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| SEMICONDUCTOR TECHNICAL DATA MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE. FEATURES High DC Current Gain. : hFE=1000(Min.), VCE=-4V, IC=-1A. Low Collector-Emitter Saturation Voltage. Complementary to TIP112. H L C TIP117 EPITAXIAL PLANAR PNP TRANSISTOR A R S E F D P Q T C MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range DC Pulse DC Ta=25 Tc=25 ) SYMBOL VCBO VCEO VEBO IC ICP IB PC Tj Tstg RATING -100 -100 -5 -2 -4 -50 2 50 150 -65 150 B M M V V V A J 1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER TO-220AB mA W EQUIVALENT CIRCUIT C O 1 2 3 N UNIT K DIM A B C D E F G H J K L M N O P Q R S T MILLIMETERS 10.30 MAX 15.30 MAX 0.80 _ 3.60 + 0.20 3.00 6.70 MAX _ 13.60 + 0.50 5.60 MAX 1.37 MAX 0.50 1.50 MAX 2.54 4.70 MAX 2.60 1.50 MAX 1.50 _ 9.50 + 0.20 _ 8.00 + 0.20 2.90 MAX G B R1 = 10k R2 = 0.6k E ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Output Capacitance ) SYMBOL ICEO ICBO IEBO hFE VCEO(SUS) VCE(sat) VBE(ON) Cob TEST CONDITION VCE=-50V, IB=0 VCB=-100V, IE=0 VEB=-5V, IC=0 VCE=-4V, IC=-1A VCE=-4V, IC=-2A IC=-30mA, IB=0 IC=-2A, IB=-8mA VCE=-4V, IC=-2A VCB=-10V, IE=0, f=0.1MHz MIN. 1000 500 -100 TYP. MAX. -2 -1 -2 -2.5 -2.8 200 V V V pF UNIT mA mA 1999. 11. 16 Revision No : 1 1/2 TIP117 I C - V CE -5 COLLECTOR CURRENT I C (A) -4 -3 -2 -1 -1 0 A 00 h FE - I C -50 0A 00A -4 A -300 100K DC CURRENT GAIN h FE 30K 10K 300 100 30 10 -0.01 VCE =-4V -900A -800A -700A -600A -200A I B =-100A 0 -1 -2 -3 -4 -5 -0.1 -1 -10 COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR CURRENT I C (A) V BE(sat) , V CE(sat) - I C 100 SATURATION VOLTAGE VBE(sat) ,V CE(sat) (V) 30 10 3 1 0.3 0.1 0.01 V BE(sat) VCE(sat) I C /I B =500 C ob - V CB 1k 500 300 100 50 30 10 5 3 1 -0.01 f=0.1MHz CAPACITANCE Cob (pF) 0.1 1 10 -0.1 -1 -10 -100 COLLECTOR CURRENT I C (A) COLLECTOR-BASE VOLTAGE VCB (V) SAFE OPERATING AREA P D - Ta POWER DISSIPATION P D (W) 70 60 50 40 30 20 10 0 0 50 100 150 200 CASE TEMPERATURE Ta ( C) COLLECTOR CURRENT I C (A) 80 10 5 3 DC OPERATION Tc=25 C I C MAX(PULSED) 1m s 5m s 1 0.5 0.3 SINGLE NONREPETITIVE PULSE Tc=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE 0.1 1 3 5 10 30 50 100 COLLECTOR-EMITTER VOLTAGE V CE (V) 1999. 11. 16 Revision No : 1 2/2 |
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