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ESJA09-12 HIGH VOLTAGE DIODE ESJA09 is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. Lot No. (12kV/5mA) Outline Drawings : mm Cathode Mark o 2.5 o 0.5 Features High speed switching Low VF High surge resisitivity for CRT discharge High reliability design Ultra small pakage 27 min. 10 27 min. Cathode Mark Type Mark Applications Rectification for CRT display monitor high voltage power supply (FBT:Flyback Transformer) ESJA09-12 57 Maximum Ratings and Characteristics Absolute Maximum Ratings Items Symbols White Units h arc m VRRM 12 n Repetitive Peak Renerse Voltage kV o te gn. e5 IO Ta=25C,Resistive Load o Average Output Current mA s l desi ob w 10mS Sine-half e b wave e IFSM 0.5 Suege Current Apeak peak value led for n du nd Tj che 120 Junction Temperature C e s s omm i 100 Allowable Operation Case Temperature C uct tTcrec do o r N Tstg Storage Temperature s -40 to +120 C ip h T Condition ESJA09-12 0 20 7. Electrical Characteristics (Ta=25C Unless otherwise specified ) Items Maximum Forward Voltage Drop Maximum Reverse Current Symbols VF IR1 IR2 Maximum Reverse Recovery Time Junction Capacitance trr Cj Conditions at 25C,IF=10mA at 25C,VR=12kV at 100C,VR=12kV at 25C,IF=2mA,IR=4mA at 25C,VR=0V,f=1MHz ESJA09-12 42 2 5 0.05 1 Units V A A s pF ESJA09-12 Characteristics (12kV/5mA) Forward characteristic (VF-IF) Typical 30 10 Reverse characteristic (VR-IR) Typical Toil=100C Ta=25C 25 1 IF (mA) 15 0.1 10 5 0.01 20 25 30 35 40 45 50 55 60 4 6 8 10 12 VF (V) IR (A) 20 VR (kV) Avalanche characteristic (Vz-Iz) Ta=25C 100 10 Th 1 15 16 17 h arc Typical Typical nm IF/IR=2/4mA o 75% Recovery ete ign. l bso des o be new d ule d for d che men s t is ecom c du ot r ro N sp i 130 120 110 100 Reverse recovery time characteristic (Ta-trr) 0 20 7. trr (ns) 90 80 70 60 50 40 30 Iz (A) 18 19 20 21 22 23 24 25 50 60 70 80 90 100 110 120 130 Vz (kV) Ta (C) |
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