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| NN-Channel Power MOS FET NDMOS Structure NLow On-State Resistance : 0.03 (max) NUltra High-Speed Switching NSOP-8 Package NTwo FET Devices Built-in GNotebook PCs GCellular and portable phones GOn-board power supplies GLi-ion battery systems The XP133A1330SR is an N-Channel Power MOS FET with low onstate resistance and ultra high-speed switching characteristics. Two FET devices are built into the one package. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. The small SOP-8 package makes high density mounting possible. Low on-state resistance : Rds (on) = 0.03 ( Vgs = 4.5V ) : Rds (on) = 0.04 ( Vgs = 2.5V ) : Rds (on) = 0.07 ( Vgs = 1.5V ) Ultra high-speed switching Operational Voltage : 1.5V High density mounting : SOP-8 PIN NUMBER 1 2 3 4 5~6 7~8 PIN NAME S1 G1 S2 G2 D2 D1 FUNCTION Source Gate Source Gate Drain Drain 11 Ta=25 OC UNITS V V A A A W O PARAMETER Drain - Source Voltage Gate - Source Voltage Drain Current (DC) Drain Current (Pulse) Reverse Drain Current Continuous Channel Power Dissipation (note) Channel Temperature Storage Temperature SYMBOL Vdss Vgss Id Idp Idr Pd Tch Tstg RATINGS 20 +8 6 20 6 2 150 - 55 ~ 150 C C O ( note ) : When implemented on a glass epoxy PCB 767 DC Characteristics PARAMETER Drain Cut-off Current Gate-Source Leakage Current Gate-Source Cut-off Voltage SYMBOL Idss Igss Vgs (off ) Rds ( on ) CONDITIONS Vds = 20V , Vgs = 0V Vgs = 8V , Vds = 0V Id = 1mA , Vds = 10V Id = 3A , Vgs = 4.5V Drain-Source On-state Resistance ( note ) Forward Transfer Admittance ( note ) Body Drain Diode Forward Voltage ( note ) : Effective during pulse test. Id = 3A , Vgs = 2.5V Id = 1A , Vgs = 1.5V | Yfs | Vf Id = 3A , Vds = 10V If = 6A , Vgs = 0V 0.5 0.025 0.03 0.045 20 0.85 1.1 MIN TYP MAX 10 1 Ta=25C UNITS A A V S V 1.2 0.03 0.04 0.07 Dynamic Characteristics PARAMETER Input Capacitance Output Capacitance Feedback Capacitance SYMBOL Ciss Coss Crss CONDITIONS Vds = 10V , Vgs = 0V f = 1 MHz MIN TYP 950 430 180 MAX Ta=25C UNITS pF pF pF Switching Characteristics PARAMETER Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SYMBOL td ( on ) tr td ( off ) tf Vgs = 5V , Id = 3A Vdd = 10V CONDITIONS MIN TYP 15 20 80 15 MAX Ta=25C UNITS ns ns ns ns 11 Thermal Characteristics PARAMETER Thermal Resistance ( channel-ambience ) SYMBOL Rth ( ch-a ) CONDITIONS Implement on a glass epoxy resin PCB MIN TYP 62.5 MAX UNITS C / W 768 DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE DRAIN CURRENT vs. GATE-SOURCE VOLTAGE DRAIN-SOURCE ON-STATE RESISTANCE vs. GATE-SOURCE VOLTAGE DRAIN-SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT DRAIN-SOURCE ON-STATE RESISTANCE vs. AMBIENT TEMPERATURE GATE-SOURCE CUT-OFF VOLTAGE VARIANCE vs. AMBIENT TEMPERATURE 11 769 CAPACITANCE vs. DRAIN-SOURCE VOLTAGE SWITCHING TIME vs. DRAIN CURRENT GATE-SOURCE VOLTAGE vs. GATE CHARGE REVERSE DRAIN CURRENT vs. SOURCE-DRAIN VOLTAGE STANDARDIZED TRANSITION THERMAL RESISTANCE vs. PULSE WIDTH 11 770 |
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