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| PHOTODIODE Si PIN photodiode S4707-01 Si PIN photodiode for general photometry Features Applications l Clear plastic package: 4.5 x 5.5 mm l 4-pin DIP type l Active area: 2.4 x 2.8 mm l Optical switch, etc. s Absolute maximum ratings (Ta=25 C) Parameter Reverse voltage Operating temperature Storage temperature Symbol VR Max. Topr Tstg Value 20 -25 to +85 -40 to +100 Unit V C C s Electrical and optical characteristics (Ta=25 C) Parameter Spectral response range Peak sensitivity wavelength Photo sensitivity Short circuit current Dark current Cut-off frequency Terminal capacitance Symbol p S Isc ID fc Ct Condition Min. 0.5 Typ. 320 to 1100 960 0.6 6.6 0.08 20 14 Max. 5 30 Unit nm nm A/W A nA MHz pF =p 100 lx, 2856 K VR=10 V VR=10 V, RL=50 -3 dB, =780 nm VR=10 V, f=1 MHz 1 Si PIN photodiode s Spectral response 0.7 0.6 QE=100 % (Typ. Ta=25 C) S4707-01 s Dark current vs. reverse voltage 1 nA (Typ. Ta=25 C) PHOTO SENSITIVITY (A/W) 0.4 0.3 0.2 0.1 0 200 DARK CURRENT 0.5 100 pA 400 600 800 1000 1200 10 pA 0.01 0.1 1 10 100 WAVELENGTH (nm) KPINB0299EA REVERSE VOLTAGE (V) KPINB0300EA s Terminal capacitance vs. reverse voltage 1 nF (Typ. Ta=25 C) s Dimensional outline (unit: mm) 4.6 0.2 (INCLUDING BURR) 5.6 0.2 (INCLUDING BURR) (4 x) 0.7 (4 x) 0.5 2.54 TERMINAL CAPACITANCE 100 pF 5.4 * (2 x) 10 4.5 * 10 pF 0.7 1.0 2.0 5.75 0.2 (2 x) 5 PHOTOSENSITIVE SURFACE 1 pF 0.1 (4 x) 4.5 0.4 1 10 100 REVERSE VOLTAGE (V) KPINB0301EA (2 x) 3 (4 x) 0.2 5 NC CATHODE ANODE CATHODE Tolerance unless otherwise noted: 0.1, 2 Shaded area indicates burr. Chip position accuracy with respect to the package dimensions marked * X, Y0.2, 2 KPINA0099EA (4 x) 7.5 5 Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. (c)2004 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, http://www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvagen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Cat. No. KPIN1070E01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 May 2004 DN 2 (2 x) 3 5.5 * |
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