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| AP85U03GMT RoHS-compliant Product Advanced Power Electronics Corp. Simple Drive Requirement SO-8 Compatible Low On-resistance G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 30V 5m 82A D D S Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The GEMPAK package is special for DC-DC converters application and the foot print is compatible with SO-8 with backside heat sink. S S S D D G GEMPAK Absolute Maximum Ratings Symbol VDS VGS ID@TC=25 ID@TA=25 ID@TA=100 IDM PD@TC=25 PD@TA=25 EAS TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Continuous Drain Current Pulsed Drain Current1 Total Power Dissipation Total Power Dissipation Single Pulse Avalanche Energy Storage Temperature Range Operating Junction Temperature Range 4 3 3 Rating 30 20 82 24 15 200 50 5 57.6 -55 to 150 -55 to 150 Units V V A A A A W W mJ Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient 3 Max. Max. Value 2.5 25 Units /W /W Data & specifications subject to change without notice 201008072-1/4 AP85U03GMT Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Test Conditions VGS=0V, ID=250uA VGS=10V, ID=20A VGS=4.5V, ID=20A Min. 30 1 - Typ. 19.5 29 6.4 19 10 84 27 83 395 390 1.2 Max. Units 5 10 3 1 100 46 1.8 V m m V S uA nA nC nC nC ns ns ns ns pF pF pF VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current VDS=VGS, ID=250uA VDS=10V, ID=20A VDS=24V, VGS=0V VGS=20V ID=30A VDS=24V VGS=4.5V VDS=15V ID=30A RG=3.3,VGS=10V RD=0.5 VGS=0V VDS=25V f=1.0MHz f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 2400 3840 Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 Test Conditions IS=30A, VGS=0V IS=10A, VGS=0V, dI/dt=100A/s Min. - Typ. 33 30 Max. Units 1.2 V ns nC trr Qrr Reverse Recovery Time2 Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec 4.Starting Tj=25oC , VDD=20V , L=0.1mH , RG=25. THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION. THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT DEVICE OR SYSTEM ARE NOT AUTHORIZED. 2/4 AP85U03GMT 200 100 T C =25 C 160 o 10V 7.0 V 80 T C =150 C o ID , Drain Current (A) 5.0V 120 ID , Drain Current (A) 10V 7 .0V 5.0V 4.5 V 60 4.5 V 80 40 V G =3.0V 40 20 V G = 3.0 V 0 0.0 2.0 4.0 6.0 8.0 0 0.0 2.0 4.0 6.0 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 14 2.0 I D =20A 12 T C =25 o C 1.6 I D =20A V G =10V 10 Normalized RDS(ON) RDS(ON) (m) 8 1.2 6 0.8 4 2 2 4 6 8 10 0.4 -50 0 50 100 150 V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 40 T j =150 o C 30 T j =25 o C 1.2 20 Normalized VGS(th) (V) 0 0.4 0.8 1.2 1.6 IS(A) 0.8 10 0.4 0 0.0 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3/4 AP85U03GMT 16 10000 f=1.0MHz I D =30A VGS , Gate to Source Voltage (V) 12 C (pF) V DS =16V V DS =20V V DS =24V 8 C iss 1000 C oss C rss 4 0 0 15 30 45 60 100 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS ,Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1000 1 Duty factor = 0.5 100 Normalized Thermal Response (Rthja) 0.2 100us ID (A) 10 0.1 1 T C =25 C Single Pulse o 1ms 10ms 100ms DC 0.1 0.05 PDM t 0.02 T Duty factor = t/T Peak Tj = PDM x R thjc + T c 0.01 Single Pulse 0 0.1 1 10 100 0.01 0.00001 0.0001 0.001 0.01 0.1 1 V DS ,Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG 4.5V QGS QGD 10% VGS td(on) tr td(off) tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 4/4 ADVANCED POWER ELECTRONICS CORP. Package Outline : GEM-PAK SYMBOLS Millimeters MIN NOM MAX A b C C1 D1 D2 E E1 E2 e 1.All Dimension Are In Millimeters. 2.Dimension Does Not Include Mold Protrusions. 0.90 0.33 0.20 3.48 4.80 3.61 5.90 5.70 3.63 0.41 1.10 0.51 0.06 0 1.00 0.41 0.25 3.58 4.90 3.81 6.00 5.75 3.83 1.27 BSC 0.51 0.61 0.13 - 1.10 0.51 0.30 3.68 5.00 3.96 6.10 5.80 4.03 0.61 0.71 0.20 12 H K1 L L1 Part Marking Information & Packing : GEM-PAK Part Number Package Code(GMT) 85U03GMT YWWSSS Date Code (YWWSSS) YLast Digit Of The Year WWWeek SSSSequence |
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