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| VHB25-12F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB25-12F is Designed for Class C, 12.5 V High Band Applications up to 175 MHz. PACKAGE STYLE .380 4L FLG B .112 x 45 A O.125 NOM. FULL R J .125 FEATURES: * Common Emitter * PG = 10 dB at 25 W/175 MHz * OmnigoldTM Metalization System E B C D F E C E MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG JC 4.0 A 36 V 18 V 4.0 V 65 W @ TC = 25 C -65 C to +200 C -65 C to +150 C 3.5 C/W DIM A B C D E F G H I J I GH MINIMUM inches / mm MAXIMUM inches / mm .220 / 5.59 .785 / 19.94 .720 / 18.29 .970 / 24.64 .004 / 0.10 .085 / 2.16 .160 / 4.06 .240 / 6.10 .230 / 5.84 .730 / 18.54 .980 / 24.89 .385 / 9.78 .006 / 0.15 .105 / 2.67 .180 / 4.57 .280 / 7.11 .255 / 6.48 ORDER CODE: ASI10714 CHARACTERISTICS SYMBOL BVCEO BVCES BVEBO ICBO hFE COB PG C IC = 50 mA IC = 15 mA IE = 5.0 mA VCB = 15 V VCE = 5.0 V TC = 25 C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM 18 36 4.0 5.0 UNITS V V V mA --pF dB % IC = 250 mA f = 1.0 MHz POUT = 25 W f = 175 MHz 20 --110 VCB = 12.5 V VCE = 12.5 V 10 60 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. B 1/1 |
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