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UNISONIC TECHNOLOGIES CO., LTD UF840
8A, 500V, 0.85, N-CHANNEL POWER MOSFET
DESCRIPTION
The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.
1
MOSFET
TO-220
FEATURES
* 8A, 500V, Low RDS(ON)(0.85) * Single Pulse Avalanche Energy Rated * Rugged - SOA is Power Dissipation Limited * Fast Switching Speeds * Linear Transfer Characteristics * High Input Impedance
1
TO-220F
*Pb-free plating product number: UF840L
SYMBOL
D
G
S
ORDERING INFORMATION
Order Number Package Normal Lead Free Plating UF840-TA3-T UF840L-TA3-T TO-220 UF840-TF3-T UF840L-TF3-T TO-220F Note: Pin Assignment: G: GATE D: DRAIN S: SOURCE Pin Assignment 1 2 3 G D S G D S Packing Tube Tube
UF840L-TA3-T (1)Packing Type (2)Package Type (3)Lead Plating (1) T: Tube (2) TA3: TO-220, TF3: TO-220F (3) L: Lead Free Plating, Blank: Pb/Sn
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ABSOLUTE MAXIMUM RATINGS (Ta = 25 , unless Otherwise Specified.)
PARAMETER Drain to Source Voltage (TJ =25 ~125 ) Drain to Gate Voltage (RGS = 20k, TJ =25 ~125 ) Gate to Source Voltage Continuous Tc = 100 Drain Current SYMBOL VDSS VDGR VGS ID RATINGS 500 500 20 8.0 5.1
MOSFET
UNIT V V V A A
Pulsed IDM 32 A Total Power Dissipation (Ta = 25 125 W PD Derating above 25 1.0 W/ Single Pulse Avalanche Energy Rating EAS 510 mJ (VDD=50V, starting TJ =25 , L=14mH, RG=25, peak IAS = 8A) Operating Temperature Range TOPR -55 ~ +150 Storage Temperature Range TSTG -55 ~ +150 Note: 1.Signified recommend operating range that indicates conditions for which the device is intended to be functional, but does not guarantee specific performance limits. 2.Absolute maximum ratings indicate limits beyond which damage to the device may occur.
THERMAL DATA
PARAMETER Thermal Resistance Junction-Ambient Thermal Resistance Junction-Case SYMBOL JA Jc RATINGS 62.5 1.0 UNIT /W
ELECTRICAL SPECIFICATIONS (Ta =25 , unless Otherwise Specified.)
PARAMETER SYMBOL TEST CONDITIONS Drain to Source Breakdown Voltage BVDSS ID = 250A, VGS = 0V (Figure 16) Gate to Threshold Voltage VGS(THR) VGS = VDS, ID = 250A On-State Drain Current (Note 1) ID(ON) VDS > ID(ON) x RDS(ON)MAX, VGS = 10V VDS = Rated BVDSS, VGS = 0V Zero Gate Voltage Drain Current IDSS VDS=0.8xRated BVDSS,VGS=0V,TJ= 125 Gate to Source Leakage Current IGSS VGS = 20V Drain to Source On Resistance RDS(ON) ID = 4.4A, VGS = 10V (Figure 14, 15) (Note 1) Forward Transconductance (Note 1) gFS VDS 50V, ID = 4.4A (Figure 18) Turn-On Delay Time tDLY(ON) VDD=250V, ID 8A, RG = 9.1, RL =30 Rise Time tR Turn-Off Delay Time tDLY(OFF) (Note 2) Fall Time tF Total Gate Charge QG(TOT) VGS =10V, ID =8A,VDS =0.8 x Rated BVDSS IG(REF) =1.5mA (Figure 20) Gate to Source Charge QGS (Note 3) Gate to Drain "Miller" Charge QGD Input Capacitance CISS VDS = 25V, VGS = 0V, f = 1.0MHz Output Capacitance COSS (Figure 17) Reverse - Transfer Capacitance CRSS NOTE : 1. Pulse Test: Pulse width300s, Duty Cycle2%. 2. MOSFET Switching Times are Essentially Independent of Operating Temperature. 3. Gate Charge is Essentially Independent of Operating Temperature. MIN 500 2 8 TYP MAX UNIT V 4 V A 25 A 250 A 100 nA 0.8 4.9 7.4 15 21 50 20 42 7 22 1225 200 85 0.85 21 35 74 30 63 S ns ns ns ns nC nC nC pF pF pF
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INTERNAL PACKAGE INDUCTANCE
PARAMETER SYMBOL MIN Internal Drain Inductance Measured from the contact screw on tab to center of die LD Measured from the drain lead(6mm from package) to center of die Internal Source Inductance LS Measured from the source lead(6mm from header) to source bond pad Remark: Modified MOSFET symbol showing the internal devices inductances as below.
D LD G LS S
MOSFET
TYP 3.5 4.5 7.5
MAX
UNIT nH nH nH
SOURCE TO DRAIN DIODE SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN Source to Drain Diode Voltage TJ = 25 , ISD = 8.0A, VGS = 0V(Figure 19) VSD (Note 1) Continuous Source to Drain Current ISD Note 2 Pulse Source to Drain Current ISDM TJ = 25 , ISD = 8.0A, dISD/dt = 100A/s Reverse Recovery Time tRR 210 TJ = 25 , ISD = 8.0A, dISD/dt = 100A/s Reverse Recovery Charge QRR 2 NOTE : 1. Pulse Test: Pulse width300s, Duty Cycle2%. 2. Modified MOSFET symbol showing the integral reverse P-N junction diode as below.
D
TYP MAX UNIT 2 8 32 970 8.2 V A A ns C
475 4.6
G
S
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TEST CIRCUITS AND WAVEFORMS
VDS
MOSFET
L VARY tp TO OBTAIN REQUIRED PEAK IAS VGS DUT tp + VDD -
RG
0V
IAS 0.01
FIGURE 1. UNCLAMPED ENERGY TEST CIRCUIT
BVDSS tp IAS VDS VDD
0 tAV
FIGURE 2. UNCLAMPED ENERGY WAVEFORMS
RL + VDD DUT
RG
VGS
FIGURE 3. SWITCHING TIME TEST CIRCUIT
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TEST CIRCUITS AND WAVEFORMS (Cont.)
tON tDLY(ON) tR VDS 90% tOFF t DLY(OFF) tF 90%
MOSFET
0
10% 90%
10%
VGS 0 10%
50% PULSE WIDTH
50%
FIGURE 4. RESISTIVE SWITCHING WAVEFORMS
CURRENT REGULATOR VDS (ISOLATED SUPPLY)
12V BATTERY
0.2
F
SAME TYPE AS DUT 50K 0.3 F
D DUT
G
IG (REF) 0 IG CURRENT SAMPLING RESISTOR
S VDS ID CURRENT SAMPLING RESISTOR
FIGURE 5. GATE CHARGE TEST CIRCUIT
VDD QG(TOT) QGD QGS VGS
VDS 0 IG(REF) 0
FIGURE 6. GATE CHARGE WAVEFORMS
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TYPICAL CHARACTERISTICS
Figure 7. Normalized Power Dissipation vs. Case Temperature 1.2 10 8
MOSFET
Figure 8. Maximum ContionuousDrain Current vs. Case Temperature
Power Dissipation Multiplier
1.0 0.8 0.6 0.4 0.2 0
Drain Current, I D (A)
50 100 ) 150
6 4 2 0 25 50 75 100 125 ) Case Temperature, TC (
0
150
Case Temperature, TC (
Figure 9. Normalized Maximum Transient Thermal Impedance 100
Normalized Transient Thermal Impedance, Z JC
Figure 10. Forward Bias Safe Operating Area
1 0.5 10-1 0.2 0.1 PDM 0.05 t1 0.02 t2 0.01 Notes: Duty Factor: D=t1/t2 Peak TJ =PDMxZ JCxR JC +TC 10-3 10-2 10-1 1 10
Drain Current, ID (A)
Operation in This Region is Limited by rDS (on)
10 s 100 s
10
1ms 10ms
10-2 Single pulse 10-3 10-5 10-4
1 T C=25 T J=Max Rated Single Pulse 1 10 10
2
DC
0.1
10
3
Rectangular Pulse Duration, t1 (s)
Drain to Source Voltage, VDS (V)
Figure 11. Output Characteristics 15 12 15 12
Figure 12. Saturation Characteristics
VGS=10V
Pulse Duration=80 s Duty Cycle = 0.5% Max VGS=6.0V
Pulse Duration=80 s Duty Cycle = 0.5% Max
VGS=10V
Drain Current, I D (A)
Drain Current, I D (A)
9 VGS=5.5V 6 3 0 VGS=5.0V VGS=4.5V 0 50 100 150 VGS=4.0V 200 250
9 6 3 VGS=4.0V 0 0 3 6
VGS =6.0V VGS=5.5V
VGS=5.0V VGS=4.5V 9 12 15
Drain to Source Voltage, VDS (V)
Drain to Source Voltage, VDS (V)
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TYPICAL CHARACTERISTICS(Cont.)
Figure 13. Transfer Characteristics
Drain to Source on Resistance, rDS (ON) ( )
MOSFET
Figure 14. Drain to Source on Resistance vs. Voltage and Drain Current 10 8 6 VGS =10V 4 2 0 Pulse Duration =80 s Duty Cycle = 0.5% Max
100
Drain to Source Current, IDS (ON), (A)
10
Pulse Duration=80 s Duty Cycle = 0.5% Max VDS 50V
1 TJ = 150 0.1 T J = 25
VGS=20V
0.01
0
2
4
6
8
10
0
8
16
24
32
40
Gate to Source Voltage, VSD (V)
Case Temperature, TC ( )
Figure 15. Normalized Drain to Source on Resistance vs. Junction Temperature
Figure 16. Normalized Drain to Source Breakdown Voltage vs. Junction Temperature
Normalized Drain to Source Breakdown Voltage
3.0
Normalized Drain to Source on Resistance Voltage
Pulse Duration=80 s Duty Cycle = 0.5% Max 2.4 VGS =10V, I D=4.4A 1.8 1.2 0.6 0 -60 -40 -20 0
1.25 1.15 1.05 0.95 0.85
I D=250 A
20 40 60 80 100 120 140 160 )
0.75 -60 -40 -20
0
20 40 60 80 100 120 140 160
Junction Temperature, TJ (
Junction Temperature, TJ ( )
Figure 18. Transconductancevs. Drain Current
Figure 17. Capacitance vs. Drain to Source Voltage
3000 2400
Transconductance, gFS (S)
Capacitance, C (pF)
VGS =0V, f=1MHz CISS =CGS+CGD CRSS=CGD COSS CDS+CGD CISS
15 Pulse Duration=80 s Duty Cycle = 0.5% Max 12 VDS 50V 9 6 3 0 TJ= 25 TJ= 150
1800 1200 COSS 600 0 CRSS
1
2
5
10
2
5
102
0
3
6
9
12
15
Drain to Source Voltage, VDS (V)
Drain Current, ID (A)
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TYPICAL CHARACTERISTICS(Cont.)
Figure 19. Source to Drain DIODE Voltage Figure 20. Gate to Source Voltage vs. Gate Charge 20 ID=8A
MOSFET
100
Source to Drain Current, I SD (A)
Gate to Source Voltage, VGS (V)
Pulse Duration=80 s Duty Cycle = 0.5% Max
16 VDS=100V 12 VDS=250V 8 4 0 VDS=400V
10 TJ=150 1.0 TJ=25
0.1
0
0.6 0.3 0.9 1.2 Source to Drain Voltage, VSD (V)
1.5
0
12
36 4 24 Gate Charge, QG (nC) 8
60
UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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