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NN-Channel Power MOS FET NDMOS Structure NLow On-State Resistance: 0.045 (max) NUltra High-Speed Switching NSOP-8 Package NTwo FET Devices Built-in
GNotebook PCs GCellular and portable phones GOn-board power supplies GLi-ion battery systems
The XP133A0245SR is an N-Channel Power MOS FET with low onstate resistance and ultra high-speed switching characteristics. Two FET devices are built into the one package. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. The small SOP-8 package makes high density mounting possible.
Low on-state resistance : Rds(on)=0.045 (Vgs=4.5V) : Rds(on)=0.060 (Vgs=2.5V) : Rds(on)=0.1 (Vgs=1.5V) Ultra high-speed switching Operational Voltage : 1.5V High density mounting : SOP-8
PIN NUMBER 1 2 3 4 5~6 7~8
PIN NAME S1 G1 S2 G2 D2 D1
FUNCTION Source Gate Source Gate Drain Drain
11
Ta=25C UNITS V V A A A W C C
PARAMETER Drain-Source Voltage Gate-Source Voltage Drain Current (DC) Drain Current (Pulse) Reverse Drain Current Continuous Channel Power Dissipation (note) Channel Temperature Storage Temperature
SYMBOL Vdss Vgss Id Idp Idr Pd Tch Tstg
RATINGS 20 8 5 15 5 2 150 -55~150
Note: When implemented on a glass epoxy PCB
775
DC Characteristics
PARAMETER Drain Cut-off Current Gate-Source Leakage Current Gate-Source Cut-off Voltage Drain-Source On-state Resistance (note) Forward Transfer Admittance (note) Body Drain Diode Forward Voltage
Note: Effective during pulse test.
Ta=25C SYMBOL Idss Igss Vgs(off) Rds(on) CONDITIONS Vds=20V, Vgs=0V Vgs=8V, Vds=0V Id=1mA, Vds=10V Id=3A, Vgs=4.5V Id=3A, Vgs=2.5V Id=1A, Vgs=1.5V Id=3A, Vds=10V If=5A, Vgs=0V MIN TYP MAX 10 1 1.2 0.035 0.047 0.078 12 0.85 1.1 0.045 0.06 0.1 UNITS A A V S V
0.5
Yfs Vf
Dynamic Characteristics
PARAMETER Input Capacitance Output Capacitance Feedback Capacitance SYMBOL Ciss Coss Crss CONDITIONS Vds=10V, Vgs=0V f=1MHz MIN TYP 880 460 150 MAX
Ta=25C UNITS pF pF pF
Switching Characteristics
PARAMETER Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SYMBOL td (on) tr td (off) tf Vgs=5V, Id=3A Vdd=10V CONDITIONS MIN TYP 10 15 65 10 MAX
Ta=25C UNITS ns ns ns ns
11
Thermal Characteristics
PARAMETER Thermal Resistance (channel-ambience) SYMBOL Rth (ch-a) CONDITIONS Implement on a glass epoxy resin PCB MIN TYP 62.5 MAX UNITS C/W
776
DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE
Pulse Test, Ta=25C
DRAIN CURRENT vs. GATE-SOURCE VOLTAGE
Pulse Test, Vds=10V
Drain Current:Id (A)
Drain-Source Voltage:Vds (V)
Drain Current:Id (A)
Gate-Source Voltage:Vgs (V)
DRAIN-SOURCE ON-STATE RESISTANCE vs. GATE-SOURCE VOLTAGE
Pulse Test, Ta=25C
DRAIN-SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT
Pulse Test, Ta=25C
Drain-Source On-State Resistance :Rds (on) ()
Drain-Source On-State Resistance :Rds (on) ()
Gate-Source Voltage:Vgs (V)
Drain Current:Id (A)
DRAIN-SOURCE ON-STATE RESISTANCE vs. AMBIENT TEMPERATURE
Pulse Test
GATE-SOURCE CUT-OFF VOLTAGE VARIANCE vs. AMBIENT TEMPERATURE
Vds=10V, Id=1mA
11
Ambient Temp.:Topr (C)
Gate-Source Cut-Off Voltage Variance :Vgs (off) Variance (V)
Drain-Source On-State Resistance :Rds (on) ()
Ambient Temp.:Topr (C)
777
CAPACITANCE vs. DRAIN-SOURCE VOLTAGE
Vgs=0V, f=1MHz
SWITCHING TIME vs. DRAIN CURRENT
Vgs=5V, Vdd 10V, PW=10sec. duty1%
Switching Time:t (ns)
Capacitance:C (pF)
Drain-Source Voltage:Vds (V)
Drain Current:Id (A)
GATE-SOURCE VOLTAGE vs. GATE CHARGE
Vds=10V, Id=5A
REVERSE DRAIN CURRENT vs. SOURCE-DRAIN VOLTAGE
Pulse Test
Gate-Source Voltage:Vgs (V)
Reverse Drain Current:Id (A)
Gate Charge:Qg (nc)
Source-Drain Voltage:Vsd (V)
STANDARDIZED TRANSITION THERMAL RESISTANCE vs. PULSE WIDTH
11
Rth (ch-a)=62.5C/W, (Implemented on a glass epoxy PCB)
Single Pulse
Pulse Width:PW (sec)
778

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