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PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES * * * SMALL PACKAGE OUTLINE: SOT-363 package measures just 2.0 mm x 1.25 mm LOW HEIGHT PROFILE: Just 0.60 mm high TWO DIFFERENT DIE TYPES: Q1 - Ideal oscillator transistor Q2 - Ideal buffer amplifier transistor 0.65 2.0 0.2 1.3 2 Q2 UPA839TF OUTLINE DIMENSIONS (Units in mm) Package Outline TS06 2.1 0.1 1.25 0.1 Q1 1 6 0.22 - 0.05 (All Leads) +0.10 5 DESCRIPTION The UPA839TF contains one NE680 and one NE856 NPN high frequency silicon bipolar chip. NEC's new low profile TF package is ideal for all portable wireless applications where reducing component height is a prime consideration. Each transistor chip is independently mounted and easily configured for oscillator/buffer amplifier and other applications. 3 4 0.6 0.1 0.45 0 ~ 0.1 0.13 0.05 PIN CONNECTIONS 1. Collector (Q1) 4. Base (Q2) 2. Emitter (Q1) 5. Emitter (Q2) 3. Collector (Q2) 6. Base (Q1) Note: Pin 1 is the lower left most pin as the package lettering is oriented and read left to right. ELECTRICAL CHARACTERISTICS (TA = 25C) PART NUMBER PACKAGE OUTLINE SYMBOLS ICBO IEBO hFE PARAMETERS AND CONDITIONS Collector Cutoff Current at VCB = 10 V, IE = 0 Emitter Cutoff Current at VEB = 1 V, IC = 0 DC Current Gain1 at VCE = 3 V, IC = 5 mA Gain Bandwidth at VCE = 3 V, IC = 5 mA Feedback Capacitance2 at VCB = 3 V, IE = 0, f = 1 MHz Insertion Power Gain at VCE = 3 V, IC =5 mA, f = 2 GHz Noise Figure at VCE = 3 V, IC = 5 mA, f = 2 GHz Collector Cutoff Current at VCB = 10 V, IE = 0 Emitter Cutoff Current at VEB = 1 V, IC = 0 DC Current Gain1 at VCE = 3 V, IC = 7 mA Gain Bandwidth at VCE = 3 V, IC = 7 mA, f = 1 GHz Feedback Capacitance2 at VCB = 3 V, IE = 0, f = 1 MHz Insertion Power Gain at VCE = 3 V, IC = 7 mA, f = 1 GHz Noise Figure at VCE = 3 V, IC = 7 mA, f = 1 GHz GHz pF dB dB 7 GHz pF dB dB A A 100 3.0 4.5 0.7 9 1.2 2.5 1.5 5.5 UNITS A A 80 5.5 120 8.0 0.3 7.5 1.9 3.2 1.0 1.0 145 0.7 MIN UPA839TF TS06 TYP MAX 1.0 1.0 200 Q1 fT Cre |S21E|2 NF ICBO IEBO hFE Q2 fT Cre |S21E|2 NF Notes: 1. Pulsed measurement, pulse width 350 s, duty cycle 2 %. 2. Collector to base capacitance when measured with capacitance meter (automatic balanced bridge method), with emitter connected to guard pin of capacitances meter. California Eastern Laboratories UPA839TF ABSOLUTE MAXIMUM RATINGS1 (TA = 25C) SYMBOLS VCBO VCEO VEBO IC PT TJ TSTG PARAMETERS Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature UNITS V V V mA mW C C RATINGS Q1 20 10 1.5 35 Q2 20 12 3 100 ORDERING INFORMATION PART NUMBER UPA839TF-T1 QUANTITY 3000 PACKAGING Tape & Reel 110 110 200 150 150 -65 to +150 Note: 1. Operation in excess of any one of these parameters may result in permanent damage. EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES * Headquarters * 4590 Patrick Henry Drive * Santa Clara, CA 95054-1817 * (408) 988-3500 * Telex 34-6393 * FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) * Internet: http://WWW.CEL.COM 2/99 DATA SUBJECT TO CHANGE WITHOUT NOTICE |
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