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  Datasheet File OCR Text:
 US1A ... US1M
US1A ... US1M
Ultrafast Switching Surface Mount Si-Diodes Ultraschnelle Si-Dioden fur die Oberflachenmontage Version 2006-04-18 Nominal current - Nennstrom
5 0.2
0.2 0.1
1A 50...1000 V ~ SMA ~ DO-214AC 0.07 g
Repetitive peak reverse voltage Periodische Spitzensperrspannung Plastic case Kunststoffgehause Weight approx. - Gewicht ca. Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle
2.2
1 2.7+ 0.1
0.15
Type Typ
4.6 0.2
Dimensions - Mae [mm]
Maximum ratings Type Typ US1A US1B US1D US1G US1J US1K US1M Repetitive peak reverse voltage Periodische Spitzensperrspannung VRRM [V] 50 100 200 400 600 800 1000 TT = 100C f > 15 Hz TA = 25C TA = 25C IFAV IFRM IFSM i2t
1.5
2.1
Grenzwerte Surge peak reverse voltage Stospitzensperrspannung VRSM [V] 50 100 200 400 600 800 1000 1A 6 A 1) 30 A 4.5 A2s -50...+150C -50...+150C
Max. average forward rectified current, R-load Dauergrenzstrom in Einwegschaltung mit R-Last Repetitive peak forward current Periodischer Spitzenstrom Peak forward surge current, 50 Hz half sine-wave Stostrom fur eine 50 Hz Sinus-Halbwelle Rating for fusing, t < 10 ms Grenzlastintegral, t < 10 ms Junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur
TS
Tj
1
Max. temperature of the terminals TT = 100C - Max. Temperatur der Anschlusse TT = 100C http://www.diotec.com/
(c) Diotec Semiconductor AG
1
US1A ... US1M Characteristics Type Typ US1A...US1D US1G US1J...US1M Leakage current Sperrstrom Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft Thermal resistance junction to terminal Warmewiderstand Sperrschicht - Anschluss Reverse recovery time Sperrverzugszeit trr [ns] 1) < 50 < 50 < 75 Kennwerte Forward voltage Durchlass-Spannung VF [V] at / bei IF [A] < 1.0 < 1.25 < 1.7 Tj = 25C VR = VRRM Tj = 100C VR = VRRM IR IR RthA RthT 1 1 1 < 10 A < 100 A < 70 K/W 2) < 30 K/W
120 [%] 100
10 [A] 1
US1A...D
80
US1G US1J...M
60
0.1
40 10-2 20 IFAV 0 0 TT 50 100 150 [C] IF 10-3
Tj = 25C
VF
Forward characteristics (typical values) Durchlasskennlinien (typische Werte)
[V]
Rated forward current vs. temp. of the terminals Zul. Richtstrom in Abh. v. d. Temp. der Terminals
1 2
IF = 0.5 A through/uber IR = 1 A to/auf IR = 0.25 A Mounted on P.C. board with 25 mm2 copper pads at each terminal Montage auf Leiterplatte mit 25 mm2 Kupferbelag (Lotpad) an jedem Anschluss http://www.diotec.com/ (c) Diotec Semiconductor AG
2


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