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| Advance Product Information July 22, 2004 12.5Gb/s Modulator Driver Amplifier Metro and Long Haul Applications TGA4802-EPU Key Features and Performance * * * * * * * * * Frequency Range: DC - 25 GHz Single-ended Input / Output 15 dB Small Signal Gain 18 GHz Small Signal Bandwidth Wide Drive Range (3V to 7V) 15ps Edge Rates (20/80) Power Dissipation 1.2 Watts 0.25um pHEMT 2MI Technology Die Size: 3.3 x 2.0 x 0.1 mm (0.131 x 0.79 x 0.004 inches) Description The TriQuint TGA4802 is part of a series of optical driver amplifiers suitable for a variety of driver applications. The TGA4802 is a medium power wideband AGC amplifier MMIC die that typically provides 15dB small signal gain with 10dB AGC range. RF ports are DC coupled enabling the user to customize system corner frequencies. The TGA4802 is an excellent choice for 12.5Gb/s optical modulator driver applications. The TGA4802 has demonstrated capability to amplify a 2V input signal to 7Vpp saturated. The TGA4802 requires off-chip decoupling, a DC block and a bias tee. The TGA4802 is available in die form. Primary Applications * Mach-Zehnder Modulator Driver for Metro and Long Haul Measured Performance TGA4802 Fixtured Data Vd(Rfout)=6V, Id=170mA, (Pdc=1.2W) Vout=7Vpp, Vin = 2Vpp Scale: 2V/div, 20ps/div 12.5Gb/s Vout=7Vpp Vin=2V Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 1 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com Advance Product Information TABLE I MAXIMUM RATINGS 1/ SYMBOL Vd July 22, 2004 TGA4802EPU PARAMETER POSITIVE SUPPLY VOLTAGE Drain Voltage at RF output POSITIVE SUPPLY CURRENT VALUE 7V NOTES 2/ Id Pd Drain Current POWER DISSIPATION NEGATIVE GATE 200 mA 1.4 W 2/ 2/, 3/ Vg Ig Voltage Gate Current CONTROL GATE 0 V to -3 V 5 mA Vctrl Ictrl Voltage Gate Current RF INPUT Vd/2 to -3 V 5 mA 4/ PIN TCH TM Sinusoidal Continuous Wave Power OPERATING CHANNEL TEMPERATURE MOUNTING TEMPERATURE (30 SECONDS) 23 dBm 150 0C 320 C -65 to 150 0C 0 5/, 6/ TSTG STORAGE TEMPERATURE Notes: 1/ These ratings represent the maximum operable values for the device. 2/ Assure the combination of Vd and Id does not exceed maximum power dissipation rating. 3/ Assure Vctrl never exceeds Vd during bias on and off sequences, and normal operation. 4/ When operated at this bias condition with a base plate temperature of 700C, the median life is reduced. 5/ Junction operating temperature will directly affect the device median time to failure (MTTF). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. 6/ These ratings apply to each individual FET. TABLE II DC PROBE TEST (TA = 25 C, nominal) NOTES 1/ 1/ SYMBOL |VBVGS| |VBVGD| MIN 11 11 LIMITS MAX 30 30 UNITS V V Notes: 1 VBVGS and VBVDS are negative. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 2 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com Advance Product Information TABLE III RF SPECIFICATIONS (TA = 25C Nominal) Bias Conditions: Vd = 7V Id = 170 mA July 22, 2004 TGA4802EPU NOTE TEST MEASUREMENT CONDITIONS MIN VALUE TYP 18 UNITS MAX GHz dB SMALL SIGNAL BW 1/ SMALL-SIGNAL GAIN MAGNITUDE INPUT RETURN LOSS MAGNITUDE OUTPUT RETURN LOSS MAGNITUDE SATURATED OUTPUT POWER EYE AMPLITUDE 2 - 10 GHz 12 - 18 GHz 2 - 14 GHz 14 10 1/ 10 dB 1/ 2 - 14 GHz 12 dB 2/ 3/ 2 - 12 GHz 22 dBm 2/, 3/ Vd(RFout) = 6V Vd(RFout) = 5V Vd(RFout) = 4V 7.0 6.0 5.0 5 15 Vpp 2/, 4/ 2/, 4/ ADDITIVE JITTER RISE TIME (20/80) ps ps Notes: 1/ RF Probe Bias: V+ = 8 V, adjust Vg1 to achieve Id = 80 mA, Vctrl = +1.5 V 2/ Verified by design, TGA4802 assembled onto an evaluation platform as shown on page 9 then tested using the application circuit and bias procedure detailed on pages 7 and 8. 3/ Vin = 2 V, Data Rate = 12.5 Gb/s, Vctrl and Vg are adjusted for maximum output. 4/ Computed using RSS Method where Jpp_additive = SQRT(Jpp_out2 - Jpp_in2) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 3 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com Advance Product Information July 22, 2004 TGA4802EPU TABLE IV THERMAL INFORMATION* PARAMETER RJC Thermal Resistance (channel to backside of carrier) TEST CONDITIONS Vd (RF out) = 7 V ID = 170 mA Pdiss = 1.2 W TCH (oC) 110 RTJC (qC/W) 32.7 TM (HRS) 4.2 E+7 Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo Carrier at 70C baseplate temperature. Worst case condition with no RF applied, 100% of DC power is dissipated. Thermal transfer is conducted thru the bottom of the TGA4802 into the mounting carrier. Design the mounting interface to assure adequate thermal transfer to the base plate. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 4 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com Advance Product Information July 22, 2004 TGA4802EPU Measured Fixtured Data Bias Conditions: Vd = 7V, Id= 170mA TGA4802EPU - Fixtured Data Cable Cal - Includes Fixture Losses 20 10 0 IRL -10 -20 -30 -40 0.045 2.043 4.041 8.038 10.04 12.03 14.03 16.03 18.03 20.03 22.03 24.02 26.02 28.02 30.02 6.04 Gain ORL Gain and RL Frequency (GHz) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 5 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com Advance Product Information July 22, 2004 TGA4802EPU Mechanical Drawing " ' A $ !A&( '%'A&# " " ' A ! $ " ! % A ! % # "#"A$" ("#A"& ! $ (!'A"& #"&A & % A A " A $ $ # A % ! ' # ! A ! " " " $ A " Vv)AAvyyvrrAvpur Uuvpxr)A A# 8uvArqtrAAiqAhqAqvrvAhrAuAAprrAsAiqAhq 8uvAvrAyrhpr)AAA$ A! 7qAhqAAE AAAAAASAADAAAAAAAAAAA 7qAhqAAE!AAAAAAWpyAAAAAAAAAAAA 7qAhqAAE"AAAAAAWAAAAAAAAAAAAAAAA 7qAhqAAE#AAAAAASAAPAAAAAAAAA 7qAhqAAE$AAAAAAWpyAhAAA 7qAhqAAE%AAAAAAWtAAAAAAAAAAAAA $AA $A%AA% AA $A#AA% "%%AA 'A #AA# $$AA $$A%AA% AA $A#AA% $AA $A%AA% GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 6 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com Advance Product Information July 22, 2004 TGA4802EPU TGA4802 Application Circuit V+ (No Connection) C4 C5 VDT VCTRL C6 2 3 VD(RFout) 4 Bias Tee (PSPL 5545) TGA4802 RF(in) DC Block (PSPL 5509) RF(out) 1 6 VG C1 C2 C3 Notes: Recommended Components are detailed on page 9. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 7 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com Advance Product Information July 22, 2004 TGA4802EPU Bias Procedure for 7V Output Bias ON Bias OFF 1. Disable the RF source (PPG) 1. Disable the output of the PPG 2. Set VdT=0V Vctrl=0V and Vg=0V 2. Set Vctrl=0V 3. Set Vg=-1.5V 3. Set VdT=0V 4. Increase VdT to 7V observing Id. 4. Set Vg=0V - Assure Id=0mA 5. Set Vctrl=+1.0V - Id should still be 0mA 6. Make Vg more positive until Idd=170mA. - Typical value for Vg is -0.2V 7. Measure V+, adjust VdT such that V+ is 6V. - This will set Vd(RFout) to approximately 6V. - Idd will increase slightly 8. Adjust Vg such that Idd=170mA. 9. Enable the RF source (PPG) - Set Vin=2V 10. Output Swing Adjust: Adjust Vctrl slightly positive to increase output swing or adjust Vctrl slightly negative to decrease the output swing. - Typical value for Vctrl is +1.0V for Vo=7V. 11. Crossover Adjust: Adjust: Vg slightly positive to push the crossover down or adjust Vg slightly negative to push the crossover up. - Typical value for Vg is -0.2V to center crossover with Vo=7V. Notes: 1. Assure Vctrl never exceeds Vd during Bias ON and Bias OFF sequences and during normal operation. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 8 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com Advance Product Information July 22, 2004 TGA4802EPU Evaluation Platform Assembly Diagram V+ VCTRL C6 C5 C4 RF(out) and Vd(RFout) RF(in) C1 VG C3 C2 Recommended Components: DESIGNATOR C1, C4 C2, C5 C3 C6 DESCRIPTION 1500pF Capacitor SLC 0.1uF Capacitor MLC Ceramic 10uF Capacitor MLC Ceramic 0.01 uF Capacitor MLC MANUFACTURER Presidio AVX AVX AVX PART NUMBER SL5050X7R1522H5 0603YC104KAT 0603YC102KAT 0603YC103KAT GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 9 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com Advance Product Information July 22, 2004 TGA4802EPU Evaluation Platform Assembly Notes Assembly Notes: Reflow Attachment: Use AuSn (80/20) solder with limited exposure to temperatures at or above 300C Use alloy station or conveyor furnace with reducing atmosphere No fluxes should be utilized Coefficient of thermal expansion matching is critical for long-term reliability Storage in dry nitrogen atmosphere Adhesive Attachment: Organic attachment can be used in low-power applications Curing should be done in a convection oven; proper exhaust is a safety concern Microwave or radiant curing should not be used because of differential heating Coefficient of thermal expansion matching is critical Component Pickup and Placement: Vacuum pencil and/or vacuum collet preferred method of pick up Avoidance of air bridges during placement Force impact critical during auto placement Interconnect: Thermosonic ball bonding is the preferred interconnect technique Force, time, and ultrasonics are critical parameters Aluminum wire should not be used Discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire Maximum stage temperature: 200C Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 10 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com |
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