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| Transys Electronics LIMITED SOT-23-3L Plastic-Encapsulated Transistors 2SB624 FEATURES Power dissipation PCM: 0.2 W (Tamb=25) TRANSISTOR (PNP) SOT-23-3L 1. BASE 2. EMITTER 3. COLLECTOR 1. 02 Collector current -0.7 A ICM: Collector-base voltage -30 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55 to +150 0. 0. 95 A 025 2. 80 A 05 0. 1. 60 A0. 05 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1)* DC current gain hFE(2)* Collector-emitter saturation voltage Base-emitter voltage Transition frequency VCE(sat) * VBE(on) * unless otherwise specified) Test conditions MIN -30 -25 -5 -0.1 -0.1 110 50 -0.6 -0.6 140 -0.7 V V MHz 400 TYP MAX UNIT V V V Ic=-100A, IE=0 Ic= -1 mA, IB=0 IE= -100 A, IC=0 VCB=-30 V , IE=0 VEB= -5V , IC=0 0. 35 2. 92 A0. 05 1. 9 A A VCE= -1V, IC= -100mA VCE=-1V, IC= -700mA IC=-700 mA, IB= -70mA VCE=-6V, IC=-10mA VCE= -6V, IC= -10mA fT * Pulse test : Pulse width 350s,Duty Cycle2%. CLASSIFICATION OF hFE(1) Marking Range BV1 110-180 BV2 135-220 BV3 170-270 BV4 200-320 BV5 250-400 |
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