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| FDMS8680 N-Channel PowerTrench(R) MOSFET July 2007 FDMS8680 N-Channel PowerTrench(R) MOSFET 30V, 35A, 7.0m Features Max rDS(on) = 7.0m at VGS = 10V, ID = 14A Max rDS(on) = 11.0m at VGS = 4.5V, ID = 11.5A Advanced Package and Silicon combination for low rDS(on) and high efficiency MSL1 robust package design RoHS Compliant General Description The FDMS8680 has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. Applications High Side for Synchronous Buck to Power Core Processor Secondary Side Synchronous Rectifier High Side Switch in POL DC/DC Converter Oring FET/ Load Switch Pin 1 S S D S G D D D D D Power 56 (Bottom view) D 5 6 7 8 4 3 2 1 G S S S D MOSFET Maximum Ratings TA = 25C unless otherwise noted Symbol VDS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) ID -Continuous (Silicon limited) -Continuous -Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy Power Dissipation Power Dissipation TC = 25C TA = 25C (Note 1a) (Note 3) TC = 25C TC = 25C TA = 25C (Note 1a) Ratings 30 20 35 63 14 100 216 50 2.5 -55 to +150 mJ W C A Units V V Operating and Storage Junction Temperature Range Thermal Characteristics RJC RJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 2.5 50 C/W Package Marking and Ordering Information Device Marking FDMS8680 Device FDMS8680 Package Power 56 Reel Size 13" Tape Width 12mm Quantity 3000units (c)2007 Fairchild Semiconductor Corporation FDMS8680 Rev.C 1 www.fairchildsemi.com FDMS8680 N-Channel PowerTrench(R) MOSFET Electrical Characteristics TJ = 25C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250A, VGS = 0V ID = 250A, referenced to 25C VDS = 24V, VGS = 0V VGS = 20V, VDS = 0V 30 24 1 100 V mV/C A nA On Characteristics VGS(th) VGS(th) TJ rDS(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250A ID = 250A, referenced to 25C VGS = 10V, ID = 14A VGS = 4.5V, ID = 11.5A VGS = 10V, ID = 14A, TJ = 125C VDD = 10V, ID = 14A 1.0 1.8 -5.7 5.5 8.5 8.2 72 7.0 11.0 10.5 S m 3.0 V mV/C Dynamic Characteristics Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 15V, VGS = 0V, f = 1MHz f = 1MHz 1195 555 95 0.8 1590 740 145 4.0 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Total Gate Charge Gate to Source Charge Gate to Drain "Miller" Charge VGS = 0V to 10V VGS = 0V to 5V VDD = 15V, ID = 14A VDD = 15V, ID = 14A, VGS = 10V, RGEN = 6 9 3 21 2 18 10 3.2 2.7 18 10 34 10 26 14 ns ns ns ns nC nC nC nC Drain-Source Diode Characteristics VSD trr Qrr Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 14A (Note 2) 0.8 27 15 1.2 44 27 V ns nC IF = 14A, di/dt = 100A/s NOTES: 1. RJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RJC is guaranteed by design while RCA is determined by the user's board design. a. 50C/W when mounted on a 1in2 pad of 2 oz copper. b. 125C/W when mounted on a minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300s, Duty cycle < 2.0%. 3. Starting TJ = 25C, L = 3mH, IAS = 12A, VDD = 30V, VGS = 10V. (c)2007 Fairchild Semiconductor Corporation FDMS8680 Rev.C 2 www.fairchildsemi.com FDMS8680 N-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted 100 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 4.0 VGS = 4V VGS = 10V VGS = 4.5V 3.5 3.0 VGS = 3V PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX 80 ID, DRAIN CURRENT (A) 60 40 20 PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX VGS = 3.5V VGS = 3V VGS = 3.5V 2.5 2.0 1.5 1.0 0.5 0 20 40 60 ID, DRAIN CURRENT(A) VGS = 10V VGS = 4V VGS = 4.5V 0 0 1 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V) 80 100 Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 24 ID = 14A SOURCE ON-RESISTANCE (m) PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX 1.8 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.6 1.4 1.2 1.0 0.8 0.6 -75 ID = 14A VGS = 10V 20 16 12 8 TJ = 25oC rDS(on), DRAIN TO TJ = 125oC -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 4 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On- Resistance vs Junction Temperature 100 IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX Figure 4. On-Resistance vs Gate to Source Voltage 100 VGS = 0V 80 ID, DRAIN CURRENT (A) VDD = 5V 10 1 0.1 0.01 TJ = 150oC TJ = 25oC 60 40 TJ = 150oC 20 TJ = 25oC TJ = -55oC TJ = -55oC 0 1 2 3 4 5 0.001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current (c)2007 Fairchild Semiconductor Corporation FDMS8680 Rev.C 3 www.fairchildsemi.com FDMS8680 N-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted 10 VGS, GATE TO SOURCE VOLTAGE(V) ID = 14A 2000 1000 VDD = 15V VDD = 20V Ciss 8 CAPACITANCE (pF) VDD = 10V 6 4 2 0 0 4 8 12 16 20 Qg, GATE CHARGE(nC) Coss 100 50 0.1 f = 1MHz VGS = 0V Crss 1 10 30 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 70 60 ID, DRAIN CURRENT (A) 20 IAS, AVALANCHE CURRENT(A) 10 50 40 30 20 10 Limited by Package VGS = 4.5V VGS = 10V TJ = 25oC TJ = 125oC RJC = 2.5 C/W o 1 0.01 0.1 1 10 100 300 0 25 50 75 100 o 125 150 tAV, TIME IN AVALANCHE(ms) TC, CASE TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability 200 100 100us ID, DRAIN CURRENT (A) Figure 10. Maximum Continuous Drain Current vs Case Temperature 2000 1000 P(PK), PEAK TRANSIENT POWER (W) VGS = 10V SINGLE PULSE RJA = 125oC/W TA = 25oC 10 1ms 10ms THIS AREA IS LIMITED BY rDS(on) 100 1 100ms 1s 10s DC 10 0.1 SINGLE PULSE TJ = MAX RATED RJA = 125oC/W TA = 25oC 0.01 0.01 0.1 1 10 100 1 0.5 -4 10 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 VDS, DRAIN to SOURCE VOLTAGE (V) t, PULSE WIDTH (s) Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation (c)2007 Fairchild Semiconductor Corporation FDMS8680 Rev.C 4 www.fairchildsemi.com FDMS8680 N-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted 2 1 NORMALIZED THERMAL IMPEDANCE, ZJA DUTY CYCLE-DESCENDING ORDER 0.1 0.01 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.001 SINGLE PULSE RJA = 125 C/W o t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA 0.0001 -4 10 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 t, RECTANGULAR PULSE DURATION (s) Figure 13. Transient Thermal Response Curve (c)2007 Fairchild Semiconductor Corporation FDMS8680 Rev.C 5 www.fairchildsemi.com FDMS8680 N-Channel PowerTrench(R) MOSFET TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx(R) Build it NowTM CorePLUSTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) (R) Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FPSTM FRFET(R) Global Power ResourceSM Green FPSTM Green FPSTM e-SeriesTM GTOTM i-LoTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R) (R) PDP-SPMTM Power220(R) Power247(R) POWEREDGE(R) Power-SPMTM PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM The Power Franchise(R) TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM SerDesTM UHC(R) UniFETTM VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I30 Preliminary First Production No Identification Needed Full Production Obsolete Not In Production (c)2007 Fairchild Semiconductor Corporation FDMS8680 Rev.C www.fairchildsemi.com |
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