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| TPC8207 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPC8207 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications * * * * * Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 16 m (typ.) High forward transfer admittance: |Yfs| = 11 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 20 V) Enhancement-mode: Vth = 0.5~1.2 V (VDS = 10 V, ID = 200 A) Unit: mm Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD (1) PD (2) PD (1) PD (2) EAS IAR EAR Tch Tstg Rating 20 20 12 6 24 1.5 W 1.1 Unit V V V A JEDEC JEITA TOSHIBA 2-6J1E Single-device operation (Note 3a) Single-device value at dual operation (Note 3b) Single-device operation (Note 3a) Single-device value at dual operation (Note 3b) Weight: 0.08 g (typ.) 0.75 W 0.45 Circuit Configuration 8 7 6 5 Single pulse avalanche energy (Note 4) Avalanche current Repetitive avalanche energy Single-device value at dual operation (Note 2a, 3b, 5) Channel temperature Storage temperature range 46.8 6 0.1 150 -55~150 mJ A mJ C C 1 2 3 4 Note 1, Note 2, Note 3, Note 4 and Note 5: See the next page. This transistor is an electrostatic-sensitive device. Please handle with caution. 1 2004-07-06 TPC8207 Thermal Characteristics Characteristics Single-device operation (Note 3a) Symbol Rth (ch-a) (1) Rth (ch-a) (2) Rth (ch-a) (1) Rth (ch-a) (2) Max 83.3 C/W 114 Unit Thermal resistance, channel to ambient (Note 2a) Single-device value at (t = 10 s) dual operation (Note 3b) Thermal resistance, channel to ambient (Note 2b) Single-device value at (t = 10 s) dual operation (Note 3b) Single-device operation (Note 3a) 167 C/W 278 Marking (Note 6) TPC8207 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Note 1: Ensure that the channel temperature does not exceed 150C. Note 2: a) Device mounted on a glass-epoxy board (a) FR-4 25.4 x 25.4 x 0.8 (Unit: mm) b) Device mounted on a glass-epoxy board (b) FR-4 25.4 x 25.4 x 0.8 (Unit: mm) (a) (b) Note 3: a) b) The power dissipation and thermal resistance values are shown for a single device (During single-device operation, power is only applied to one device.). The power dissipation and thermal resistance values are shown for a single device (During dual operation, power is evenly applied to both devices.). Note 4: VDD = 16 V, Tch = 25C (initial), L = 1.0 mH, RG = 25 , IAR = 6 A Note 5: Repetitive rating: pulse width limited by max channel temperature. Note 6: * on lower right of the marking indicates Pin 1. Weekly code: (Three digits) Week of manufacture (01 for the first week of a year, : sequential number up to 52 or 53) Year of manufacture (The last digit of a year) 2 2004-07-06 TPC8207 Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth Test Condition VGS = 10 V, VDS = 0 V VDS = 20 V, VGS = 0 V ID = 10 mA, VGS = 0 V ID = 10 mA, VGS = -12 V VDS = 10 V, ID = 200 A VGS = 2.0 V, ID = 4.2 A Drain-source ON resistance RDS (ON) VGS = 2.5 V, ID = 4.2 A VGS = 4.0 V, ID = 4.8 A Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-ON time Switching time Fall time Turn-OFF time Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain ("miller") charge tf toff Qg Qgs1 Qgd VDD 16 V, VGS = 5 V, ID = 6 A - |Yfs| Ciss Crss Coss tr ton VGS 5 V 0V VDS = 10 V, VGS = 0 V, f = 1 MHz VDS = 10 V, ID = 3.0 A Min Typ. Max Unit 20 8 0.5 22 19 16 11 2010 210 240 6 14 22 94 22 3.2 4.7 10 10 A A V V 1.2 45 30 20 5.5 m S ID = 3 A VOUT pF RL = 3.3 4.7 ns nC VDD 10 V - Duty < 1%, tw = 10 s = Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol IDRP VDSF Test Condition Min Typ. Max 24 Unit A V IDR = 6 A, VGS = 0 V -1.2 3 2004-07-06 TPC8207 ID - VDS 10 8 8 10 4 6 2 Common source, Ta = 25C, Pulse test 1.7 20 10 8 4 6 2 1.9 ID - VDS Common source Ta = 25C Pulse test 16 (A) (A) 1.65 6 1.6 1.55 4 1.5 2 1.8 12 1.7 8 1.65 1.6 1.55 4 VGS = 1.3 V 0 0 1.5 1.4 4 5 ID Drain current 1.4 VGS = 1.3 V 0 0 Drain current ID 0.2 0.4 0.6 0.8 1 1 2 3 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID - VGS 20 Common source VDS = 10 V Pulse test 1.0 VDS - VGS Common source Ta = 25C Pulse test (V) VDS Drain-source voltage 16 0.8 ID (A) 12 0.6 Drain current 8 100 25 4 Ta = -55C 0 0 1 2 3 4 5 0.4 3 0.2 4 ID = 6 A 0 0 2 4 6 8 10 12 Gate-source voltage VGS (V) Gate-source voltage VGS (V) |Yfs| - ID 1000.0 Common source VDS = 10 V Pulse test 1000 RDS (ON) - ID Common source Ta = 25C Pulse test Forward transfer admittance Yfs (S) Drain-source ON resistance RDS (ON) (m) 100.0 25 -55 Ta = 100C 10.0 100 4 VGS = 2 V 2.5 10 6 1.0 0.1 1.0 10.0 100.0 1 0.1 1 10 100 Drain current ID (A) Drain current ID (A) 4 2004-07-06 TPC8207 RDS (ON) - Ta 50 Common source 40 Pulse test 100 IDR - VDS Drain-source ON resistance RDS (ON) (m) VGS = 2.5 V IDR (A) VGS = 2 V 5, 10 10 3 1 VGS = 0 V 1.5A, 3A 20 VGS = 4 V ID = 1.5A, 3 A, 6A Drain reverse current 30 ID = 6 A 1 Common source Ta = 25C Pulse test 0.1 -0 10 ID = 1.5 A, 3A, 6A 0 -80 -40 0 40 80 120 160 -0.2 -0.4 -0.6 -0.8 -1 -1.2 Ambient temperature Ta (C) Drain-source voltage VDS (V) Capacitance - VDS 10000 1.4 Vth - Ta Common source VDS = 10 V ID = 200 A Pulse test Ciss Vth (V) Gate threshold voltage 1.2 1.0 0.8 0.6 0.4 0.2 (pF) Capacitance C 1000 Coss Crss 100 Common source Ta = 25C VGS = 0 V f = 1 MHz 1 10 100 10 0.1 0 -80 -40 0 40 80 120 160 Ambient temperature Ta (C) Drain-source voltage VDS (V) PD - Ta 2.0 Device mounted on a glass-epoxy board (a) (Note 2a) (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) Dynamic input/output characteristics 16 VDS 8 (W) (V) PD VDS 1.5 (1) Drain power dissipation Drain-source voltage 1.0 (3) 8 Common source ID = 6 A Ta = 25C VGS Pulse test 4 0.5 (4) 4 2 0 0 50 100 150 200 0 0 8 16 24 32 0 Ambient temperature Ta (C) Total gate charge Qg (nC) 5 2004-07-06 Gate-source voltage (2) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b) t = 10 s 8V 12 4V VDD = 16 V 6 VGS (V) TPC8207 rth - tw 1000 Device mounted on a glass-epoxy board (a) (Note 2a) (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) 100 (4) Single-device value at dual operation (Note 3b) (4) (3) (2) Normalized transient thermal impedance rth (C/W) (1) 10 1 0 0.001 0.01 0.1 1 10 100 1000 Pulse width tw (S) Safe operating area 100 50 30 ID max (pulse) * 10 Single-device value at dual operation (Note 3b) 1 ms * 10 ms * (A) Drain current ID 5 3 1 0.5 0.3 0.1 0.05 * Single pulse Ta = 25C 0.03 Curves must be derated linearly with increase in temperature. 0.01 0.01 0.03 0.1 0.3 1 VDSS max 3 10 30 100 Drain-source voltage VDS (V) 6 2004-07-06 TPC8207 RESTRICTIONS ON PRODUCT USE * The information contained herein is subject to change without notice. 030619EAA * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 7 2004-07-06 |
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