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STFV4N150
N-channel 1500V - 5 - 4A - TO-220FH Very high voltage PowerMESHTM Power MOSFET
General features
Type STFV4N150

VDSS 1500V
RDS(on) <7
ID 4A
Pw 40W
Avalanche ruggedness Gate charge minimized Very low intrinsic capacitances High speed switching Fully plastic TO-220 package Creepage distance path is > 4mm
1 2 3
TO-220FH
Description
Using the well consolidated high voltage MESH OVERLAYTM process, STMicroelectronics has designed an advanced family of Power MOSFETs with outstanding performances. The strengthened layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics. The creepage path is what makes this package unique from TO-220FP. The creepage distance path between each lead and between the leads and the heatsink has been increased to >4.0mm, making this package met all stringent safety norms in high voltage applications.
Internal schematic diagram
Applications
Switching application
Order codes
Part number STFV4N150 Marking FV4N150 Package TO-220FH Packaging Tube
March 2007
Rev 4
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Contents
STFV4N150
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................. 6
3 4 5
Test circuit
................................................ 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
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STFV4N150
Electrical ratings
1
Electrical ratings
Table 1.
Symbol VDS VDGR VGS ID (1) ID IDM
(2)
Absolute maximum ratings
Parameter Drain-source voltage (VGS = 0) Drain-gate voltage (RGS = 20 k) Gate- source voltage Drain current (continuous) at TC = 25C Drain current (continuous) at TC = 100C Drain current (pulsed) Total dissipation at TC = 25C Derating factor Value 1500 1500 30 4 2.5 12 40 0.32 2500 -55 to 150 Unit V V V A A A W W/C V C
PTOT
VISO Tj Tstg
Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1s; TC=25C) Operating junction temperature Storage temperature
1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area
Table 2.
Symbol Rthj-case Rthj-amb
Thermal resistance
Parameter Thermal resistance junction-case Max Thermal resistance junction-ambient Max Value 3.12 62.5 Unit C/W C/W
Table 3.
Symbol IAR EAS
Avalanche data
Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) Single pulse avalanche energy (starting Tj = 25C, ID = IAR, VDD = 50V) Value 4 350 Unit A mJ
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Electrical characteristics
STFV4N150
2
Electrical characteristics
(TCASE=25C unless otherwise specified) Table 4.
Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on)
On/off states
Parameter Drain-source breakdown voltage Zero gate voltage Drain current (VGS = 0) Gate-body leakage current (VDS = 0) Gate Threshold Voltage Static drain-source on resistance Test conditions ID = 1mA, VGS = 0 VDS = Max rating VDS = Max rating,TC = 125C VGS = 30V VDS = VGS, ID = 250A VGS = 10V, ID = 2A 3 4 5 Min. 1500 10 500 100 5 7 Typ. Max. Unit V A A nA V
Table 5.
Symbol gfs (1) Ciss Coss Crss Qg Qgs Qgd
1.
Dynamic
Parameter Test conditions Min. Typ. 3.5 1300 120 12 30 10 9 50 Max. Unit S pF pF pF nC nC nC
Forward transconductance VDS = 30V , ID = 2A Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge VDS = 25V, f = 1MHz, VGS = 0 VDD = 600V, ID = 4A, VGS = 10V (see Figure 15)
Pulsed: Pulse duration = 300 s, duty cycle 1.5%.
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STFV4N150
Electrical characteristics
Table 6.
Symbol td(on) tr td(off) tf
Switching times
Parameter Turn-on delay time Rise time Turn-off-delay time Fall time Test conditions VDD = 750V, ID = 2A, RG = 4.7, VGS = 10V (see Figure 14) Min. Typ. 35 30 45 45 Max. Unit ns ns ns ns
Table 7.
Symbol ISD ISDM
(1)
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 4A, VGS = 0 ISD = 4A, di/dt = 100A/s VDD = 45V (see Figure 19) ISD = 4A, di/dt = 100A/s VDD = 45V, Tj = 150C (see Figure 19) 510 3 12 650 4 12.6 Test conditions Min Typ. Max 4 12 2 Unit A A V ns C A ns C A
VSD (2) trr Qrr IRRM trr Qrr IRRM
1. 2.
Pulse width limited by safe operating area. Pulsed: Pulse duration = 300 s, duty cycle 1.5%.
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Electrical characteristics
STFV4N150
2.1
Figure 1.
Electrical characteristics (curves)
Safe operating area Figure 2. Thermal impedance
Figure 3.
Output characterisics
Figure 4.
Transfer characteristics
Figure 5.
Transconductance
Figure 6.
Static drain-source on resistance
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STFV4N150 Figure 7. Gate charge vs gate-source voltage Figure 8.
Electrical characteristics Capacitance variations
Figure 9.
Normalized gate threshold voltage vs temperature
Figure 10. Normalized on resistance vs temperature
Figure 11. Source-drain diode forward characteristics
Figure 12. Normalized BVDSS vs temperature
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Electrical characteristics Figure 13. Maximum avalanche energy vs temperature
STFV4N150
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STFV4N150
Test circuit
3
Test circuit
Figure 15. Gate charge test circuit
Figure 14. Switching times test circuit for resistive load
Figure 16. Test circuit for inductive load Figure 17. Unclamped inductive load test switching and diode recovery times circuit
Figure 18. Unclamped inductive waveform
Figure 19. Switching time waveform
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Package mechanical data
STFV4N150
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
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STFV4N150
Package mechanical data
TO-220FH (Fully plastic High voltage) MECHANICAL DATA
DIM. MIN. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 L8 L9 15.9 9 14.5 2.4 28.6 9.8 3.4 16.4 9.3 15 0.626 0.354 0.570 0.094 4.4 2.5 2.5 0.45 0.75 1.3 1.3 4.95 2.4 10 16 30.6 10.6 1.126 0.385 0.134 0.645 0.366 0.590 mm TYP. MAX. 4.6 2.7 2.75 0.7 1 1.8 1.8 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.051 0.051 0.195 0.094 0.393 0.630 1.204 0.417 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.070 0.070 0.204 0.106 0.409
P011W
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Revision history
STFV4N150
5
Revision history
Table 8.
Date 07-Jul-2005 06-Jun-2006 28-Jun-2006 06-Mar-2007
Revision history
Revision 1 2 3 4 First Release New template, inerted new value on Absolute maximum ratings The document has been reformatted Typo mistake on page 1 Changes
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STFV4N150
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