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| Transys Electronics LIMITED SOT-23-3L Plastic-Encapsulated Transistors 2SA1464 FEATURES Power dissipation PCM : 0.2 W (Tamb=25) TRANSISTOR (PNP) SOT-23-3L 1. EMITTER 2. BASE 3. COLLECTOR 1. 02 0. 0. 95 A 025 2. 80 A 05 0. 1. 60 A0. 05 Collector current A ICM : -0.5 Collector-base voltage V V(BR)CBO : -60 Operating and storage junction temperature range TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Ouput Capacitance Turn-on Time Storage Time Turn-on Time Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) hFE(2) VCE(sat) VBE(on) unless otherwise specified) Test conditions MIN -60 -40 -5 -0.1 -0.1 75 20 140 50 -0.45 -1.0 150 400 5.0 8.0 35 225 255 -0.75 -1.3 V V MHz pF ns ns ns 300 TYP MAX UNIT V V V Ic=-100A, IE=0 Ic= -1mA, IB=0 IE= -100A, IC=0 VCB=- 40 V , IE=0 VEB= -4V , IC=0 0. 35 2. 92 A0. 05 1. 9 A A VCE=- 2V, IC= -150mA VCE=- 2V, IC= -500mA IC=-500 mA, IB= -50mA IC=-500mA, VCE=-50V VCE=-10V, IC= -20mA VCB=-10V, IE=-20mA VCC=-30V IC=150mA IB1=-IB2=15mA fT Cob ton tstg Toff CLASSIFICATION OF hFE(1) Marking Range Y12 75-150 Y13 100-200 Y14 150-300 |
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