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| Semiconductor STJ828EF P-Channel Enhancement-Mode MOSFET Description * High speed switching application. * Analog switch application. Features * -2.5V Gate drive. * Low threshold voltage : Vth = -0.5~ -1.5V. * High speed. Ordering Information Type NO. STJ828EF Marking J8 Package Code SOT-523F Outline Dimensions unit : mm 1.600.1 0.880.1 1 1.600.1 1.000.1 3 2 0.25~0.30 +0.1 0.68 -0.05 0~0.1 1.110.05 PIN Connections 1. Gate 2. Source 3. Drain 1 KST-4014-000 STJ828EF Absolute maximum ratings Characteristic Drain-Source voltage Gate-Source voltage DC Drain current Drain Power dissipation Channel temperature Storage temperature range (Ta=25C) Symbol VDS VGSS ID PD Tch Tstg Ratings -20 7 -50 150 150 -55~150 Unit V V mA mW C C Electrical Characteristics Characteristic Drian-Source breakdown voltage Gate-Threshold voltage Drain cut-off current Gate leakage current Drain-Source on-resistance Forward transfer admittance Input capacitance Output capacitance Reverse Transfer capacitance Turn-on time Turn-off time (Ta=25C) Symbol BVDSS Vth IDSS IGSS RDS(ON) Yfs Ciss Coss Crss tON tOFF Test Condition ID=-100A, VGS=0 ID=-0.1mA, VDS=-3V VDS=-20V, VGS=0 VGS=7V, VDS=0 VGS=-2.5V, ID=-10mA VDS=-3V, ID=-10mA VDS=-3V, VGS=0, f=1MHz VDS=-3V, VGS=0, f=1MHz VDS=-3V, VGS=0, f=1MHz VDD=-3V, ID=-10mA VGEN=0~-2.5V VDD=-3V, ID=-10mA VGEN=0~-2.5V Min. Typ. Max. -20 -0.5 -1.5 -1 1 40 15 10.4 8.4 2.8 0.15 0.13 Unit V V A A mS pF pF pF *. Switching Time Test Circuit = 2 KST-4014-000 STJ828EF Electrical Characteristic Curves Fig1 ID - VDS Fig2 ID - VDS Fig3 IDR - VDS Fig4 ID - VGS 100 - Fig5 Yfs - ID Fig6 C - VDS 3 KST-4014-000 STJ828EF Fig7 VDS(on) - ID Fig8 t - ID - Fig9 PD - Ta 4 KST-4014-000 |
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