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| Advance Product Information October 13, 2003 10 Gb/s Single Ended to Differential Amplifier TGA2951-EPU Key Features and Performance * * * * * * * * * * 3dB Bandwidth: 9.5 GHz 21 dB Differential Gain Single Ended In, Differential Out Crossing Adjustment (XOVR) Output Level Adjust (OUTLVL) Up to 1.5 Vpp Differential Out Output Power Detector 0.25m 3MI pHEMT Technology Self Bias: VD = 5V, ID = 72 mA Chip dimensions: 1.00 x 1.10 x 0.1 mm (0.039 x 0.043 x 0.004 inches) Preliminary Measured Performance Bias Conditions: VD = 5V, ID = 72 mA 21 18 15 12 9 6 3 0 RF Out (+) S21 RF Out (-) S31 Primary Applications * OC-192/STM-64 Fiber Optic Systems Single Ended Gain (dB) Product Description The TriQuint TGA2951-EPU is a Single Ended to Differential Amplifier for OC-192/STM-64 Fiber Optic System receive chains. The TGA2951-EPU provides a Single ended to differential Conversion with gain. The part is designed using TriQuint's proven standard 0.25 um gate Power pHEMT production process. The TGA2951-EPU is 100% DC and RF tested on-wafer to ensure performance compliance. 0 2 4 6 8 10 12 14 Frequency (GHz) 16 18 20 10.7 Gb/s 70mVpp Input (N/C) Vadj Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 1 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com Advance Product Information October 13, 2003 TGA2951-EPU TABLE I MAXIMUM RATINGS 1/ SYMBOL V I + + PARAMETER Positive Supply Voltage Positive Supply Current Input Continuous Wave Power Power Dissipation Operating Channel Temperature Mounting Temperature (30 Seconds) Storage Temperature VALUE 5.5 V 84 mA 15 dBm 462 mW 150 C 320 C -65 to 150 C NOTES 2/ 2/ 2/ 2/, 3/ 4/, 5/ PIN PD TCH TM TSTG 1/ 2/ 3/ 4/ These ratings represent the maximum operable values for this device. Combinations of supply voltage, supply current, input power, and output power shall not exceed PD. When operated at this power dissipation with a base plate temperature of 70 C, the median life is 1 E+6 hours. Junction operating temperature will directly affect the device median time to failure (TM). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. These ratings apply to each individual FET. 5/ Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 2 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com Advance Product Information October 13, 2003 TGA2951-EPU TABLE II RF CHARACTERIZATION TABLE (TA = 25C, Nominal) Bias Conditions: VD = 5V, ID = 72 mA Parameter Differential Gain 3dB Bandwidth Small Signal Gain Delta Input Return Loss Output Return Loss (S22, S33) Insertion Phase Delta Group Delay Ripple Nominal Crossing Level Crossing Level Adjustment Output Adjustment Detector Output Output levels 0 - 650 Vpp S/E 1 - 9 GHz 1 - 9 GHz 1 - 9 GHz 1 - 9 GHz Reference to 1 GHz Over Output Operating Range Conditions 1 GHz Typical 21 9.5 0.25 15 15 180 2 4 50 10 15 0 - 150 Units dB GHz dB dB dB deg ps % % dB mV Note: Table II lists the RF Characteristics of typical devices as determined by fixtured measurements. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 3 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com Advance Product Information October 13, 2003 TGA2951-EPU Preliminary Measured Performance Bias Conditions: VD = 5V, ID = 72 mA 21 18 15 12 9 6 3 0 RF Out (+) S21 RF Out (-) S31 Single Ended Gain (dB) 0 0 -5 2 4 6 8 10 12 14 Frequency (GHz) 16 18 20 RF Out (+) S22 RF Out (-) S33 RF In Return Loss (dB) -10 -15 -20 -25 -30 0 2 4 6 8 10 12 14 16 18 20 Frequency (GHz) 200 180 160 Group Delay (ps) 140 120 100 80 60 40 20 0 0 2 4 6 8 10 12 Frequency (GHz) 14 16 18 20 Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 4 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com Advance Product Information October 13, 2003 TGA2951-EPU Preliminary Measured Performance Bias Conditions: VD = 5V, ID = 72 mA 0 -5 -10 -15 -20 -25 -30 -50 deg C -25 deg C 0 deg C 25 deg C 75 deg C Input Retun Loss (dB) 0 20 2 4 6 8 10 12 14 Frequency (GHz) 16 18 20 Single Ended Gain (dB) 15 -50 deg C -25 deg C 0 deg C 25 deg C 75 deg C 10 5 0 -5 0 2 4 6 8 10 12 14 Frequency (GHz) 16 18 20 0 Positive Output Return Loss (dB) -5 -10 -15 -20 -25 -30 -50 deg C -25 deg C 0 deg C 25 deg C 75 deg C 0 2 4 6 8 10 12 14 Frequency (GHz) 16 18 20 Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 5 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com Advance Product Information October 13, 2003 TGA2951-EPU Typical Fixtured Performance Bias Conditions: 10.7 Gb/s & 0 - 3 V Vadj with constant 70mVpp Input 0.0V (N/C) Oadj 2V Oadj 100mV / Div 100mV / Div 2.5V Oadj 3.0V Oadj 100mV / Div 100mV / Div Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 6 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com Advance Product Information October 13, 2003 TGA2951-EPU Mechanical Drawing A#" %A# %(A!# %($A!& (#A# !$#A A # " A % $ $ % A ! ! ( $ A " % A " ( A ( $ A # ! $ A Vv)AAvyyvrrAvpur Uuvpxr)AA A#ArsrrprAy 8uvArqtrAAiqAhqAqvrvAhrAuAAprrAsAhq 8uvAvrAyrhpr)AAA$ A! BI9ADTA768FTD9@APAAHHD8 7qAQhqAAE )AAAAASAADIAAAAAAAAAAAAAA('AA !"A#AA$ 7qAQhqAAE!)AAAAA9@UAAAAAAAAAAAAAAAA('AA('A#AA# 7qAQhqAAE")AAAAAS@AAAAAAAAAAAAAAAAA('AA('A#AA# 7qAQhqAAE#)AAAAAS@AAGWGAAAAAAAAA('AA('A#AA# 7qAQhqAAE$)AAAAA7GFA!AAAAAAAAAAAAA('AA('A#AA# 7qAQhqAAE%AAAAAA7GFA AAAAAAAAAAAAA('AA('A#AA# 7qAQhqAAE&AAAAAASAAPVUAAAAAAAA('AA !"A#AA$ 7qAQhqAAE'AAAAAASAAPVUAAAAAAAAA('AA !"A#AA$ 7qAQhqAAE(AAAAAAW9AAAAAAAAAAAAAAAAAA('AA('A#AA# 7qAQhqAAE 7qAQhqAAE AAAAYPWSAAAAAAAAAAAAA('AA('A#AA# AAAAP69EAAAAAAAAAAAAA('AA('A#AA# GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 7 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com Advance Product Information October 13, 2003 TGA2951-EPU Chip Assembly & Bonding Diagram DET REF REF LVL RF IN RF OUT + RF OUT - OADJ XOVR VD Note: RF ports are DC coupled GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 8 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com Advance Product Information October 13, 2003 TGA2951-EPU Output Level Detector 160 Delta Detector Voltage (V) 140 120 100 80 60 40 20 0 0 10.7Gb/s 2^31-1 PRBS 10.7Gb/s 2^7-1 PRBS 100 200 300 400 500 600 700 Output Amplitude (Vpp) 0.25 800mVpp CW 0.20 400mVpp CW 200mVpp CW Delta (Vdet - Vref) 0.15 0.10 0.05 0.00 0.0 0.5 1.0 1.5 2.0 2.5 3.0 Frequency (GHz) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 9 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com Advance Product Information October 13, 2003 TGA2951-EPU Assembly Process Notes Reflow process assembly notes: * * * * * Use AuSn (80/20) solder with limited exposure to temperatures at or above 300 C for 30 sec An alloy station or conveyor furnace with reducing atmosphere should be used. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere. Component placement and adhesive attachment assembly notes: * * * * * * * Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical. Interconnect process assembly notes: * * * * * Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. Devices with small pad sizes should be bonded with 0.0007-inch wire. Maximum stage temperature is 200 C. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 10 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com |
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