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DATA SHEET KBJ2000~KBJ2010 SILICON BRIDGE RECTIFIERS VOLTAGE - 50 to 1000 Volts CURRENT - 25.0 Amperes FEATURES * Plastic material has Underwriters Laboratory Flammability Classification 94V-O * Ideal for printed circuit board * Reliable low cost construction utilizing molded plastic technique * Surge overload rating: 400 Amperes * High temperature soldering guaranteed: 260 C/10 seconds/.375"(9.5mm) lead length at 5 lbs. (2.3kg) tension * Pb free product are available : 99% Sn above can meet RoHS environment substance directive request MECHANICAL DATA Case: Reliable low cost construction utilizing molded plastic technique Terminals: Leads solderable per MIL-STD-750, Method 2026 Mounting position: Any Mounting torque: 20 in. lb. Max. Weight: 7.056g MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 C ambient temperature unless otherwise specified. Resistive or inductive load, 60Hz. For Capacitive load derate current by 20%. KBJ 2000 50 35 50 KBJ 2001 100 70 100 KBJ 2002 200 140 200 KBJ 2004 400 280 400 KBJ 2006 600 420 600 KBJ 2008 800 560 800 KBJ 2010 1000 700 1000 PARAMETER SYMBOL UNITS Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current for Resistive Load at Tc =55 Non-repetitive Peak Forward Surge Current, Rated Load Maximum Forward Voltage per Bridge Element at 20A Specified Current Maximum Reverse Leakage Current at Rated @ TA=25 Typical Thermal Resistance(Fig 3 ) Operating Junction and Storage Temperature Range V RRM V RMS V DC V V V I AV 20 A I FSM 300 A VF 1.1 V IR 10 1.2 -50 TO +15 0 uA R QJC T J, T STG /W NOTES : Device mounted on 100mm *100mm * 1.6mm Cu Plate Heatsink. STAD-JAN.28.2005 PAGE . 1 25 IF, INSTANTANEOUS FORWARD CURRENT (A) 30 IO, AVERAGE RECTIFIED CURRENT (A) 100 20 Tj = 25C 10 15 10 1.0 5 Resistive or Inductive load Pulse width = 300s 0 0 25 50 75 100 125 150 0.1 0.0 0.2 0.6 1.0 1.4 1.8 T , TEMPERATURE (C) Fig. 1 Forward Current Derating Curve VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Fwd Characteristics, per element IFSM, PEAK FORWARD SURGE CURRENT (A) Single half-sine-wave (JEDEC method) 1000 350 Tj = 25C f = 1.0MHz 250 Cj, JUNCTION CAPACITANCE (pF) 100 Tj = 25C 100 150 50 0 1 10 NUMBER OF CYCLES AT 60 Hz Fig. 3 Maximum Non-Repetitive Surge Current 10 1 10 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance 100 STAD-JAN.28.2005 PAGE . 2 |
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