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| BCW29, BCW30 BCW29, BCW30 PNP Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren fur die Oberflachenmontage Power dissipation - Verlustleistung 2.9 0.1 0.4 3 1.30.1 1.1 PNP 250 mW SOT-23 (TO-236) 0.01 g Version 2006-07-28 Plastic case Kunststoffgehause Weight approx. - Gewicht ca. Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Type Code 1 1.9 2 Dimensions - Mae [mm] 1=B 2=E 3=C Maximum ratings (TA = 25C) Collector-Emitter-volt. - Kollektor-Emitter-Spannung Collector-Base-voltage - Kollektor-Basis-Spannung Emitter-Base-voltage - Emitter-Basis-Spannung Power dissipation - Verlustleistung Collector current - Kollektorstrom (dc) Peak Collector current - Kollektor-Spitzenstrom Peak Base current - Basis-Spitzenstrom Junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur B open E open C open - VCEO - VCBO - VEB0 Ptot - IC - ICM - IBM Tj TS 2.5 max Grenzwerte (TA = 25C) BCW29 32 V 32 V 5V 250 mW 1) 100 mA 200 mA 200 mA -55...+150C -55...+150C BCW30 Characteristics (Tj = 25C) Min. DC current gain - Kollektor-Basis-Stromverhaltnis - VCE = 5 V, - IC = 10 A - VCE = 5 V, - IC = 2 mA BCW29 BCW30 BCW29 BCW30 hFE hFE hFE hFE - VCEsat - VCEsat - - 120 215 - - Kennwerte (Tj = 25C) Typ. 90 150 - - 80 mV 150 mV Max. - - 260 500 300 mV - Collector-Emitter saturation voltage - Kollektor-Sattigungsspannung 2) - IC = 10 mA, - IB = 0.5 mA - IC = 50 mA, - IB = 2.5 mA 1 2 Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschluss Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% http://www.diotec.com/ (c) Diotec Semiconductor AG 1 BCW29, BCW30 Characteristics (Tj = 25C) Min. Base-Emitter saturation voltage - Basis-Sattigungsspannung 2) - IC = 10 mA, - IB = 0.5 mA - IC = 50 mA, - IB = 2.5 mA Base-Emitter-voltage - Basis-Emitter-Spannung 2) - IC = 2 mA, - VCE = 5 V Collector-Base cutoff current - Kollektor-Basis-Reststrom - VCB = 30 V, (E open) - VCE = 30 V, Tj = 100C, (E open) Emitter-Base cutoff current - VEB = 5 V, (C open) Gain-Bandwidth Product - Transitfrequenz - VCE = 5 V, - IC = 10 mA, f = 100 MHz Collector-Base Capacitance - Kollektor-Basis-Kapazitat - VCB = 10 V, IE =ie = 0, f = 1 MHz Noise figure - Rauschzahl - VCE = 5 V, - IC = 200 A, RG = 2 k f = 1 kHz, f = 200 Hz Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft Recommended complementary NPN transistors Empfohlene komplementare NPN-Transistoren Marking - Stempelung F RthA - - < 420 K/W 1) BCW31 ... BCW33 BCW29 = C1 BCW30 = C2 10 dB CCBO - 4.5 pF - fT 100 MHz - - - IEB0 - - 100 nA - ICB0 - ICB0 - - - - 100 nA 10 A - VBE 600 mV - 750 mV - VBEsat - VBEsat - - 720 mV 810 mV - - Kennwerte (Tj = 25C) Typ. Max. 2 1 Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschluss http://www.diotec.com/ (c) Diotec Semiconductor AG 2 |
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