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SemiWell Semiconductor Bi-Directional Triode Thyristor
Features
Repetitive Peak Off-State Voltage : 600V R.M.S On-State Current ( IT(RMS)= 12 A ) High Commutation dv/dt Isolation Voltage ( VISO = 1500V AC )

STF12A60
UL : E228720
Symbol
2.T2

3.Gate
1.T1
General Description
This device is fully isolated package suitable for AC switching application, phase control application such as fan speed and temperature modulation control, lighting control and static switching relay. This device is approved to comply with applicable requirements by Underwriters Laboratories Inc.
TO-220F
1
2
3
Absolute Maximum Ratings
Symbol
VDRM IT(RMS) ITSM I2 t PGM PG(AV) IGM VGM VISO TJ TSTG
( TJ = 25C unless otherwise specified ) Condition Ratings
600 TC = 79 C One Cycle, 50Hz/60Hz, Peak, Non-Repetitive 12 119/130 71 5.0 0.5 2.0 10 A.C. 1 minute 1500 - 40 ~ 125 - 40 ~ 150 2.0
Parameter
Repetitive Peak Off-State Voltage R.M.S On-State Current Surge On-State Current I2 t Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Current Peak Gate Voltage Isolation Breakdown Voltage(R.M.S.) Operating Junction Temperature Storage Temperature Mass
Units
V A A A2 s W W A V V C C g
Aug, 2003. Rev. 2
copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
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STF12A60
Electrical Characteristics
Symbol Items
Repetitive Peak Off-State Current Peak On-State Voltage Non-Trigger Gate Voltage Critical Rate of Rise Off-State Voltage at Commutation Holding Current Thermal Impedance Junction to case TJ = 125 C, VD = 1/2 VDRM TJ = 125 C, [di/dt]c = -6.0 A/ms, VD=2/3 VDRM Gate Trigger Voltage VD = 6 V, RL=10 Gate Trigger Current VD = 6 V, RL=10
Conditions
VD = VDRM, Single Phase, Half Wave TJ = 125 C IT = 20 A, Inst. Measurement
Ratings Min.
0.2 10
Typ.
20
Max.
2.0 1.4 30 30 30 1.5 1.5 1.5 3.3
Unit
IDRM VTM I+GT1 I -GT1 I -GT3 V+GT1 V-GT1 V-GT3 VGD (dv/dt)c IH Rth(j-c)
mA V
mA
V
V
V/
mA C/W
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STF12A60
Fig 1. Gate Characteristics Fig 2. On-State Voltage
10
1
VGM (10V)
On-State Current [A]
10
2
Gate Voltage [V]
PGM (5W) PG(AV) (0.5W) 25
10
0
TJ = 125 C
10
1
o
IGM (2A)
TJ = 25 C
10
0
o
10
-1
VGD (0.2V)
1
10
10
2
10
3
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Gate Current [mA]
On-State Voltage [V]
Fig 3. On State Current vs. Maximum Power Dissipation
16 14
Fig 4. On State Current vs. Allowable Case Temperature
130
Power Dissipation [W]

360
2
12 10 8 6 4 2 0
= 180 o = 150 o = 120 = 90 = 60 = 30
o o o
o
Allowable Case Temperature [ oC]
120
110
: Conduction Angle
100
90
= 30
2
o o
= 60
8 10 12
360
80
: Conduction Angle
= 90 o = 120o = 150 o = 180
14
o
0
2
4
6
8
10
12
14
70
0
2
4
6
RMS On-State Current [A]
RMS On-State Current [A]
Fig 5. Surge On-State Current Rating ( Non-Repetitive )
200
Fig 6. Gate Trigger Voltage vs. Junction Temperature
10
Surge On-State Current [A]
150
VGT (t C)
o
o
60Hz
100
VGT (25 C)
V
1
_ GT3
V V
+ GT1 _ GT1
50
50Hz
0 0 10
10
1
10
2
0.1 -50
0
50
100
o
150
Time (cycles)
Junction Temperature [ C]
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STF12A60
Fig 7. Gate Trigger Current vs. Junction Temperature
10
10
Fig 8. Transient Thermal Impedance
1
I I
+ GT1 _ GT1
Transient Thermal Impedance [ C/W]
IGT (25 C)
IGT (t C)
o
o
o
1
I
0.1 -50
_ GT3
0
50
100
o
150
0.1 -2 10
10
-1
10
0
10
1
10
2
Junction Temperature [ C]
Time (sec)
Fig 9. Gate Trigger Characteristics Test Circuit
10
10
10

6V
A

RG
6V
A

RG
6V
A
V
V
V
RG
Test Procedure
Test Procedure
Test Procedure
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STF12A60
TO-220F Package Dimension mm Typ. Inch Typ.
Dim. A B C D E F G H I J K L M N O
Min. 10.4 6.18 9.55 13.47 6.05 1.26 3.17 1.87 2.57
Max. 10.6 6.44 9.81 13.73 6.15 1.36 3.43 2.13 2.83
Min. 0.409 0.243 0.376 0.530 0.238 0.050 0.125 0.074 0.101
Max. 0.417 0.254 0.386 0.540 0.242 0.054 0.135 0.084 0.111
2.54 5.08 2.51 1.25 0.45 0.6 3.7 3.2 1.5 2.62 1.55 0.63 1.0 0.099 0.049 0.018 0.024
0.100 0.200 0.103 0.061 0.025 0.039 0.146 0.126 0.059
1 2
F B
A E
H
I
1 2
C L 1 D 2 3 J K M
G
1. T1 2. T2 3. Gate
N O
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STF12A60
TO-220F Package Dimension, Forming mm Typ. Inch Typ.
Dim. A B C D E F G H I J K L M N O P
Min. 10.4 6.18 9.55 8.4 6.05 1.26 3.17 1.87 2.57
Max. 10.6 6.44 9.81 8.66 6.15 1.36 3.43 2.13 2.83
Min. 0.409 0.243 0.376 0.331 0.238 0.050 0.125 0.074 0.101
Max. 0.417 0.254 0.386 0.341 0.242 0.054 0.135 0.084 0.111
2.54 5.08 2.51 1.25 0.45 0.6 5.0 3.7 3.2 1.5 2.62 1.55 0.63 1.0 0.099 0.049 0.018 0.024
0.100 0.200 0.103 0.061 0.025 0.039 0.197 0.146 0.126 0.059
1 2
F B
A E
H
I
1 2
C L 1 2 3 N J K O P M
G D
1. T1 2. T2 3. Gate
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