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| SUM40N05-19L New Product Vishay Siliconix N-Channel 55-V (D-S), 175_C MOSFET, Logic Level FEATURES PRODUCT SUMMARY V(BR)DSS (V) 55 rDS(on) (W) 0.019 @ VGS = 10 V 0.025 @ VGS = 4.5 V ID (A) 40 35 D TrenchFETr Power MOSFET D 175_C Junction Temperature APPLICATIONS D Automotive - Full Injection Systems - Wipers - Door Modules D TO-263 DRAIN connected to TAB G DS Top View Ordering Information: SUM40N05-19L G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current, Single Pulse Avalanche Energy, Single Pulse Power Dissipation Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25_C TA = 25_Cc TC = 25_C TC = 100_C Symbol VDS VGS ID IDM IAS EAS PD TJ, Tstg Limit 55 "20 40 28 80 30 45 65a 3.1b - 55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient (PCB Mount)b Junction-to-Case Notes: a. b. See SOA curve for voltage derating. Surface Mounted on FR4 Board, t v 10 sec. www.vishay.com Symbol RthJA RthJC Limit 40 2.3 Unit _C/W Document Number: 72386 S-31922--Rev. A, 15-Sep-03 1 SUM40N05-19L Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 250 mA VDS = VGS, IDS = 250 mA VDS = 0 V, VGS = "20 V VDS = 55 V, VGS = 0 V Zero Gate Voltage Drain Current g On-State Drain Currenta IDSS ID(on) VDS = 55 V, VGS = 0 V, TJ = 125_C VDS = 55 V, VGS = 0 V, TJ = 175_C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 20 A Drain-Source On-State Drain Source On State Resistancea rDS( ) DS(on) VGS = 10 V, ID = 20 A, TJ = 125_C VGS = 10 V, ID = 20 A, TJ = 175_C VGS = 4.5 V, ID = 15 A Forward Transconductancea gfs VDS = 15 V, ID = 20 A 0.020 50 40 0.0155 0.019 0.033 0.040 0.025 S W 55 1.0 2.0 3.0 "100 1 50 250 A m mA V nA Symbol Test Condition Min Typ Max Unit Dynamicb Input Capacitance Output Capacitance Reversen Transfer Capacitance Total Gate Chargec Gate-Source Chargec Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf VDD = 25 V, RL = 0.3 W ID ] 35 A, VGEN = 10 V, RG = 2.5 W f = 1.0 MHz VDS = 25 V, VGS = 10 V, ID = 35 A , , VGS = 0 V, VDS = 25 V, f = 1 MHz 885 185 80 10.5 4 4.8 5.0 5 18 20 100 8 30 30 150 ns W 13 nC pF Gate-Drain Chargec Gate Resistance Turn-On Delay Rise Timec Turn-Off Delay Timec Fall Timec Timec Source-Drain Diode Ratings and Characteristics (TC = 25_C)b Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge Is ISM VSD trr IRM(REC) Qrr IF = 35 A, di/dt = 100 A/ms , m IF = 35 A, VGS = 0 V 1.0 25 1.5 0.019 35 80 1.5 40 2.5 0.05 A V ns A mC Notes: a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com 2 Document Number: 72386 S-31922--Rev. A, 15-Sep-03 SUM40N05-19L New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 100 VGS = 10 thru 6 V 80 5V I D - Drain Current (A) 60 4V 40 I D - Drain Current (A) 60 125_C 40 80 100 TC = - 55_C 25_C Transfer Characteristics 20 3V 20 0 0 2 4 6 8 10 VDS - Drain-to-Source Voltage (V) 0 0 2 4 6 8 VGS - Gate-to-Source Voltage (V) Transconductance 60 50 g fs - Transconductance (S) 40 30 20 10 0 0 20 40 60 80 100 TC = - 55_C r DS(on) - On-Resistance ( ) 0.03 0.04 On-Resistance vs. Drain Current 25_C 125_C VGS = 4.5 V 0.02 VGS = 10 V 0.01 0.00 0 20 40 60 80 100 ID - Drain Current (A) 1500 ID - Drain Current (A) 20 VDS = 25 V ID = 35 A Capacitance Gate Charge 1200 C - Capacitance (pF) Ciss 900 V GS - Gate-to-Source Voltage (V) 15 10 600 Coss 300 Crss 0 11 22 5 0 0 33 44 55 0 10 20 30 40 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Document Number: 72386 S-31922--Rev. A, 15-Sep-03 www.vishay.com 3 SUM40N05-19L Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 2.4 2.0 r DS(on) - On-Resistance (W) (Normalized) 1.6 1.2 0.8 0.4 0.0 - 50 On-Resistance vs. Junction Temperature VGS = 10 V ID = 20 A I S - Source Current (A) 100 Source-Drain Diode Forward Voltage TJ = 150_C 10 TJ = 25_C - 25 0 25 50 75 100 125 150 175 1 0 0.3 0.6 0.9 1.2 1.5 TJ - Junction Temperature (_C) VSD - Source-to-Drain Voltage (V) 70 Drain Source Breakdown vs. Junction Temperature 66 V (BR)DSS (V) ID = 10 mA 62 58 54 50 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (_C) www.vishay.com 4 Document Number: 72386 S-31922--Rev. A, 15-Sep-03 SUM40N05-19L New Product THERMAL RATINGS Vishay Siliconix 50 Drain Current vs. Case Temperature 200 100 Safe Operating Area Limited by rDS(on) 10 ms 40 I D - Drain Current (A) I D - Drain Current (A) 100 ms 10 1 ms 10 ms 1 TC = 25_C Single Pulse dc, 100 ms 30 20 10 0 0 25 50 75 100 125 150 175 TC - Case Temperature (_C) 0.1 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Normalized Thermal Transient Impedance, Junction-to-Case 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 Square Wave Pulse Duration (sec) 10 -1 1 Document Number: 72386 S-31922--Rev. A, 15-Sep-03 www.vishay.com 5 |
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