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| TLP371,TLP372 TOSHIBA Photocoupler GaAs Ired & Photo-Transistor TLP371, TLP372 Office Machine Household Use Equipment Telecommunication Solid State Relay Programmable Controllers The TOSHIBA TLP371 and TLP372 consists of a gallium arsenide infrared emitting diode optically coupled to a darlington connected photo-transistor which has an integrated base-emitter resistor to optimize switching speed and elevated temperature characteristics in a six lead plastic DIP package. TLP372 is no-base internal connection for high-EMI environments. Unit in mm * * * Current transfer ratio: 1000% (min) (IF = 1mA) Isolation voltage: 5000 Vrms (min) UL recognized: UL1577, file no. E67349 TOSHIBA Weight: 0.4g 11-7A8 Pin Configurations (top view) TLP371 1 2 3 1 : Anode 2 : Cathode 3 : NC 4 : Emitter 5 : Collector 6 : Base 6 5 4 1 2 3 1 : Anode 2 : Cathode 3 : NC 4 : Emitter 5 : Collector 6 : NC TLP372 6 5 4 1 2007-10-01 TLP371,TLP372 Absolute Maximum Ratings (Ta = 25C) Characteristic Forward current Forward current derating (Ta 39C) LED Peak forward current (100s pulse, 100pps) Reverse voltage Junction temperature Collector-emitter voltage Collector-base voltage (TLP371) Emitter-collector voltage Detector Emitter-base voltage (TLP371) Collector current Power dissipation Power dissipation derating (Ta 25C) Junction temperature Storage temperature range Operating temperature range Lead soldering temperature (10 s) Total package power dissipation Total package power dissipation derating (Ta 25C) Isolation voltage (AC, 1min., R.H. 60%) (Note 1) Symbol IF IF / C IFP VR Tj VCEO VCBO VECO VEBO IC PC PC / C Tj Tstg Topr Tsold PT PT / C BVS Rating 60 -0.7 1 5 125 300 300 0.3 7 150 300 -3.0 125 -55~125 -55~100 260 350 -3.5 5000 Unit mA mA / C A V C V V V V mA mW mW / C C C C C mW mW / C Vrms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Device considered a two terminal device: Pins 1, 2 and 3 shorted together and pins 4,5 and 6 shorted together. Recommended Operating Conditions Characteristic Supply voltage Forward current Collector current Operating temperature Symbol VCC IF IC Topr Min -25 Typ. 16 Max 200 25 120 85 Unit V mA mA C Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. 2 2007-10-01 TLP371,TLP372 Individual Electrical Characteristics (Ta = 25C) Characteristic Forward voltage LED Reverse current Capacitance Collector-emitter breakdown voltage Emitter-collector breakdown voltage Collector-base breakdown voltage (TLP371) Emitter-base breakdown voltage (TLP371) Detector Collector dark current Symbol VF IR CT V(BR) CEO V(BR) ECO V(BR) CBO V(BR) EBO Test Condition IF = 10 mA VR = 5 V V = 0, f = 1 MHz IC = 0.1 mA IE = 0.1 mA IC = 0.1 mA IE = 0.1 mA VCE = 200 V ICEO VCE = 200 V Ta = 85 C VCE = 200 V Ta = 85 C, RBE = 10 M VCE = 200 V VCE = 5 V, IC = 10 mA V = 0, f = 1 MHz Min 1.0 300 0.3 300 7 Typ. 1.15 30 10 Max 1.3 10 200 20 Unit V A pF V V V V nA A Collector dark current (TLP371) Collector dark current (TLP371) DC forward current gain (TLP371) Capacitance (collecter to emitter) ICER ICBO hFE CCE 0.5 0.1 7000 10 10 A nA pF Coupled Electrical Characteristics (Ta = 25C) Characteristic Current transfer ratio Saturated CTR Base photo-current (TLP371) Collector-emitter saturation voltage Symbol IC / IF IC / IF (sat) IPB VCE (sat) Test Condition IF = 1 mA, VCE = 1 V IF = 10 mA, VCE = 1 V IF = 1 mA, VCB = 1 V IC = 10 mA, IF = 1 mA IC = 100 mA, IF = 10 mA MIn 1000 500 0.3 Typ. 4000 6 Max 1.0 1.2 Unit % % A V 3 2007-10-01 TLP371,TLP372 Isolation Characteristics (Ta = 25C) Characteristic Capacitance (input to output) Isolation resistance Symbol CS RS Test Condition VS = 0, f = 1 MHz VS = 500 V AC, 1 minute Isolation voltage BVS AC, 1 second, in oil DC, 1 minute, in oil Min 5x10 10 Typ. 0.8 10 14 Max Unit pF Vrms Vdc 5000 10000 10000 Switching Characteristics (Ta = 25C) Characteristic Rise time Fall time Turn-on time Turn-off time Turn-on time Storage time Turn-off time Turn-on time Storage time Turn-off time Symbol tr tf ton toff tON ts tOFF tON ts tOFF RL = 180 RBE = OPEN VCC = 5 V, IF = 16 mA RL = 180 RBE = 10 M(TLP371) VCC = 10 V, IF = 16 mA (Fig.1) VCC = 10 V IC = 10 mA RL = 100 Test Condition Min (Fig.1) Typ. 40 15 50 15 3 45 90 5 40 80 Max s s s Unit Fig.1: Switching time test circuit IF VCE tON IF RBE RL VCC VCE ts VCC 9V 1V tOFF 4 2007-10-01 TLP371,TLP372 100 IF - Ta Allowable collector power dissipation PC (mW) 400 PC - Ta Allowable forward current IF (mA) 80 320 60 240 40 160 20 80 0 -20 0 20 40 60 80 100 120 0 -20 0 20 40 60 80 100 120 Ambient temperature Ta () Ambient temperature Ta () 5000 3000 IFP - DR IF (mA) Pulse width 100s Ta = 25C 100 50 30 IF - VF Ta = 25C Pulse forward current IFP (mA) 1000 500 300 10 5 3 100 50 30 10 3 Forward current 1 0.5 0.3 10 -3 3 10 -2 3 10 -1 3 10 0 Duty cycle ratio DR 0.1 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Forward voltage VF (V) -3.2 -2.8 -2.4 -2.0 -1.6 -1.2 -0.8 -0.4 0.1 VF / Ta - IF 1000 IFP - VFP Pulse forward current IFP (mA) 500 300 Forward voltage temperature coefficient VF / Ta (mV / ) 100 50 30 10 5 3 1 0.6 Pulse width 10s Repetitive frequency =100Hz Ta = 25C 0.3 0.5 1 3 10 30 50 1.0 1.4 1.8 2.2 2.6 3.0 Forward current IF (mA) Pulse forward voltage VFP (V) 5 2007-10-01 TLP371,TLP372 IC - VCE 140 120 10mA 4mA Ta = 25C 300 I C - IF VCE = 1.2V 1V Collector current IC (mA) 2mA Collector current IC (mA) 100 50 30 100 80 1mA 60 40 20 0 IF = 0.5mA 10 5 3 Ta = 25C 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 1 0.2 0.5 1 3 10 30 50 Collector-emitter voltage VCE (V) Forward current IF (mA) Switching Time - RL 1000 500 300 t I C / IF - I F 50000 30000 Ta = 25C VCC = 10V Ta = 25C Current transfer ration IC / IF (%) OFF (IF = 16mA) 10000 (s) 100 50 30 t OFF (IF = 1.6mA) 5000 3000 VCE = 1.2V Switching time t 10 5 3 t ON (IF = 1.6mA) 1000 1V 500 300 ON (IF = 16mA) 100 0.3 1 30 50 100 300 500 1K 3K 5K 10K 0.5 1 3 5 10 30 50 Load resistance RL () Forward current IF (mA) 6 2007-10-01 TLP371,TLP372 10 1 ICEO - VCE Ta = 25C 10 1 ICEO - Ta Collector dark current ICEO (A) Collector dark current ICEO (A) RBE = OPEN 10 0 10 0 10 -1 RBE = 10 M TLP371 VCE = 200V -2 10 10 -1 150V 80V 10 10 30 50 100 300 500 -3 0 20 40 60 80 100 Collector-emitter voltage VCE (V) Ambient temperature Ta () IC - Ta 120 VCE = 1V IF = 10mA 1.4 IC - Ta VCE = 1V Collector current IC (mA) 100 1.2 80 Collector current IC IF = 10mA 1.0 1mA 0.8 60 40 1mA 0.6 20 0.4 0 -20 0.2 0 20 40 60 80 100 -20 0 20 40 60 80 100 Ambient temperature Ta () Ambient temperature Ta () 7 2007-10-01 TLP371,TLP372 RESTRICTIONS ON PRODUCT USE * The information contained herein is subject to change without notice. 20070701-EN * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 8 2007-10-01 |
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