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| KSC5803D KSC5803D High Voltage Color Display Horizontal Deflection Output (Damper Diode Built In) * * * * High Breakdown Voltage : BVCBO=1500V High Speed Switching : tF=0.1s (Typ.) Wide S.O.A For C-Monitor(85KHz) 1 TO-3PF 2.Collector 3.Emitter 1.Base Equivalent Circuit C B NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Dissipation (TC=25C) Junction Temperature Storage Temperature Value 1500 800 6 12 24 70 150 50 typ. E Units V V V A A W C C - 55 ~ 150 Electrical Characteristics TC=25C unless otherwise noted Symbol ICES ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) tSTG tF VF Parameter Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Storage Time Fall Time Damper Diode Turn On Voltage Test Condition VCE = 1400V, VBE=0 VCB= 800V, IE = 0 VEB = 4V, IC = 0 VCE = 5V, IC = 1A VCE = 5V, IC = 8A IC = 8A, IB = 2A IC = 8A, IB = 2A VCC = 200V, IC = 7A IB1 = 1.4A, IB2 = - 2.8A RL = 28.6 IF = 8A 50 15 7 Min. Typ. Max. 1 10 250 40 10 3 1.5 4 0.3 2 V V s s V Units mA A mA Thermal Characteristics TC=25C unless otherwise noted Symbol RjC Item Thermal Resistance, Junction to Case Max 1.79 Unit C/W (c)2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 KSC5803D Typical Characteristics 10 100 VCE=5V IC[A], COLLECTOR CURRENT 8 6 hFE, DC CURRENT GAIN IB = 1A 0.9A 0.8A 0.7A 0.6A 0.5A 0.4A 0.3A 0.2A IB = 0.1A 10 4 2 IB = 0 0 0 2 4 6 8 10 1 0.1 1 10 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain 10 12 VCE(sat)[mV], SATURATION VOLTAGE VCE=5V 1 IC[A], COLLECTOR CURRENT 10 8 IC = 5IB IC = 3IB 0.1 6 4 2 0.01 0.1 1 10 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 IC[A], COLLECTOR CURRENT VBE[V], BASE EMITTER VOLTAGE Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage 10 100 tSTG[s], STORAGE TIME tF[s], FALL TIME tSTG IC[A], COLLECTOR CURRENT s s 0 10 10 10 DC 10 0m s s 1m 1 1 s m 10 tF 0.1 0.1 RESISTIVE LOAD VCC = 200V IC = 7A IB1 = 1.4A 1 10 SINGLE PULSE TC = 25 0.01 1 10 100 1000 2000 0.1 - IB2[A], BASE CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 5. Switching Time Figure 6. Safe Operating Area (c)2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 KSC5803D Typical Characteristics (Continued) 80 70 PC[W], POWER DISSIPATION 60 50 40 30 20 10 0 0 25 50 75 100 125 150 175 TC[], CASE TEMPERATURE Figure 7. Power Derating (c)2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 KSC5803D Package Demensions TO-3PF 5.50 0.20 4.50 0.20 15.50 0.20 o3.60 0.20 3.00 0.20 (1.50) 10.00 0.20 10 26.50 0.20 23.00 0.20 16.50 0.20 14.50 0.20 0.85 0.03 16.50 0.20 2.00 0.20 14.80 0.20 2.00 0.20 2.00 0.20 4.00 0.20 0.75 -0.10 +0.20 2.00 0.20 2.50 0.20 2.00 0.20 3.30 0.20 5.45TYP [5.45 0.30] 5.45TYP [5.45 0.30] 0.90 -0.10 +0.20 3.30 0.20 2.00 0.20 5.50 0.20 1.50 0.20 Dimensions in Millimeters (c)2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 22.00 0.20 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. STAR*POWERTM FAST(R) OPTOPLANARTM ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MICROWIRETM OPTOLOGICTM PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SLIENT SWITCHER(R) SMART STARTTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TruTranslationTM TinyLogicTM UHCTM UltraFET(R) VCXTM STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life support 1. Life support devices or systems are devices or systems device or system whose failure to perform can be which, (a) are intended for surgical implant into the body, reasonably expected to cause the failure of the life support or (b) support or sustain life, or (c) whose failure to perform device or system, or to affect its safety or effectiveness. when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production (c)2001 Fairchild Semiconductor Corporation Rev. H3 |
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