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Datasheet File OCR Text: |
10A 800V TO-262 THYRISTOR Type TSN10A80 Cnstruction : Planner Structure Reverse Conducting Futures : High VDRM & Permissonable di/dt Application : Stater for HID Lump Bullust Circuit weight : 1.45g Symbol VDRM ITRM Conditions Tj=25C Tc 100 C, VDM 400V IG 80mA, dig/dt 0.5A/s tw 1.0s di/dt 1500A/s duty 0.005 Tc 100 C, tw 1.0s duty 0.005 Tc 100 C, VDM 400V IG 80mA, dig/dt 0.5A/s ITM 500A, tw 1.0s 50Hz, 1min., without CoolingFin f 50Hz, duty 10 Max. Rated Value 800 500 Unit V A Absolute Maximum Ratings Rating Repetitive Peak off-state Voltage Repetitive Peak On-State Current * Repetitive Peak Forward Current * Critical Rate of Rise of Off-State Voltage Permissible Rate of Down of On-State Current * PeakGate Power Average Gate Power PeakForward Gate Current PeakForward Gate Voltage PeakReverse Gate Voltage Operating Junction Temperature Range Storage Temperature Range IFRM 500 A di/dt 1500 A/s PGM PG(AV) IGM VGM VRGM Tjw Tstg 5 0.5 W W A V V C C f 50Hz, duty 10 2 10 5 -40 to +125 -40 to +150 * notes : Test Circuit & Current Wave Form R SW L 0.5*ITM 0.1*ITM ITM VDM C Thyristor Sample t tw di/dt = 0.4 * ITM/t Electrical Characteristics (Tj = 25 C) Characteristics Peak Off-State Current Peak On-State Voltage Peak Forward Voltage Gate Trigger Current Gate Trigger Voltage HoldingCurrent LatchingCurrent Thermal Resistance Thermal Resistance Symbol IDM VTM VFM IGT VDM=6V, RL=10ohm VGT IH IL Rth(j-c) Rth(j-a) IG=50mA, ITM=1A IG=50mA Junction to Case Junction to Ambient 7 13 5 80 1.0 V mA mA C/W C/W Conditions VDM = VDRM ITM=20A IFM=10A Min. Typ. Max. 100 1.50 1.50 20 Unit A A A mA TSN10A08 OUTLINE DRAWING (Dimension: mm) |
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