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| Dual Power HiPerFETTM Module Phaseleg Configuration High dv/dt, Low trr, HDMOSTM Family VMM 85-02F VDSS = 200 V ID25 = 84 A RDS(on) = 25 mW 3 2 1 3 11 10 9 8 8 9 1 11 10 2 2 = Source 1 8 = Gate 2 10 = Kelvin Source 1 1 = Drain 1, Source 2 3 = Drain 2 9 = Kelvin Source 2 11 = Gate 1 Symbol VDSS VDGR VGS VGSM ID25 ID80 IDM Ptot TJ TJM Tstg VISOL Md Weight Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 10 kW Continuous Transient TC = 25C TC = 80C TC = 25C, tp = 10 s, pulse width limited by TJM TC = 25C Maximum Ratings 200 200 20 30 84 63 335 370 -40 ... +150 150 -40 ... +125 V V V V A A A W C C C V~ V~ Features * Two MOSFET's in phaseleg config. * International standard package * Direct copper bonded Al2O3 ceramic base plate * Isolation voltage 3600 V~ * Low RDS(on) HDMOSTM process * Low package inductance for high speed switching * Kelvin source contact Applications * Switched-mode and resonant-mode power supplies * Uninterruptible power supplies (UPS) 50/60 Hz IISOL 1 mA t = 1 min t=1s 3000 3600 Mounting torque (M5 or 10-32 UNF) Terminal connection torque (M5) Typical including screws 2.25-2.75/20-25 Nm/lb.in. 2.5-4/22-35 Nm/lb.in. 130 g Advantages * * * * Easy to mount with two screws Space and weight savings High power density Low losses Symbol Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 200 2 4 V V VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V VDS = VGS, ID = 8 mA VGS = 20 V DC, VDS = 0 VDS = VDSS, VGS = 0 V, TJ = 25C VDS = 0.8 * VDSS, VGS = 0 V, TJ = 125C VGS = 10 V, ID = 0.5 * ID25 Pulse test, t 300 s, duty cycle d 2% 500 nA 400 A 2 mA 20 25 mW Data per MOSFET unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions (c) 2000 IXYS All rights reserved 1-4 943 VMM 85-02F Symbol Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 40 60 S Dimensions in mm (1 mm = 0.0394") gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd RthJC RthCH dS dA a VDS = 10 V; ID = 0.5 * ID25 pulsed 9600 15000 pF VGS = 0 V, VDS = 25 V, f = 1 MHz 1800 620 70 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 1 W (External), resistive load 80 200 100 380 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 70 190 4500 pF 1500 pF ns ns ns ns 450 nC 110 nC 230 nC 0.33 K/W heatsink compound applied Creepage distance on surface Strike distance through air Allowable acceleration 12.7 9.6 0.2 K/W mm mm 50 m/s2 Source-Drain Diode Symbol IS ISM VSD trr Conditions VGS = 0 V Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 84 335 0.9 200 1.2 400 A A V ns Repetitive; pulse width limited by TJM IF = IS; VGS = 0 V, Pulse test, t 300 s, duty cycle d 2% IF = IS, -di/dt = 100 A/s, VDS = 100 V, VGS = 0 V IXYS MOSFETs and All rights reserved (c) 2000 IXYS IGBTs are covered by one of the following U.S.patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-4 VMM 85-02F ID 200 A 200 VGS = 10 V 9V 8V 7V A VDS = 30 V TJ = 25C 175 150 125 100 175 ID 150 125 100 6V 75 50 25 0 0 1 2 3 4 V 5 V 5V 75 50 25 0 6 0 1 2 3 4 5 6 VGS 7V 8 TJ = 125C DS Fig. 1 Typical output characteristics ID = f (VDS) 1.4 R 1.3 2.50 R 2.25 norm. 2.00 V GS Fig. 2 Typical transfer characteristics ID = f (VGS) normalized to RDS(on) @0.5 ID25, VGS = 10V DS(on) ID = 45 A DS(on) norm. 1.2 = 10 V 1.75 1.50 1.25 1.1 1.0 V GS = 15 V 1.00 0.75 0.9 0.8 0 25 50 75 100 ID 125 A 150 0.50 -50 -25 0 25 50 75 TJ 100 125 C 150 Fig. 3 Typical normalized RDS(on) = f (ID) 100 A Fig. 4 Typical normalized RDS(on) = f (TJ) 1.2 VGS(th) VDSS 1.1 norm. 1.0 0.9 0.8 0.7 -50 VDSS VGS(th) ID 80 60 40 20 0 0 25 50 75 100 125 C 150 TC -25 0 25 50 75 100 C 125 TJ 150 Fig. 5 Continuous drain current ID = f (TC) Fig. 6 Typical normalized VDSS = f (TJ), VGS(th) = f (TJ) (c) 2000 IXYS All rights reserved 3-4 VMM 85-02F 10 V 1000 VDS = 100 V ID = 40 A IG = 2 mA A VGS 8 6 4 ID 100 Limited by RDS(on) t = 1 ms t = 10 ms 10 2 0 0 100 200 300 nC TK = 25C TJ = 150C non-repetitive t = 100 ms 1 400 1 Qg 10 100 VDS V 1000 Fig. 7 Typical turn-on gate charge characteristics 100 nF 10 C Coss Ciss Fig. 8 Forward Safe Operating Area, ID = f (VDS) 200 A 150 IS 100 TJ = 125C TJ = 25C 1 Crss 50 0.1 0 5 10 15 20 V 25 VDS 0 0 0.00 0.25 0.50 0.75 1.00 1.25 V 1.50 VSD Fig. 9 Typical capacitances C = f (VDS), f = 1 MHz 100 s g 80 fs Fig. 10 Typical forward characteristics of reverse diode, IS = f (VSD) 1 K/W D = 0.5 D = 0.2 0.1 60 40 0.01 D = single pulse ZthJK D = 0.1 D=0.05 D=0.02 20 0 0 20 40 60 80 100 A 120 ID 0.001 0.001 0.01 0.1 1 t s 10 Fig. 11 Typical transconductance gfs = f (ID) Fig. 12 Transient thermal resistance ZthJK = f (tp) (c) 2000 IXYS All rights reserved 4-4 |
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