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| U30GWJ2C53C TOSHIBA Schottky Barrier Rectifier Stack Trench Schottky Barrier Type U30GWJ2C53C Switching Mode Power Supply Application Converter&Chopper Application * * * Repetitive peak reverse voltage: VRRM = 40 V Average output recified current: IO = 30 A Power surface mount device for thin flat package. "TFP" (Toshiba package name) Unit: mm Maximum Ratings (Ta = 25C) Characteristics Repetitive peak reverse voltage Repetitive peak reverse surge voltage (Note1) Average output recified current Peak one cycle surge forward current (non-repetitive, sine wave) Junction temperature Storage temperature range Symbol VRRM VRRSM IO IFSM Tj Tstg Rating 40 48 30 300 (50 Hz) 330 (60 Hz) -40 to 125 -40 to 150 Unit V V A A C C JEDEC JEITA TOSHIBA 12-9B1A < Note1: Pulse width (tw) = 500 ns, duty (tw/T) < 1/25 = Weight: 0.74 g (typ.) Polarity K *A1 A2 *: Common Terminal Handling Precaution Schottky barrier diodes are having large-reverse-current-leakage characteristic compare to other rectifier products. This current leakage and not proper operating temperature or voltage may cause thermal runaway. Please take forward and reverse loss into consideration when you design. 1 2003-02-17 U30GWJ2C53C Electrical Characteristics (Ta = 25C) Characteristics Peak forward voltage Repetitive peak reverse current Junction Capacitance Thermal resistance Symbol VFM IRRM Cj Rth (j-c) Test Condition IFM = 15 A VRRM = 40 V VR = 10 V, f = 1.0 MHz DC Total, Junction to Case Min 3/4 3/4 3/4 3/4 Typ. 3/4 3/4 660 3/4 Max 0.55 15 3/4 1.2 Unit V mA pF C/W Note2: VFM, IRRM, Cj: A value of one cell. Marking 1 2 1 2 3 3 C Lot Number Month (starting from alphabet A) Year (last number of the christian era) MARK 30GWJ2C TYPE U30GWJ2C53C Standard Soldering Pad 8.0 unit: mm 2.5 2.0 3.2 3.8 2.0 2.0 6.0 2 2003-02-17 U30GWJ2C53C iF - vF 100 One cell 24 PF (AV) - Io sin 20 90 16 60 a = 30 120 180 (A) Tj = 150C Instantaneous forward current 10 100C 75C Average forward power dissipation PF (AV) (W) iF 12 25C 1 Rectangular waveform (one cell) 8 4 0 a 360 Conduction angle a 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 0 4 8 12 16 20 24 28 32 36 Instantaneous forward voltage vF (V) Average output rectified current Io (A) Tc max - Io 140 500 Surge forward current (non-repetitive) One cell Single phase full Sine wave Ta = 25C Maximum allowable case temperature Tc max (C) 120 180 a = 30 80 60 40 0 a 360 20 0 0 Conduction angle a 4 8 12 16 20 24 28 32 36 Rectangular waveform (one cell) 60 90 120 sin (A) Peak surge forward current IFSM 400 300 100 200 60 Hz 50 Hz 100 0 1 10 100 Average output rectified current Io (A) Number of cycles rth (j-c) - t 10 One cell 10000 Cj - VR (typical) f = 1 MHz Ta = 25C (V) Transient thermal impedance rth (j-c) (C/W) One cell Junction capacitance 0.01 0.1 1 10 Cj 1 1000 0.1 0.001 100 1 100 1000 10 100 Time t (s) Reverse voltage VR (V) 3 2003-02-17 U30GWJ2C53C I R - Tj 1000 Pulse measurement 100 (one cell) (typical) 3.0 Rectangular waveform 0 2.0 V R 360 PR (AV) - VR (typical) Average reverse power dissipation PR (AV) (W) (mA) DC 300 Conduction angle a Tj = 150C 1.0 120 60 180 240 Reverse current IR 10 40 1 20 VR = 10 V 0.1 30 0.01 0 25 50 75 100 125 150 0.0 0 10 20 30 40 Junction temperature Tj (C) Reverse voltage VR (V) 4 2003-02-17 U30GWJ2C53C RESTRICTIONS ON PRODUCT USE 000707EAA * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 5 2003-02-17 |
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