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| SKM 200GB125D Absolute Maximum Ratings Symbol Conditions IGBT Values Units SEMITRANS(R) 3 Ultra Fast IGBT Modules SKM 200GB125D SKM 200GAL125D SKM 200GAR125D Freewheeling Diode Inverse Diode Features Module Characteristics Symbol Conditions IGBT min. typ. max. Units Typical Applications GB GAL GAR 1 04-05-2007 SEI (c) by SEMIKRON SKM 200GB125D Characteristics Symbol Conditions Inverse Diode min. typ. max. Units SEMITRANS(R) 3 Ultra Fast IGBT Modules Freewheeling Diode SKM 200GB125D SKM 200GAL125D SKM 200GAR125D Features Module Typical Applications This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. GB GAL GAR 2 04-05-2007 SEI (c) by SEMIKRON SKM 200GB125D Zth Symbol Zth(j-c)l Conditions Values Units SEMITRANS(R) 3 Zth(j-c)D Ultra Fast IGBT Modules SKM 200GB125D SKM 200GAL125D SKM 200GAR125D Features Typical Applications GB GAL GAR 3 04-05-2007 SEI (c) by SEMIKRON SKM 200GB125D Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic 4 04-05-2007 SEI (c) by SEMIKRON SKM 200GB125D Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Transient thermal impedance Fig. 10 CAL diode forward characteristic Fig. 11 Typ. CAL diode peak reverse recovery current Fig. 12 Typ. CAL diode peak reverse recovery charge 5 04-05-2007 SEI (c) by SEMIKRON SKM 200GB125D UL Recognized File 63 532 6 04-05-2007 SEI (c) by SEMIKRON |
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