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| Product Data Sheet September 26, 2002 17-21 GHz Medium Power Amplifier * * * * * * TGA9088A-SCC Key Features and Performance 0.25um PHEMT Technology 17-21GHz Frequency Range 22 dBm @ P2dB Nominal Pout 18.5 dB Nominal Gain IRL>18 dB, ORL>10 dB 7V, 66mA Self Bias Primary Applications Chip Dimensions 2.4mm x 1.5 mm x 0.1mm * * Satellite Systems Point-to-Point Radio Description The TriQuint TGA9088A-SCC is a 17-21 GHz 0.125 Watt self-biased Medium Power Amplifier in MMIC form. The part is designed using TriQuint's proven standard 0.25 um gate PHEMT production process with 100 um substrate technology. This MPA provides a nominal 22 dBm of output power at 2 dB gain compression with a nominal small signal gain of 18.5 dB. The part provides an economical solution for a 20 GHz driver and provides application solutions for the Satellite and Point-to-Point Radio markets The TGA9088A-SCC is 100% DC and RF tested on-wafer to ensure performance compliance. Typical Electrical Characteristics 7V, 66mA Self Bias 25 20 G ain (dB) 15 10 5 0 17 18 19 Frequency (GHz) 20 21 25 20 P 2 d B (d B m ) 15 10 5 0 17 18 19 Frequency (GHz) 20 21 TriQuint Semiconductor Texas : Phone (972)994 8465 Fax (972)994 8504 Web: www.triquint.com 1 Product Data Sheet September 26, 2002 TGA9088A-SCC TABLE I MAXIMUM RATINGS 6/ SYMBOL V I + + PARAMETER Positive Supply Voltage Positive Supply Current (Quiescent) Gate Supply Current Input Continuous Wave Power Power Dissipation Operating Channel Temperature Mounting Temperature (30 Seconds) Storage Temperature VALUE 8V 90 mA 3.5 mA 17 dBm 0.615 W 150 C 320 C -65 to 150 C 0 0 0 NOTES 4/ 5/ 4/ | IG | PIN PD TCH TM TSTG 3/ 4/ 1/ 2/ 1/ 2/ These ratings apply to each individual FET. Junction operating temperature will directly affect the device median time to failure (TM). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. When operated at this bias condition with a base plate temperature of 70 C (Tch = 149.27 C), the median life is reduced from 6.9E+6 to 1.1E+6 hrs. Combinations of supply voltage, supply current, input power, and output power shall not exceed PD. Total current for the entire MMIC. These ratings represent the maximum operable values for this device. 0 0 3/ 4/ 5/ 6/ TABLE II DC PROBE TESTS (TA = 25 C Nominal) SYMBOL Imax1 GM1 VP1,2 VBVGS1 VBVGD1 PARAMETER Maximum Current Transconductance Pinch-off Voltage Breakdown Voltage gate-source Breakdown Voltage gate-drain MINIMUM 56 33 -1.5 -30 -30 MAXIMUM 102 80 -0.5 -8 -12 VALUE mA mS V V V TriQuint Semiconductor Texas : Phone (972)994 8465 Fax (972)994 8504 Web: www.triquint.com 2 Product Data Sheet September 26, 2002 TGA9088A-SCC TABLE III ON-WAFER RF PROBE CHARACTERISTICS (TA = 25 C Nominal) Self Bias Vd = 7 V TEST CONDITION 45mA Id80mA F = 17 - 21 GHz* LIMIT TYP MAX 18.5 --0 SYMBOL PARAMETER MIN 16 UNITS dB Gain Small Signal Gain IRL Input Return Loss F = 17 - 21 GHz* --- -15 -7 dB ORL Output Return Loss F = 17 - 21 GHz* F = 17 GHz ** --17 -13 19 22 -6 dB P2dB Output Power @ 2dB Compression ----- F = 19 - 21 GHz ** dBm 20 * S-parameter data is taken at 1GHz step size. ** Power data is taken at 2 GHz step size. TABLE IV THERMAL INFORMATION* PARAMETER TEST CONDITIONS Vd = 7 V ID = 66 mA Self Bias Pdiss = 0.462 W TCH O ( C) RJC (C/W) TM (HRS) RJC Thermal Resistance (channel to backside of carrier) 128.35 126.30 6.9E+6 Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn Solder mounted to a 20 mil CuMo Carrier at 70C baseplate temperature. Worst case condition with no RF applied, 100% of DC power is dissipated. * This information is a result of a thermal model. TriQuint Semiconductor Texas : Phone (972)994 8465 Fax (972)994 8504 Web: www.triquint.com 3 Product Data Sheet September 26, 2002 TGA9088A-SCC Typical On-Wafer Electrical Characteristics 7V, 66mA Self Bias 25 24 23 22 Gain (dB) 21 20 19 18 17 16 15 17 18 19 Frequency (GHz) 20 21 5th 10th 20th 30th 40th 50th 60th 70th 80th 90th 95th 25 Output Power @ 2dB Compression (dBm) 24 23 22 21 20 19 18 17 16 15 17 18 19 Frequency (GHz) 20 21 5th 10th 20th 30th 40th 50th 60th 70th 80th 90th 95th TriQuint Semiconductor Texas : Phone (972)994 8465 Fax (972)994 8504 Web: www.triquint.com 4 Product Data Sheet September 26, 2002 TGA9088A-SCC Typical On-Wafer Electrical Characteristics 7V, 66mA Self Bias 0 -5 Output Return Loss (dB) -10 -15 -20 -25 -30 -35 -40 17 18 19 Frequency (GHz) 20 21 5th 10th 20th 30th 40th 50th 60th 70th 80th 90th 95th 0 -5 -10 -15 -20 -25 -30 -35 -40 17 18 19 Frequency (GHz) 20 21 5th 10th 20th 30th 40th 50th 60th 70th 80th 90th 95th Input Return Loss (dB) TriQuint Semiconductor Texas : Phone (972)994 8465 Fax (972)994 8504 Web: www.triquint.com 5 Product Data Sheet September 26, 2002 TGA9088A-SCC Mechanical Drawing GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor Texas : Phone (972)994 8465 Fax (972)994 8504 Web: www.triquint.com 6 Product Data Sheet September 26, 2002 TGA9088A-SCC Chip Assembly Diagram This configuration is for a self-bias logic pad current search with connections for bin G06. See Table V for alternate pad connections corresponding with the bins number listed. TABLE V PAD CONNECTIONS NUMBER 1 2 3 4 5 6 7 CONNECTION 1 None Pad 3 to Pad 4 Pad 2 to Pad 3 Pad 2 to Pad 4 Pad 1 to Pad 2 Pad 1 to Pad 3 Pad 1 to Pad 4 CONNECTION 2 None Pad 7 to Pad 8 Pad 6 to Pad 7 Pad 6 to Pad 8 Pad 5 to Pad 6 Pad 5 to Pad 7 Pad 5 to Pad 8 BINS G01 G02 G03 G04 G05 G06 G07 GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor Texas : Phone (972)994 8465 Fax (972)994 8504 Web: www.triquint.com 7 Product Data Sheet September 26, 2002 TGA9088A-SCC Assembly Process Notes Reflow process assembly notes: * * * * * Use AuSn (80/20) solder with limited exposure to temperatures at or above 300C. An alloy station or conveyor furnace with reducing atmosphere should be used. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere. Component placement and adhesive attachment assembly notes: * * * * * * * Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical. Interconnect process assembly notes: * * * * * Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. Discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire. Maximum stage temperature is 200C. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor Texas : Phone (972)994 8465 Fax (972)994 8504 Web: www.triquint.com 8 |
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