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| DATA SHEET MOS INTEGRATED CIRCUIT PD16886 MONOLITHIC 1.5-CHANNEL H BRIDGE DRIVER CIRCUIT FOR CAMERAS DESCRIPTION The PD16886 is a monolithic H bridge driver LSI that employs N-channel MOSFETs in its output stage. This IC incorporates a 1.5-channel H bridge circuit and can control two motors that do not operate at the same time. In addition, forward/reverse, brake, and stop functions are available, making this LSI ideal for driving motors such as the motor for winding the camera film and the lens zoom motor. FEATURES Large output current ID(DC) = 1.0 A ID(pulse) = 2.8 A ID(pulse) = 2.2 A On-chip 1.5-channel H bridge circuit Low on-resistance RON = 0.5 max. Sum of the top and bottom on-resistance, total temperature range On-chip standby circuit to set the charge pump circuit to OFF Low-voltage operation is possible (operable at 2.7 V or higher) On-chip undervoltage lockout circuit Mounted in a small-scale package 24-pin plastic TSSOP During continuous operation PW 20 ms, during single operation PW 200 ms, during single operation ORDERING INFORMATION Part Number Package 24-pin plastic TSSOP (5.72 mm (225)) PD16886MA-6A5 The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. S14844EJ2V0DS00 (2nd edition) Date Published May 2002 N CP(K) Printed in Japan (c) 2002 PD16886 ABSOLUTE MAXIMUM RATINGS (TA = 25C: MOUNTED ON GLASS EPOXY BOARD 100 mm x 100 mm x 1 mm, COPPER FILM AREA: 15%) Parameter Supply voltage Symbol VDD VM When charge pump operating At VG external input VG pin apply voltage Input voltage Output current (DC) Output current (pulse) Output current (pulse) Power consumption Peak junction temperature Storage temperature VG VIN ID(DC) ID(pulse) ID(pulse) PT TJ(MAX) Tstg During successive operation PW < 20 ms, single pulse PW < 200 ms, single pulse At VG external input Conditions Ratings -0.5 to +6.0 -0.5 to +4.0 -0.5 to +6.0 8.0 -0.5 to VDD + 0.5 1.0 2.8 2.2 0.7 150 -55 to +150 V V A A A W C C Unit V V RECOMMENDED OPERATING CONDITIONS (TA = 25C: MOUNTED ON GLASS EPOXY BOARD 100 mm x 100 mm x 1 mm, COPPER FILM AREA: 15%) Parameter Supply voltage Symbol VDD VM VG pin apply voltage Output current (DC) Output current (pulse) Output current (pulse) Charge pump capacitor capacitance Operating ambient temperature Peak junction temperature VG ID(DC) ID(pulse) ID(pulse) C1 to C3 TA TJ(MAX) -20 During successive operation PW < 20 ms, single pulse PW < 200 ms, single pulse 0.01 +75 125 Conditions MIN. 2.7 1.6 VM + 3.5 TYP. MAX. 5.5 3.6 7.5 0.8 2.5 2.0 Unit V V V A A A F C C ELECTRICAL SPECIFICATIONS (UNLESS OTHERWISE SPECIFIED, TA = 25C, VDD = VM = 3.0 V) Parameter VDD pin current Symbol IDD IDD(STB) VM pin current in off state Input voltage, high Input voltage, low Input pull-down resistor Output on-resistance IMOFF VIH VIL RIND RON -20C TA 75C ID = 0.8 A C1 = C2 = C3 = 0.01 F 0.8 C1 = C2 = C3 = 0.01 F ID = 0.8 A, see Figures 1 and 2 200 0.35 0.5 STB = VDD STB = GND Control pin at low level 1.8 Conditions MIN. TYP. MAX. 2.0 1.0 1.0 VDD 0.8 Unit mA A A V V k Low voltage detection voltage Charge pump circuit turn-on time H bridge circuit turn-on time H bridge circuit turn-off time VDDS tONC tON tOFF 2.5 1.0 5.0 5.0 V ms s s The output is high impedance during low-voltage detection. = The VG pin voltage when using the charge pump is VG . . VM + 3.6 V. 2 Data Sheet S14844EJ2V0DS PD16886 Figure 1. Charge Pump Characteristics Waveform 50% STB tONC VM + 3.6 V (reference) 90% VG Figure 2. Switching Characteristics Waveform 50% IN 50% tON tOFF IM 50% 50% Data Sheet S14844EJ2V0DS 3 PD16886 BLOCK DIAGRAM VDD C1H C1L C2H C2L VG Oscillator Charge pump circuit BGR circuit VM UVLO STB IN1 IN2 IN3 Controller Level shifter MOS H-bridge circuit OUT1 OUT2 OUT3 LGND PGND PIN CONFIGURATION VM C2L C2H C1L C1H VG LGND STB IN1 IN2 IN3 VDD 1 2 3 4 5 6 7 8 9 10 11 12 24 23 22 21 20 19 18 17 16 15 14 13 N.C. PGND OUT3 N.C. VM N.C. OUT2 PGND OUT1 VM N.C. N.C. Pin No. 1 2 3 4 5 6 7 8 9 10 11 12 Pin Name VM C2L C2H C1L C1H VG LGND STB IN1 IN2 IN3 VDD Pin Function Motor block supply voltage pin Charge pump capacitor connection pin Charge pump capacitor connection pin Charge pump capacitor connection pin Charge pump capacitor connection pin Gate voltage input pin Control block GND pin Standby pin Input pin Input pin Input pin Control block supply voltage pin Pin No. 13 14 15 16 17 18 19 20 21 22 23 24 Pin Name N.C. N.C. VM OUT1 PGND OUT2 N.C. VM N.C. OUT3 PGND N.C. Unused pin Unused pin Pin Function Motor block supply voltage pin H bridge output pin Output block GND pin H bridge output pin Unused pin Motor block supply voltage pin Unused pin H bridge output pin Output block GND pin Unused pin 4 Data Sheet S14844EJ2V0DS PD16886 FUNCTION TABLE (OUTPUT BLOCK CONNECTION) VM SW1 SW3 SW5 OUT1 LOAD1 OUT2 Forward LOAD2 OUT3 Forward SW2 SW4 SW6 GND (Truth Table) Input Signal Circuit Operation IN1 L L L H H H - - IN2 H L H H L H L - IN3 L H H L H H L - STB H H H H H H H L 1 ch forward 1 ch reverse 1 ch brake 2 ch forward 2 ch reverse 2 ch brake Stopped Standby VM OUT1 LOAD1 OUT2 GND VM OUT2 LOAD1 OUT1 GND Only SW2 and SW4 are on VM OUT2 LOAD2 OUT3 GND VM OUT3 LOAD2 OUT2 GND Only SW4 and SW6 are on SW1 to SW6 are all off Charge pump circuit stopped Current Route Unused switches (example: SW1 and SW2 at 2 ch driving) are high impedance. CHARACTERISTICS CURVES PT vs. TA characteristics 1.0 Total power dissipation PT (W) 0.8 0.7 W 178C/W 0.6 0.4 0.2 0 -10 0 20 40 60 80 100 120 Operating ambient temperature TA (C) Data Sheet S14844EJ2V0DS 5 PD16886 CHARACTERISTICS CURVES IDD vs. VDD characteristics 5 TA = 25C VDD pin current IDD (mA) VDD pin current IDD (mA) IDD vs. TA characteristics 5 VDD = 3 V 4 4 3 When operating 2 3 2 1 During standby 0 2 4 6 1 When operating 0 -40 During standby -20 0 20 40 60 80 100 Supply voltage VDD (V) Operating ambient temperature TA (C) RON vs. VM characteristics 0.5 TA = 25C Output on-resistance RON () Output on-resistance RON () RON vs. TA characteristics 0.5 VM = 3 V 0.45 0.45 0.4 0.4 0.35 0.35 0.3 0.3 0.25 0 1 2 3 4 Motor supply voltage VM (V) 0.25 -40 -20 0 20 40 60 80 100 Operating ambient temperature TA (C) RIND vs. TA characteristics Input pull-down resistance RIND (k) VDDS vs. TA characteristics VDD = 3 V Detection voltage at low voltage VDDS (V) 400 4 VDD = 3 V 3 300 200 2 100 1 0 -40 -20 0 20 40 60 80 100 0 -40 -20 0 20 40 60 80 100 Operating ambient temperature TA (C) Operating ambient temperature TA (C) 6 Data Sheet S14844EJ2V0DS PD16886 CHARACTERISTICS CURVES VIH, VIL vs. VDD characteristics 3 High/low-level input voltage VIH, VIL (V) High/low-level input voltage VIH, VIL (V) VIH, VIL vs. TA characteristics 3 VDD = 3 V 2.5 2 1.5 1 0.5 0 -40 VIH VIL TA = 25C VIH 2 VIL 1 0 2 4 6 -20 0 20 40 60 80 100 Supply voltage VDD (V) Operating ambient temperature TA (C) tON, tOFF vs. VM characteristics H bridge circuit turn-on/off time tON, tOFF (s) H bridge circuit turn-on/off time tON, tOFF (s) tON, tOFF vs. TA characteristics 5 VM = 3 V 4 TA = 25C 5 4 3 3 2 tON 1 tOFF 0 1 2 3 4 2 tON 1 tOFF 0 -40 -20 0 20 40 60 80 100 Motor supply voltage VM (V) Operating ambient temperature TA (C) tONC vs. TA characteristics Charge pump circuit turn-on time tONC (ms) Charge pump circuit turn-on time tONC (ms) TONC vs. VM characteristics 1 TA = 25C 0.8 VDD = 3 V 1 0.8 0.6 0.6 0.4 0.4 0.2 0.2 0 -40 -20 0 20 40 60 80 100 0 1 2 3 4 Operating ambient temperature TA (C) Data Sheet S14844EJ2V0DS Motor supply voltage VM (V) 7 8 2.7 V to 5.5 V 10 F 0.01 F 0.01 F 0.01 F DC/DC converter (1) When charge pump used VDD C1H C1L C2H C2L VG Oscillator Charge pump circuit BGR circuit UVLO OUT1 Controller Level shifter OUT2 OUT3 M2 MOS H-bridge circuit M1 1.6 V to 3.6 V VM 10 F Battery EXAMPLE OF STANDARD CONNECTION STB Data Sheet S14844EJ2V0DS Control LSI IN1 IN2 IN3 LGND PGND Remarks 1. To reduce the noise, inserting a tantalum capacitor of about 10 s in the power supply line is recommended. 2. To prevent the noise wraparound, connecting LGND and PGND separately (one point grounding) is recommended. PD16886 2.7 V to 5.5 V DC/DC converter 10 F VM + 3.5 V to 7.5 V VDD C1H C1L C2H C2L VG (2) When VG is externally input Oscillator Charge pump circuit BGR circuit UVLO OUT1 Controller Level shifter OUT2 OUT3 M2 MOS H-bridge circuit M1 IN1 IN2 IN3 1.6 V to 3.6 V VM 10 F Battery STB Data Sheet S14844EJ2V0DS Control LSI LGND PGND Remarks 1. To reduce the noise, inserting a tantalum capacitor of about 10 s in the power supply line is recommended. 2. To prevent the noise wraparound, connecting LGND and PGND separately (one point grounding) is recommended. PD16886 9 PD16886 PACKAGE DRAWING 24-PIN PLASTIC TSSOP (5.72 mm (225)) 24 13 detail of lead end F G R P L S 1 12 E A A' S H I J C D M M K B N S NOTE Each lead centerline is located within 0.10 mm of its true position (T.P.) at maximum material condition. ITEM A A' B C D E F G H I J K L M N P R S MILLIMETERS 6.650.10 6.50.1 0.575 0.5 (T.P.) 0.220.05 0.10.05 1.2 MAX. 1.00.05 6.40.1 4.40.1 1.00.1 0.1450.025 0.5 0.10 0.08 3+5 -3 0.25 0.60.15 S24MA-50-6A5 10 Data Sheet S14844EJ2V0DS PD16886 RECOMMENDED SOLDERING CONDITIONS The PD16886 should be soldered and mounted under the following recommended conditions. For details of the recommended soldering conditions, refer to the document Semiconductor Device Mounting Technology Manual (C10535E). For soldering methods and conditions other than those recommended below, contact an NEC sales representative. Surface Mounting Type Soldering Conditions Soldering Method Soldering Conditions Recommended Condition Symbol IR35-00-3 Infrared reflow Package peak temperature: 235C, Time: 30 seconds max. (at 210C or higher), Count: Three times or less, Exposure limit: None, Flux: Rosin-based flux with low chlorine content (chlorine 0.2Wt% or below) is recommended Package peak temperature: 215C, Time: 40 seconds max. (at 200C or higher), Count: Three times or less, Exposure limit: None, Flux: Rosin-based flux with low chlorine content (chlorine 0.2Wt% or below) is recommended Package peak temperature: 260C, Time: 10 seconds max., Preheating temperature: 120C or lower, Count: Once, Flux: Rosin-based flux with low chlorine content (chlorine 0.2Wt% or below) is recommended VPS VP15-00-3 Wave soldering WS60-00-1 Note Do not use different soldering methods together. Data Sheet S14844EJ2V0DS 11 PD16886 [MEMO] 12 Data Sheet S14844EJ2V0DS PD16886 [MEMO] Data Sheet S14844EJ2V0DS 13 PD16886 [MEMO] 14 Data Sheet S14844EJ2V0DS PD16886 NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS Note: Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. Environmental control must be adequate. When it is dry, humidifier should be used. It is recommended to avoid using insulators that easily build static electricity. Semiconductor devices must be stored and transported in an anti-static container, static shielding bag or conductive material. All test and measurement tools including work bench and floor should be grounded. The operator should be grounded using wrist strap. Semiconductor devices must not be touched with bare hands. Similar precautions need to be taken for PW boards with semiconductor devices on it. 2 HANDLING OF UNUSED INPUT PINS FOR CMOS Note: No connection for CMOS device inputs can be cause of malfunction. If no connection is provided to the input pins, it is possible that an internal input level may be generated due to noise, etc., hence causing malfunction. CMOS devices behave differently than Bipolar or NMOS devices. Input levels of CMOS devices must be fixed high or low by using a pull-up or pull-down circuitry. Each unused pin should be connected to VDD or GND with a resistor, if it is considered to have a possibility of being an output pin. All handling related to the unused pins must be judged device by device and related specifications governing the devices. 3 STATUS BEFORE INITIALIZATION OF MOS DEVICES Note: Power-on does not necessarily define initial status of MOS device. Production process of MOS does not define the initial operation status of the device. Immediately after the power source is turned ON, the devices with reset function have not yet been initialized. Hence, power-on does not guarantee out-pin levels, I/O settings or contents of registers. Device is not initialized until the reset signal is received. Reset operation must be executed immediately after power-on for devices having reset function. Data Sheet S14844EJ2V0DS 15 PD16886 * The information in this document is current as of April, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. * NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. * NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4 |
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