
Note:
1: Gate 2: Source 3: Drain UFM JEDEC JEITA TOSHIBA 2-2U1A
Weight: 6.6 mg (typ.)
Electrical Characteristics (Ta = 25C)
Characteristic Drain-Source breakdown voltage Drain cut-off current Gate leakage current Gate threshold voltage Forward transfer admittance Drain-Source on-resistance Input capacitance Output capacitance Reverse transfer capacitance Switching time Turn-on time Turn-off time Symbol V (BR) DSS V (BR) DSX IDSS IGSS Vth Yfs RDS (ON) Ciss Coss Crss ton toff VDSF Test Conditions ID = -1 mA, VGS = 0 ID = -1 mA, VGS = +20 V VDS = -30 V, VGS = 0 VGS = 16V, VDS = 0 VDS = -5 V, ID = -0.1 mA VDS = -5 V, ID =- 0.5 A ID = -0.5 A, VGS = -10 V ID = -0.5 A, VGS = -4 V (Note3) (Note3) (Note3) Min -30 -15 -0.8 0.5 (Note3) Typ. 1.0 310 610 86 25 14 14 8.5 0.85 Max -1 1 -1.8 390 790 1.2 Unit V A A V S m pF pF pF ns V
VDS = -15 V, VGS = 0, f = 1 MHz VDS = -15 V, VGS = 0, f = 1 MHz VDS = -15 V, VGS = 0, f = 1 MHz VDD = -15 V, ID = -0.5 A, VGS = 0~-4 V, RG = 10 ID = 1.1A, VGS = 0 V
Drain-Source forward voltage
Note3: Pulse test
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SSM3J112TU
Switching Time Test Circuit
(a) Test circuit
0 IN RG RL VDD -4 V 90% OUT
(b) VIN
0V
10%
-4V
10 s
(c) VOUT
VDS (ON)
90% 10% tr ton toff tf
VDD = -10 V RG = 4.7 D.U. < 1% = VIN: tr, tf < 5 ns Common Source Ta = 25C
VDD
Marking
3
Equivalent Circuit (top view)
3
JJ5
1 2 1 2
Precaution
Vth can be expressed as the voltage between gate and source when the low operating current value is ID=-0.1mA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth, and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on)) Take this into consideration when using the device.
Handling Precaution
When handling individual devices which are not yet mounted on a circuit board, be sure that the environment is protected against electrostatic discharge. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials.
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SSM3J112TU
ID - VDS
-2 -10 -4.5 -4.0 Common Source Ta = 25C -10000 Common Source VDS = -5 V
ID - VGS
-1000
(mA)
(A)
-1.5 -3.5 -1 -3.0 -0.5 VGS = -2.5 V
-100
Drain current ID
Drain current ID
Ta = 100C
-25C
-10 25C -1
-0.1
0 0
-0.5
-1
-1.5
-2
-0.01 0
-1
-2
-3
-4
-5
Drain-Source voltage
VDS (V)
Gate-Source voltage
VGS (V)
RDS (ON) - ID
1 Common Source Ta = 25C 0.8 VGS = -4 V 1.6 2
RDS (ON) - VGS
Common Source ID = -0.5 A
Drain-Source on resistance RDS (ON) ()
0.6
Drain-Source on resistance RDS (ON) ()
1.2
0.4
-10 V
0.8 Ta = 100C 0.4 -25C
0.2
25C
0 0
-0.5
-1.0
-1.5
-2.0
0 0
-5
-10
-15
-20
Drain current ID (A)
Gate-Source voltage
VGS (V)
RDS (ON) - Ta
1.2 Common Source ID = -0.5 A -3
Vth - Ta
Common Source VDS = -5 V ID = -0.1 mA
Vth (V) Gate threshold voltage
150
1
-2.5
Drain-Source on resistance RDS (ON) ()
0.8
VGS = -4.0 V
-2
0.6 -10 V 0.4
-1.5
-1
0.2
-0.5
0 -25
0
25
50
75
100
125
0 -25
0
25
50
75
100
125
150
Ambient temperature Ta (C)
Ambient temperature Ta (C)
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SSM3J112TU
|Yfs| - ID
3 500 300 1 0.3 0.1
C - VDS
Forward transfer admittance Yfs (S)
(pF)
100 50 30
Ciss
Capacitance C
Coss 10 5 Common Source 3 Ta = 25C f = 1 MHz VGS = 0 V 1 -0.1 Crss
0.01 Common Source 0.03 0.001 -1 VDS = -5 V Ta = 25C -10 -100 -1000 -10000
-1
-10
-100
Drain current ID (mA)
Drain-Source voltage
VDS
(V)
Dynamic input characteristic
-10 300 Common Source ID = -1 A Ta = 25C
t - ID
Common Source VDD = -15 V VGS = 0 -4 V Ta = 25C RG = 10 toff 30 tf
VGS (V)
-12 V -6 VDD = -24 V -4
Gate-Source voltage
Switching time t (ns)
-8
100
10
ton tr
-2
0 0
1
2
3
3 -0.01
-0.03
-0.1
-0.3
-1
-3
Total gate charge Qg (nC)
Drain current ID (A)
IDR - VDS
-2 Common Source VGS = 0 -1.6 Ta = 25C
1000 Drain power dissipation PD(mW) 800 600
a b
PD - Ta
a: mounted on FR4 board (25.4mmx25.4mmx1.6mm) Cu Pad :25.4mmx25.4mm b:mounted on ceramic board (25.4mmx25.4mmx0.8mm) Cu Pad :25.4mmx25.4mm
Drain reverse current IDR (A)
D IDR S
G
-1.2
-0.8
400 200 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta(C)
-0.4
0 0
0.2
0.4
0.6
0.8
1
Drain-Source voltage
VDS (V)
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SSM3J112TU
Rth - tw 1000
Transient thermal impedance Rth(C/W)
c b a
Single pulse a:Mounted on ceramic board (25.4mmx25.4mmx0.8mm) Cu Pad :25.4mmx25.4mm b:Mounted on FR4 board (25.4mmx25.4mmx1.6mm) Cu Pad :25.4mmx25.4mm c:Mounted on FR4 Board (25.4mmx25.4mmx1.6mm) Cu Pad :0.45mmx0.8mmx3
100
10
1 0.001
0.01
0.1 1 10 Pulse w idth tw (S)
100
1000
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SSM3J112TU
RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
20070701-EN GENERAL
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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