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APT8014JFLL
800V 42A 0.160
POWER MOS 7
(R)
R
FREDFET
G
S D
S
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching (R) losses are addressed with Power MOS 7 by significantly lowering RDS(ON) (R) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with Microsemi's patented metal gate structure. * Lower Input Capacitance * Lower Miller Capacitance * Lower Gate Charge, Qg
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current
1
SO
2 T-
27
"UL Recongnized"
file # 145592
ISOTOP fi
* Increased Power Dissipation * Easier To Drive * Popular SOT-227 Package * FAST RECOVERY BODY DIODE
D G S
All Ratings: TC = 25C unless otherwise specified.
APT8014JFLL UNIT Volts Amps
800 42 168 30 40 595 4.76 -55 to 150 300 42 50
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/C C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
3200
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) Drain-Source On-State Resistance
2
MIN
TYP
MAX
UNIT Volts
800 0.160 250 1000 100 3 5
(VGS = 10V, 21A)
Ohms A nA Volts
5-2006 050-7106 Rev B
Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 640V, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 5mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss C rss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Symbol IS ISM VSD
dv/ dt
APT8014JFLL
Test Conditions
VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 400V ID = 52A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 400V ID = 52A @ 25C 6 INDUCTIVE SWITCHING @ 25C VDD = 533V, VGS = 15V INDUCTIVE SWITCHING @ 125C VDD = 533V VGS = 15V ID = 52A, RG = 3 ID = 52A, RG = 3 RG = 0.6
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
MIN
TYP
MAX
UNIT pF
7238 1402 248 285 30 170 20 19 69 15 1091 1135 1662 1383
MIN TYP MAX
Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery
1 2 dt 6
nC
ns
J
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
UNIT Amps Volts V/ns ns C Amps
42 168 1.3 18
Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C MIN
(Body Diode) (VGS = 0V, IS = -52A)
5
dv/
t rr Q rr IRRM
Reverse Recovery Time (IS = -52A, di/dt = 100A/s) Reverse Recovery Charge (IS = -52A, di/dt = 100A/s) Peak Recovery Current (IS = -52A, di/dt = 100A/s) Characteristic Junction to Case Junction to Ambient
440 1100 2.0 13 15 30
TYP MAX
THERMAL CHARACTERISTICS
Symbol RJC RJA UNIT C/W
0.21 40
1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471
0.25
, THERMAL IMPEDANCE (C/W)
4 Starting Tj = +25C, L = 3.63mH, RG = 25, Peak IL = 42A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -ID42A di/dt 700A/s VR 800 TJ 150C 6 Eon includes diode reverse recovery. See figures 18, 20.
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
0.20
0.9
0.15
0.7 Note:
PDM t1 t2 Peak TJ = PDM x ZJC + TC Duty Factor D = t1/t2
5-2006
0.10
0.5 0.3
JC
050-7106 Rev B
0.05 0.1 0.05 10-5 10-4 SINGLE PULSE
Z
0
10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10
Typical Performance Curves
ID, DRAIN CURRENT (AMPERES)
140 120 100 80 60 40 20 0 VGS =15 & 10V 8V 7V 6.5V 6V
APT8014JFLL
TJ ( C)
0.0492 Dissipated Power (Watts) 0.0273 0.469 44.21 0.142
TC ( C)
0.0189
ZEXT
5.5V 5V
ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction.
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
VDS> ID (ON) x RDS (ON)MAX. 250 SEC. PULSE TEST @ <0.5 % DUTY CYCLE
0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
140
ID, DRAIN CURRENT (AMPERES)
1.40 1.30 1.20
120 100 80 60 40 20 0
NORMALIZED TO V = 10V @ 26A
GS
TJ = -55C
VGS=10V 1.10 1.00 0.90 0.80 VGS=20V
TJ = +25C
TJ = +125C 0 1 2 3 4 5 6 7 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS
0
45 40
ID, DRAIN CURRENT (AMPERES) BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED)
1.15
20 40 60 80 100 120 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT
35 30 25 20 15 10 5 0 25
1.10
1.05
1.00
0.95
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED)
50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 2.5
I V
D
0.90
-50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50
= 26A = 10V
2.0
1.5
1.0
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
GS
0.5
0.0 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
-25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-7106 Rev B
5-2006
168 100
ID, DRAIN CURRENT (AMPERES)
OPERATION HERE LIMITED BY RDS (ON)
20,000 10,000
C, CAPACITANCE (pF)
APT8014JFLL
Ciss
50
100S
10 5 TC =+25C TJ =+150C SINGLE PULSE 1mS 10mS
1,000
Coss
Crss 0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE 200 100 TJ =+150C TJ =+25C 10 100
1
1 10 100 800 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA
I
D
= 52A
12
VDS= 160V VDS= 400V
8
VDS= 640V
4
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
16
100 150 200 250 300 350 400 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 160 140 120 td(off)
0 0
50
0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 140 120 100
V
DD G
1
= 533V
R
= 3
T = 125C
J
L = 100H
td(on) and td(off) (ns)
R
G
= 3
tr and tf (ns)
100 80 60 40 20 0 10
V
DD
= 533V
tf
T = 125C
J
80 60 40 20 tr
L = 100H
td(on) 20 30
40 50 60 70 80 ID (A) FIGURE 14, DELAY TIMES vs CURRENT
DD G
40 50 60 70 80 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT 12000 10000
SWITCHING ENERGY (J)
V I
DD
0 10
20
30
3000 2500
SWITCHING ENERGY (J)
V
= 533V
= 533V
R
= 3
D J
= 52A
T = 125C
J
T = 125C L = 100H EON includes diode reverse recovery.
Eoff
L = 100H
2000 1500
E ON includes diode reverse recovery.
8000 6000 4000 2000 0
Eon 1000 500 0 10 Eoff
050-7106 Rev B
5-2006
Eon
40 50 60 70 80 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT
20
30
10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
0
5
Typical Performance Curves
APT8014JFLL
10 % TJ = 125 C
90% t
Gate Voltage
T = 125 C J
td(on) 90% tr 5%
Switching Energy
d(off) Drain Voltage
90% t f 10%
Switching Energy Drain Current
5%
10 %
0
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT30DF60
V DD
IC
V CE
G D.U.T.
Figure 20, Inductive Switching Test Circuit
SOT-227 (ISOTOP(R)) Package Outline
31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504)
* Source
Drain
* Source terminals are shorted internally. Current handling capability is equal for either Source terminal.
* Source Dimensions in Millimeters and (Inches)
Gate
ISOTOP(R) is a registered trademark of ST Microelectronics NV. Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-7106 Rev B
5-2006
3.3 (.129) 3.6 (.143)
1.95 (.077) 2.14 (.084)

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