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| ADVANCE INFORMATION General Physical Specification WCMC2016V1X 128K x 16 Pseudo Static RAM DIE Substrate Connection Req.: Ground Wafer Diameter [mm]: 200.00 Die Size [m]: 4010.74 x 1565.84 Step Size [m]: 4095.44 x 1650.89 Scribe Size [m]: 84.70 x 84.94 Pad Count: 64 Pad Size [m]: 73.6 x 73.6 For product parameters and availability, please refer to the WCMC2016V1X product datasheet available on the Cypress Semiconductor Website (http://www.cypress.com). Mfg Part Number: GC2016V5A Die Part Number: Die Technology: PowerChip 0.165 m Metal I: 420 nm TiN/AlCu Metal II: 880 nm TiN/Ti/AlCu/TiN Metal III: None Die Passivation: 780nm P-Si3N4 + Polyimide Product Thickness Guide Code XW XW14 XW11 Description Die (25-30 mil) in wafer form. Die (14 mil) in wafer form. Die (11 mil) in wafer form. Min 617 320 252 Nom 685 355 280 Max 754 391 308 Unit m m m Weida Semiconductor, Inc. 38-xyxyx Revised August 22, 2001 ADVANCE INFORMATION Bond Pad Locations 64 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 63 61 60 59 58 57 56 55 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 WCMC2016V1X 38-xyxyx Page - 2 - of 5 ADVANCE INFORMATION All units in m. (0,0) is the lower Left hand corner of the die. Bond Pad Coordinates and Signal Descriptions ID 1 2 3 4 5 6 7 8 9 10 11 11 12 13 14 15 16 17 18 19 20 20 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 Pad Name A15 TEST1 A14 TEST2 A13 A12 A11 A10 A9 A8 TEST3 TEST4 WE CE2 VCC VCC VSS VSS UBE LBE TEST5 TEST6 TEST7 A17 A7 A6 A5 A4 A3 A2 A1 A16 VSS VCC I/O15 I/O7 I/O14 I/O6 Pad Function Description ADDR DNU ADDR DNU ADDR ADDR ADDR ADDR ADDR ADDR DNU DNU WE CE2 VCC VCC GND GND BHE BLE DNU DNU DNU ADDR ADDR ADDR ADDR ADDR ADDR ADDR ADDR ADDR GND VCC DQ15 DQ7 DQ14 DQ6 Address Do Not Use Address Do Not Use Address Address Address Address Address Address Do Not Use Do Not Use Write Enable/Select Bar Chip Enable/Select 2 Power Supply (Core) Power Supply (Core) Ground (also VSS) Ground (also VSS) Byte (High) Enable/Select Bar Byte (Low) Enable/Select Bar Do Not Use Do Not Use Do Not Use Address Address Address Address Address Address Address Address Address Ground Power Supply (Core) Bi-directional Data Input/Output 15 Bi-directional Data Input/Output 7 Bi-directional Data Input/Output 14 Bi-directional Data Input/Output 6 X Coord [m] 98.31 98.31 98.31 98.31 98.31 98.31 98.31 98.31 98.31 98.31 98.31 98.31 98.31 98.31 98.31 98.31 98.31 98.31 98.31 98.31 98.31 98.31 98.31 98.31 98.31 98.31 98.31 98.31 98.31 98.31 98.31 1467.54 1467.54 1467.54 1467.54 1467.54 1467.54 1467.54 WCMC2016V1X Y Coord [m] 3950.48 3851.12 3751.76 3652.40 3553.04 3453.68 3354.32 3254.96 3155.60 3056.24 2956.88 2857.52 2758.16 2658.80 2559.44 2460.08 2261.36 2201.66 2261.36 2162.00 2062.64 1963.28 1863.92 1764.56 1665.20 1565.84 1466.48 1367.12 1267.76 1168.40 1069.04 3909.67 3810.31 3710.95 3611.59 3484.95 3358.31 3231.67 38-xyxyx Page - 3 - of 5 ADVANCE INFORMATION ID 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 58 59 60 61 62 Pad Name I/O13 I/O5 I/O12 I/O4 VSS VSS VSS VCC VCC VCC I/O11 I/O3 I/O10 I/O2 I/O9 I/O1 I/O8 I/O0 TEST8 TEST9 OE# VSS VCC TEST10 A0 Pad Function Description DQ13 DQ5 DQ12 DQ4 GND GND GND VCC VCC VCC DQ11 DQ3 DQ10 DQ2 DQ9 DQ1 DQ8 DQ0 DNU DNU OE GND VCC DNU ADDR Bi-directional Data Input/Output 13 Bi-directional Data Input/Output 5 Bi-directional Data Input/Output 12 Bi-directional Data Input/Output 4 Ground (also VSS) Ground (also VSS) Ground (also VSS) Power Supply (Core) Power Supply (Core) Power Supply (Core) Bi-directional Data Input/Output 11 Bi-directional Data Input/Output 3 Bi-directional Data Input/Output 10 Bi-directional Data Input/Output 2 Bi-directional Data Input/Output 9 Bi-directional Data Input/Output 1 Bi-directional Data Input/Output 8 Bi-directional Data Input/Output 0 Do Not Use Do Not Use Output Enable Ground Power Supply (Core) Do Not Use Address X Coord [m] 1467.54 1467.54 1467.54 1467.54 1467.54 1467.54 1467.54 1467.54 1467.54 1467.54 1467.54 1467.54 1467.54 1467.54 1467.54 1467.54 1467.54 1467.54 1467.54 1467.54 1467.54 1467.54 1467.54 1467.54 1467.54 WCMC2016V1X Y Coord [m] 3105.04 2978.4 2851.76 2725.12 2598.20 2498.84 2399.48 2300.12 2200.76 2101.40 2002.04 1875.40 1748.76 1622.13 1495.49 1368.85 1242.21 1115.57 988.61 843.80 744.44 645.08 545.72 446.36 347.00 Die Ordering Information Silicon Type KGD2 Ordering Code WCMC2016V1X-2XWI WCMC2016V1X-2XW14I WCMC2016V1X-2XW11I Wafer Code XW XW14 XW11 Wafer/Die Type Die (25-30 mil) in wafer form. Die (14 mil) in wafer form. Die (11 mil) in wafer form. Operating Range Industrial This datasheet is prepared and approved by Weida Semiconductor, Inc.. Weida Semidonductor, Inc. reserve the right to change the specifications without notice. More Battery Life is a trademark, and MoBL is a registered trademark, of Cypress Semiconductor. 38-xyxyx Page - 4 - of 5 (c) Weida Semiconductor, Inc., 2003. The information contained herein is subject to change without notice. Weida Semiconductor assumes no responsibility for the use of any circuitry other than circuitry embodied in a Weida Semiconductor product. Nor does it convey or imply any license under patent or other rights. Weida Semiconductor does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Weida Semiconductor products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Weida Semiconductor against all charges. ADVANCE INFORMATION Revision History Document Title: WCMC2016V1X MoBL3(R) 2 Mb (128K x 16) Pseudo Static RAM DI Document Number: 38-xyxyx Rev ** ECN Issue Date Orig. Change MPR Description of Change New Datasheet WCMC2016V1X 38-xyxyx Page - 5 - of 5 |
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