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| Semiconductor SUF1002 Dual N-channel Trench MOSFET Lithium Ion Battery Application. Notebook PC , Motor drive Application. Features * * * * Low Low Low Low Crss : Crss=36pF(Typ.) gate charge : Qg=4.2nC(Typ.) RDS(on) :RDS(on)=24m(Typ.) VGS(th) : VGS(th)=1.0~3.0V Marking SUF1002 Package Code SOP-8 Ordering Information Type NO. SUF1002 Outline Dimensions 5.88~6.18 3.70~3.90 0.27 Max. 0.52 Max. unit : mm 3.81 Typ. 0.27 Max. 0.46 Min. Block Diagram PIN Connections 1. Source 1 2. Gate 1 3. Source 2 4. Gate 2 5. Drain 2 6. Drain 2 7. Drain 1 8. Drain 1 KSD-T7F001-000 1.24~1.44 1.27 Typ. 4.81~5.01 1 SUF1002 Absolute maximum ratings Characteristic Drain-source voltage Gate-source voltage Drain current (DC) Drain current (Pulsed) * (Ta=25C) Symbol VDSS VGSS ID IDP PD IAS EAS IAR EAR TJ Tstg Rating 30 20 5.8 23.2 2.0 5.8 72 5.8 3.4 150 -55~150 Unit V V A A W A mJ A mJ C Total Power dissipation ** Avalanche current (Single) Single pulsed avalanche energy Avalanche current (Repetitive) Repetitive avalanche energy Junction temperature Storage temperature range * Limited by maximum junction temperature * *Device moonted on a glass-epoxy board Characteristic Thermal resistance Junction-ambient Symbol Rth(J-a) Typ. 62.5 Max Unit /W KSD-T7F001-000 2 SUF1002 Electrical Characteristics Characteristic Drain-source breakdown voltage Gate threshold voltage Drain-source cut-off current Gate leakage current Drain-source on-resistance Forward transfer conductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge (Ta=25C) Symbol BVDSS VGS(th) IDSS IGSS RDS(ON) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Test Condition ID=250A, VGS=0 ID=250A, VDS= VGS VDS=30V, VGS=0V VDS=0V, VGS=20V VGS=10V, ID=2.9A VGS=5.0V, ID=2.9A VDS=5V, ID=5.8A VGS=0V, VDS=10V, f=1MHz Min. 30 1.0 - Typ. 24 28 12 370 60 36 1.2 1.1 2.5 1.1 4.2 0.9 1.4 Max. 3.0 1 100 30 34 560 90 54 6.3 1.4 2.1 Unit V V A nA m m S pF VDD=15V, ID=5.8A RG=10 - VDS=15V, VGS=5V ID=5.8A - ns - nC Source-Drain Diode Ratings and Characteristics Characteristic Source current Source current(Plused) Forward voltage Reverse recovery time Reverse recovery charge (Ta=25C) Symbol IS ISM VSD trr Qrr Test Condition Integral reverse diode in the MOSFET VGS=0V, IS=1.5A Is=1.5A diS/dt=100A/us Min - Typ 90 0.5 Max 1.5 6.0 1.2 - Unit A V ns uC Note ; Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature L=3.4mH, IAS=5.8A, VDD=15V, RG=25 Pulse Test : Pulse Width 300us, Duty cycle 2% Essentially independent of operating temperature KSD-T7F001-000 3 SUF1002 Electrical Characteristic Curves Fig. 1 ID - VDS Fig. 2 ID - VGS Fig. 3 RDS(on) - ID Fig. 4 IS - VSD Fig. 5 Capacitance - VDS Fig. 6 VGS - QG KSD-T7F001-000 4 SUF1002 Fig. 7 VDSS - TJ Fig. 8 RDS(on) - TJ C C Fig. 9 ID - Ta Fig. 10 Safe Operating Area * t KSD-T7F001-000 5 SUF1002 Fig. 11 Gate Charge Test Circuit & Waveform Fig. 12 Resistive Switching Test Circuit & Waveform = Fig. 13 EAS Test Circuit & Waveform KSD-T7F001-000 6 SUF1002 Fig. 14 Diode Reverse Recovery Time Test Circuit & Waveform KSD-T7F001-000 7 SUF1002 The AUK Corp. products are intended for the use as components in general electronic equipment (Office and communication equipment, measuring equipment, home appliance, etc.). Please make sure that you consult with us before you use these AUK Corp. products in equipments which require high quality and / or reliability, and in equipments which could have major impact to the welfare of human life(atomic energy control, airplane, spaceship, transportation, combustion control, all types of safety device, etc.). AUK Corp. cannot accept liability to any damage which may occur in case these AUK Corp. products were used in the mentioned equipments without prior consultation with AUK Corp.. Specifications mentioned in this publication are subject to change without notice. KSD-T7F001-000 8 |
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