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| SUR12060 Ultra Fast Recovery Epitaxial Diodes Dimensions TO-247AC A C(TAB) C A C Dim. A B C D E F G H J K L M N Millimeter Min. Max. 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.4 1.65 1.0 10.8 4.7 0.4 1.5 5.49 6.2 2.13 4.5 1.4 11.0 5.3 0.8 2.49 Inches Min. Max. 0.780 0.819 0.610 0.140 0.170 0.212 0.065 0.040 0.426 0.185 0.016 0.087 0.800 0.845 0.640 0.144 0.216 0.244 0.084 0.177 0.055 0.433 0.209 0.031 0.102 A=Anode, C=Cathode, TAB=Cathode VRSM V 600 VRRM V 600 SUR12060 Symbol IFRMS IFAVM IFRM Test Conditions TVJ=TVJM TC=70oC; rectangular, d=0.5 tp<10us; rep. rating, pulse width limited by TVJM TVJ=45oC t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine Maximum Ratings 100 120 tbd 600 660 540 600 1800 1800 1450 1500 -40...+150 150 -40...+150 Unit A IFSM TVJ=150oC TVJ=45oC A I2t TVJ=150oC A2s TVJ TVJM Tstg Ptot Md Weight TC=25oC Mounting torque o C 357 0.8...1.2 6 W Nm g SUR12060 Ultra Fast Recovery Epitaxial Diodes Symbol Test Conditions TVJ=25oC; VR=VRRM TVJ=25oC; VR=0.8.VRRM TVJ=125oC; VR=0.8.VRRM IF=70A; TVJ=150oC TVJ=25oC For power-loss calculations only TVJ=TVJM Characteristic Values typ. max. 3 0.75 20 1.12 1.3 0.85 3.5 0.35 0.25 35 Unit IR mA V V m K/W VF VTO rT RthJC RthCK RthJA trr IRM IF=1A; -di/dt=200A/us; VR=30V; TVJ=25oC _ VR=350V; IF=80A; -diF/dt=200A/us; L<0.05uH; TVJ=100 C o 35 17 50 21 ns A FEATURES * International standard package JEDEC TO-247AC * Planar passivatd chips * Very short recovery time * Extremely low switching losses * Low IRM-values * Soft recovery behaviour APPLICATIONS * Antiparallel diode for high frequency switching devices * Antisaturation diode * Snubber diode * Free wheeling diode in converters and motor control circuits * Rectifiers in switch mode power supplies (SMPS) * Inductive heating and melting * Uninterruptible power supplies (UPS) * Ultrasonic cleaners and welders ADVANTAGES * High reliability circuit operation * Low voltage peaks for reduced protection circuits * Low noise switching * Low losses * Operating at lower temperature or space saving by reduced cooling SUR12060 Ultra Fast Recovery Epitaxial Diodes 150 A 125 IF Qr 100 T V J =150C 7 T = 100C C VJ V = 300V 6R 5 4 3 2 T VJ =25C IF =140A IF = 70A IF = 35A 80 A T V J = 100C 70 V R = 300V IR M 60 50 40 IF =140A IF = 70A IF = 35A 75 50 25 0 0.0 T V J =100C 30 20 10 A/ s 1000 -diF /dt 0 0 200 400 600 A/ s 1000 800 -diF /dt 1 0 100 0.5 1.0 V VF 1.5 F ig. 1 F orward current I F versus V F F ig. 2 R everse recovery charge Q r versus -diF /dt 240 ns 220 trr 200 T V J = 100C V R = 300V F ig. 3 P eak reverse current I R M versus -diF /dt 60 V 50 V FR 40 tfr V FR T V J = 100C IF = 100A 1.4 3.0 s 2.5 tfr 2.0 1.5 1.0 0.5 1.2 Kf 1.0 Qr 0.8 IR M 180 160 I F =140A I F = 70A I F = 35A 30 20 10 0.6 140 0.4 0 50 100 T VJ C 150 0 200 400 600 A/ s 1000 800 -diF /dt 0 0 200 400 600 800 diF /dt 0.0 1000 A/ s F ig. 4 Dynamic parameters Q r, I R M versus T VJ 1 K/W F ig. 5 R ecovery time trr versus -diF /dt F ig. 6 P eak forward voltage V F R and tfr versus diF /dt D=0.7 0.5 Z thJC 0.1 0.3 0.2 0.01 0.05 S ingle P ulse 0.01 0.001 DS E I 120-06 0.01 0.1 1s t 10 F ig. 7 T ransient thermal resistance junction to case at various duty cycles |
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