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| 2SK4017 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS III) 2SK4017 Chopper Regulator, DC/DC Converter and Motor Drive Applications Unit: mm MAX Low drain-source ON-resistance High forward transfer admittance Low leakage current Enhancement mode : RDS (ON) = 0.07 (typ.) : |Yfs| = 6.0 S (typ.) 4 V gate drive : IDSS = 100 A (max) (VDS = 60 V) : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA) MAX Absolute Maximum Ratings (Ta = 25C) MAX Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 60 60 20 5 20 20 40.5 5 2 150 -55~150 Unit V V V A A W mJ A mJ C C 1 MAX JEDEC JEITA TOSHIBA 2-7B2B Pulse (Note 1) Drain power dissipation (Tc = 25C) Single-pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range Weight: 0.36 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristic Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 6.25 125 Unit C / W C / W Note 1: Ensure that the channel temperature does not exceed 150C. Note 2: VDD = 25 V, Tch = 25C (initial), L = 2.2 mH, RG = 25 , IAR = 5 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. 1 2006-11-20 2SK4017 Electrical Characteristics (Ta = 25C) Characteristic Gate leakage current Drain cutoff current Drain-source breakdown voltage Gate threshold voltage Drain-source ON-resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS IDSS V (BR) DSS Vth RDS (ON) |Yfs| Ciss Crss Coss tr ton tf toff Qg Qgs Qgd VDD 48 V, VGS = 10 V, ID = 5 A VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 16 V, VDS = 0 V VDS = 60 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 4 V, ID = 2.5 A VGS = 10 V, ID = 2.5 A VDS = 10 V, ID = 2.5 A Min -- -- 60 1.3 -- -- 3.0 -- -- -- -- Typ. -- -- -- -- 0.09 0.07 6.0 730 60 95 10 Max 10 100 -- 2.5 0.15 0.10 -- -- -- -- -- pF Unit A A V V S Turn-on time Switching time Fall time -- 20 -- ns -- 4 -- Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain ("Miller") charge -- -- -- -- 35 15 11 4 -- -- -- -- nC Source-Drain Ratings and Characteristics (Ta = 25C) Characteristic Continuous drain reverse current (Note 1) Pulse drain reverse current (Note 1) Forward voltage (diode) Reverse recovery time Reverse recovery charge Symbol IDR IDRP VDSF trr Qrr IDR = 5 A, VGS = 0 V IDR = 5 A, VGS = 0 V, dIDR / dt = 50 A / s Test Condition -- -- Min -- -- -- -- -- Typ. -- -- -- 34 28 Max 5 20 -1.7 -- -- Unit A A V ns C Marking K4017 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-20 2SK4017 ID - VDS 5 10 4 4 3.3 8 10 10 4 6 8 ID - VDS Common source Tc = 25C Pulse test (A) ID 3 3 2 VGS = 2.8V 1 Common source Tc = 25C Pulse test 0 0.4 0.8 1.2 1.6 2.0 ID (A) 8 6 6 3.3 4 3 2 VGS = 2.8V Drain current 0 Drain current 0 0 2 4 6 8 10 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID - VGS 10 Common source VDS = 10 V Pulse test 2.0 VDS - VGS Common source Tc = 25 Pulse test 8 (V) VDS Drain-source voltage 100 Ta = -55C 25 1.6 ID (A) 6 12 Drain current 4 0.8 ID = 5A 2.5 1.2 0 0 2 0.4 0 0 1 2 3 4 5 4 8 12 16 20 Gate-source voltage VGS (V) Gate-source voltage VGS (V) |Yfs| - ID 100 0.5 Common source VDS = 10 V Pulse test Common source Ta = 25C Pulse test RDS (ON) - ID 0.4 Forward transfer admittance Yfs (S) 10 Tc = -55C 25 100 Drain-source ON-resistance RDS (ON) () 0.3 0.2 VGS = 4V 0.1 10 1 0.1 0.1 1 10 100 0 0 2 4 6 8 10 Drain current ID (A) Drain current ID (A) 3 2006-11-20 2SK4017 RDS (ON) - Ta 0.2 Common source Pulse test 10 IDR - VDS Drain reverse current IDR (A) Drain-source ON-resistance RDS (ON) () 10 5 3 1 1 VGS = 0 V 0.15 ID = 5A 2.5 0.1 VGS = 4 V 5 1.2 2.5 1.2 0.05 VGS = 10 V Common source Tc = 25C Pulse test 0.1 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 0 -80 -40 0 40 80 120 160 Ambient temperature Ta (C) Drain-source voltage VDS (V) Capacitance - VDS 10000 Common source VGS = 0 V f = 1 MHz Tc = 25C 1000 2.2 2.6 Vth - Tc Common source VDS = 10 V ID = 1mA Pulse test (pF) Gate threshold voltage Vth (V) Ciss Capacitance C 1.8 Coss 100 1.4 Crss 10 0.1 1 -80 1 10 100 -40 0 40 80 120 160 Drain-source voltage VDS (V) Case temperature Tc (C) Dynamic input / output characteristics 50 VDS 40 VGS 30 12V 24V 20 Common source 10 VDD = 48V ID = 5 A Tc = 25C Pulse test 0 0 5 10 15 20 25 30 0 5 10 15 20 25 PD VDS Drain power dissipation Case temperature Tc (C) Drain-source voltage Total gate charge Qg (nC) 4 2006-11-20 Gate-source voltage VGS (V) (W) (V) 2SK4017 rth - tw Normalized transient thermal impedance rth (t)/Rth (ch-c) 10 1 Duty = 0.5 0.2 0.1 Single Pulse PDM 0.05 0.02 0.01 t T Duty = t/T Rth (ch-c) = 6.25C/W 100 1m 10 m 100 m 1 10 0.1 0.01 10 Pulse width tw (s) SAFE OPERATING AREA 100 50 EAS - Tch EAS (mJ) Avalanche energy ID max (pulse)* Drain current ID (A) 10 IDmax (continuous) 1 ms * 100 s * 40 DC OPERATION TC =25C 1 30 20 10 0.1 * Single pulse Tc = 25C Curves must be derated linearly with increase in temperature. 0 25 VDSS max 10 100 50 75 100 125 150 Channel temperature (initial) Tch (C) 0.01 0.1 1 Drain-source voltage VDS (V) 15 V 0V BVDSS IAR VDD VDS Waveform AS = 1 B VDSS L I2 B 2 VDSS - VDD Test circuit RG = 25 VDD = 25 V, L = 2.2 mH 5 2006-11-20 2SK4017 RESTRICTIONS ON PRODUCT USE * The information contained herein is subject to change without notice. 20070701-EN * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2006-11-20 |
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