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| ZXMHC6A07T8 COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET H-BRIDGE SUMMARY N-Channel V(BR)DSS = 60V; RDS(ON) = 0.300 ; ID= 1.8A P-Channel V(BR)DSS = -60V; RDS(ON) = 0.425 ; ID= -1.5A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES * Low On - Resistance * Fast switching speed * Low threshold * Low gate drive * SM8 package SM8 S1 G1 S4 G4 D1, D2 D3, D4 APPLICATIONS * Motor drive G2 S2 S3 G3 ORDERING INFORMATION PINOUT DIAGRAM DEVICE ZXMHC6A07T8TA ZXMHC6A07T8TC REEL SIZE 7'` 13'` TAPE WIDTH 12mm 12mm QUANTITY PER REEL 1000 units 4000 units DEVICE MARKING * ZXMH C6A07 Top View ISSUE 2 - MAY 2005 1 ZXMHC6A07T8 ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current@V GS =10V; T A =25 C (b)(d) @V GS =10V; T A =70 C (b)(d) @V GS =10V; T A =25 C (a)(d) Pulsed Drain Current (c) Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) (c) Power Dissipation at T A =25C (a)(d) Linear Derating Factor Power Dissipation at T A =25C (b)(d) Linear Derating Factor Operating and Storage Temperature Range (b) SYMBOL V DSS V GS ID N-Channel 60 20 1.8 1.4 1.6 8.4 2.3 8.4 P-Channel -60 20 -1.5 -1.2 -1.3 -7.2 -2.1 -7.2 UNIT V V A A A A A W mW/C W mW/C C I DM IS I SM PD PD T j :T stg 1.3 10.4 1.7 13.6 -55 to +150 THERMAL RESISTANCE PARAMETER Junction to Ambient Junction to Ambient (a)(d) (b)(d) SYMBOL R JA R JA VALUE 94.5 73.3 UNIT C/W C/W Notes: (a) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions with the heatsink split into two equal areas, one for each drain connection. (b) For a device surface mounted on FR4 PCB measured 1.6mm at t 10sec. (c) Repetitive rating - 50mm x 50mm x 1.6mm FR4 PCB, D = 0.02, pulse width 300 s pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. (d) For device with one active die. ISSUE 2 - MAY 2005 2 ZXMHC6A07T8 TYPICAL CHARACTERISTICS ISSUE 2 - MAY 2005 3 ZXMHC6A07T8 N-CHANNEL ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated) PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance Forward Transconductance (1)(3) DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING (2) (3) (1) SYMBOL MIN. TYP. MAX. UNIT CONDITIONS V (BR)DSS I DSS I GSS V GS(th) R DS(on) g fs 60 1 100 1 3.0 0.300 0.450 2.3 V A nA V S I D =250A, V GS =0V V DS =60V, V GS =0V V GS =20V, V DS =0V I =250A, V DS = V GS D V GS =10V, I D =1.8A V GS =4.5V, I D =1.3A V DS =15V,I D =1.8A C iss C oss C rss 166 19.5 8.7 pF pF pF V DS =40V, V GS =0V, f=1MHz Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge Total Gate Charge Gate-Source Charge Gate-Drain Charge SOURCE-DRAIN DIODE Diode Forward Voltage (1) Reverse Recovery Time (3) Reverse Recovery Charge NOTES (3) t d(on) tr t d(off) tf Qg Qg Q gs Q gd 1.8 1.4 4.9 2.0 1.65 3.2 0.67 0.82 ns ns ns ns nC nC nC nC V DS =30V,V GS =10V, I D =1.8A V DS =30V,V GS =5V, I D =1.8A V DD =30V, I D =1.8A R G 6.0, V GS =10V V SD t rr Q rr 0.85 20.5 21.3 0.95 V ns nC T J =25C, I S =0.45A, V GS =0V T J =25C, I F =1.8A, di/dt= 100A/s (1) Measured under pulsed conditions. Width 300s. Duty cycle 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. ISSUE 2 - MAY 2005 4 ZXMHC6A07T8 P-CHANNEL ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated) PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance Forward Transconductance (1)(3) DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING (2) (3) (1) SYMBOL MIN. TYP. MAX. UNIT CONDITIONS V (BR)DSS I DSS I GSS V GS(th) R DS(on) g fs -60 -1 100 -1.0 0.425 0.630 1.8 V A nA V S I D =-250A, V GS =0V V DS =-60V, V GS =0V V GS =20V, V DS =0V I =-250A, V DS = V GS D V GS =-10V, I D =-0.9A V GS =-4.5V, I D =-0.8A V DS =-15V,I D =-0.9A C iss C oss C rss 233 17.4 9.6 pF pF pF V DS =-30 V, V GS =0V, f=1MHz Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge Total Gate Charge Gate-Source Charge Gate-Drain Charge SOURCE-DRAIN DIODE Diode Forward Voltage (1) Reverse Recovery Time (3) Reverse Recovery Charge NOTES (3) t d(on) tr t d(off) tf Qg Qg Q gs Q gd 1.6 2.3 13 5.8 2.4 5.1 0.7 0.7 ns ns ns ns nC nC nC nC V DS =-30V,V GS =-10V, I D =-0.9A V DS =-30V,V GS =-5V, I D =-0.9A V DD =-30V, I D =-1A R G 6.0 , V GS =-10V V SD t rr Q rr -0.85 22.6 23.2 -0.95 V ns nC T J =25C, I S =-0.8A, V GS =0V T J =25C, I F =-0.9A, di/dt= 100A/s (1) Measured under pulsed conditions. Width 300s. Duty cycle 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. ISSUE 2 - MAY 2005 5 ZXMHC6A07T8 N-CHANNEL TYPICAL CHARACTERISTICS ISSUE 2 - MAY 2005 6 ZXMHC6A07T8 N-CHANNEL TYPICAL CHARACTERISTICS ISSUE 2 - MAY 2005 7 ZXMHC6A07T8 P-CHANNEL TYPICAL CHARACTERISTICS ISSUE 2 - MAY 2005 8 ZXMHC6A07T8 P-CHANNEL TYPICAL CHARACTERISTICS ISSUE 2 - MAY 2005 9 ZXMHC6A07T8 PACKAGE OUTLINE Controlling dimensions are in millimeters. Approximate conversions are given in inches PACKAGE DIMENSIONS Millimeters DIM Min A A1 b c D E 0.02 0.24 6.3 3.3 Max 1.7 0.1 0.32 6.7 3.7 Typ. 0.7 Min Max 0.067 Typ. 0.0275 e1 e2 He Lp Inches DIM Min 6.7 0.9 Max 7.3 15 Typ. 4.59 1.53 10 Min Max Typ. 0.1807 0.0602 10 Millimeters Inches 0.008 0.004 - 0.264 0.287 0.035 15 - 0.009 0.013 0.248 0.264 0.130 0.145 (c) Zetex Semiconductors plc 2005 Europe Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park Chadderton, Oldham, OL9 9LL United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ISSUE 2 - MAY 2005 10 |
Price & Availability of ZXMHC6A07T805
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