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DISCRETE POWER DIODES and THYRISTORS
DATA BOOK
D-500
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Bulletin I25171/B
ST333S SERIES
INVERTER GRADE THYRISTORS Stud Version
Features
All diffused design Center amplifying gate Guaranteed high dv/dt Guaranteed high di/dt High surge current capability Low thermal impedance High speed performance
330A
Typical Applications
Inverters Choppers Induction heating All types of force-commutated converters
Major Ratings and Characteristics
Parameters
IT(AV) @ TC IT(RMS) ITSM @ 50Hz @ 60Hz I2t @ 50Hz @ 60Hz V DRM /V RRM tq range TJ
ST333S
330 75 518 11000 11520 605 550 400 to 800 10 to 30 - 40 to 125
Units
A C A A A KA2s KA2s V s C
case style TO-209AE (TO-118)
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ST333S Series
ELECTRICAL SPECIFICATIONS Voltage Ratings
Voltage Type number Code V DRM /V RRM , maximum repetitive peak voltage V
ST333S 04 08 400 800
VRSM , maximum non-repetitive peak voltage V
500 900
I DRM /I RRM max.
@ TJ = TJ max.
mA
50
Current Carrying Capability
Frequency
180 el 50Hz 400Hz 1000Hz 2500Hz Recovery voltage Vr Voltage before turn-on Vd Rise of on-state current di/dt Case temperature Equivalent values for RC circuit 840 650 430 140 50 V DRM 50 50
o
ITM 180 el 600 450 230 60 50 50 75 1280 1280 1090 490 50 V DRM 50
o
ITM 100s 1040 910 730 250 50 75 5430 2150 1080 400 50 V DRM 50
ITM
Units
4350 1560 720 190 50 75 V A/s C A
10 / 0.47F
10 / 0.47F
10 / 0.47F
On-state Conduction
Parameter
I T(AV) Max. average on-state current @ Case temperature I T(RMS) Max. RMS on-state current I TSM Max. peak, one half cycle, non-repetitive surge current
ST333S
330 75 518 11000 11520 9250 9700
Units
A C
Conditions
180 conduction, half sine wave
DC @ 63C case temperature t = 10ms A t = 8.3ms t = 10ms t = 8.3ms t = 10ms t = 8.3ms KA2s t = 10ms t = 8.3ms KA2s No voltage reapplied 100% VRRM reapplied No voltage reapplied 100% VRRM reapplied Sinusoidal half wave, Initial TJ = TJ max
I2 t
Maximum I2t for fusing
605 550 430 390
I 2 t
Maximum I2t for fusing
6050
t = 0.1 to 10ms, no voltage reapplied
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ST333S Series
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Fig. 3 - On-state Power Loss Characteristics
Fig. 4 - On-state Power Loss Characteristics
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ST333S Series
Fig. 5 - Maximum Non-repetitive Surge Current
Fig. 6 - Maximum Non-repetitive Surge Current
Fig. 7 - On-state Voltage Drop Characteristics
Fig. 8 - Thermal Impedance ZthJC Characteristic
Fig. 9 - Reverse Recovered Charge Characteristics
Fig. 10 - Reverse Recovery Current Characteristics
D-507
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ST333S Series
Fig. 11 - Frequency Characteristics
Fig. 12 - Frequency Characteristics
Fig. 13 - Frequency Characteristics
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ST333S Series
Fig. 14 - Maximum On-state Energy Power Loss Characteristics
Fig. 15 - Gate Characteristics
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ST333S Series
On-state Conduction
Parameter
V TM Max. peak on-state voltage voltage V T(TO)2 High level value of threshold voltage r r
t1
ST333S
1.51 0.91 0.92 0.58
Units
Conditions
ITM= 1040A, TJ = TJ max, t = 10ms sine wave pulse
p
V T(TO)1 Low level value of threshold
V
(16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. (I > x IT(AV)), TJ = TJ max. (16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. (I > x IT(AV)), TJ = TJ max.
Low level value of forward slope resistance m 0.58 600 1000 mA High level value of forward slope resistance Maximum holding current Typical latching current
t2
IH IL
T J = 25C, I T > 30A T J = 25C, V A= 12V, Ra = 6, I G = 1A
Switching
Parameter
di/dt Max. non-repetitive rate of rise of turned-on current t
d
ST333S
1000 1.0 Min 10 Max 30
Units
A/s
Conditions
TJ = TJ max, VDRM = rated VDRM ITM = 2 x di/dt TJ= 25C, VDM = rated VDRM, ITM = 50A DC, t = 1s
p
Typical delay time
s
Resistive load, Gate pulse: 10V, 5 source TJ = TJ max, ITM = 550A, commutating di/dt = 40A/s VR = 50V, t = 500s, dv/dt: see table in device code
p
t
q
Max. turn-off time
Blocking
Parameter
dv/dt IRRM IDRM Maximum critical rate of rise of off-state voltage Max. peak reverse and off-state leakage current
ST333S
500 50
Units
V/s mA
Conditions
TJ = TJ max. linear to 80% VDRM, higher value available on request TJ = TJ max, rated V DRM/V RRM applied
Triggering
Parameter
PGM Maximum peak gate power
ST333S
60 10 10 20
Units
W A
Conditions
TJ = TJ max, f = 50Hz, d% = 50 TJ = TJ max, t 5ms
p
PG(AV) Maximum average gate power IGM +VGM -VGM IGT VGT IGD VGD Max. peak positive gate current Maximum peak positive gate voltage Maximum peak negative gate voltage Max. DC gate current required to trigger Max. DC gate voltage required to trigger Max. DC gate current not to trigger Max. DC gate voltage not to trigger
V 5 200 3 20 0.25 mA
TJ = TJ max, t 5ms
p
TJ = 25C, VA = 12V, Ra = 6 V mA V TJ = TJ max, rated VDRM applied
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ST333S Series
Thermal and Mechanical Specifications
Parameter
TJ T
stg
ST333S
-40 to 125 -40 to 150 0.10 0.03 48.5 (425)
Units
C
Conditions
Max. junction operating temperature range Max. storage temperature range Max. thermal resistance, junction to case Max. thermal resistance, case to heatsink Mounting torque, 10%
RthJC RthCS T
DC operation K/W Nm (Ibf-in) g See Outline Table Mounting surface, smooth, flat and greased Non lubricated threads
wt
Approximate weight Case style
535
TO-209AE (TO-118)
RthJC Conduction
(The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC)
Conduction angle
180 120 90 60 30
Sinusoidal conduction Rectangular conduction Units
0.011 0.013 0.017 0.025 0.041 0.008 0.014 0.018 0.026 0.042 K/W
Conditions
TJ = TJ max.
Ordering Information Table
Device Code
ST
1
33
2
3
3
S
4
08
5
P
6
F
7
M
8
0
9 10
1 2 3 4 5 6 7 8 9
- Thyristor - Essential part number - 3 = Fast turn off - S = Compression bonding Stud - Voltage code: Code x 100 = VRRM (See Voltage Ratings table) - P = Stud base 3/4" 16UNF-2A M = Stud base metric threads M24 x 1.5 - Reapplied dv/dt code (for tq test condition) - tq code - 0 = Eyelet terminals (Gate and Aux. Cathode Leads) 1 = Fast-on terminals (Gate and Aux. Cathode Leads) dv/dt - tq combinations available
dv/dt (V/s) 20 10 CN 12 CM 15 CL t (s) q 18 CP 20 CK 25 -30 -50 DN DM DL DP DK --100 EN EM EL EP EK --200 -FM * FL * FP FK FJ -400 --HL HP HK HJ HH
3 = Threaded top terminal 3/8" 24UNF-2A 10 - Critical dv/dt: None = 500V/sec (Standard value) L = 1000V/sec (Special selection)
*Standard part number.
All other types available only on request.
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ST333S Series
Outline Table
CERAMIC HOUSING
22 (0.87) MAX. 4.3 (0.17) DIA. 4.5 (0.18) MAX.
9.
RED SILICON RUBBER RED CATHODE 24 5 (9 .6 5) 1 0 (0 .3 9) FLEXIBLE LEAD C.S. 50mm 2 (0.078 s.i.) 38 (1.50) MAX. DIA. 25 5 (1 0. 04 ) 2 4 5 (9 .6 5)
22 (0
5(
10.5 (0.41) NOM.
.86 )M
0 .3
WHITE GATE
7)
Fast-on Terminals AMP. 280000-1 REF-250
WHITE SHRINK RED SHRINK
2 7 .5 (1.08)
MAX.
SW 45
21 ( 0.82) M A X .
47 ( 1.85) M A X.
3/4"16 UNF-2A 49 (1.92) MAX. * FOR METRIC DEVICE: M24 X 1.5 - LENGHT SCREW 21 (0.83) MAX.
Case Style TO-209AE (TO-118)
All dimensions in millimeters (inches)
CERAMIC HOUSING
17 (0.67) DIA.
3/8"-24UNF-2A
2 5 (0 . 9 8 )
7 7 .5 ( 3 .0 5 )
8 0 .5 ( 3 .1 7 )
DIA. MAX.
IN .
MI
N.
38 (1.5)
4 7 (1 . 8 5)
2 1 ( 0 .8 3 )
Case Style TO-209AE (TO-118) with top thread terminal 3/8"
2 7 .5 ( 1. 0 8 )
All dimensions in millimeters (inches)
M A X.
SW 45
3/4"-16UNF-2A *
* FOR METRIC DEVICE: M24 x 1.5 - LENGHT SCREW 21 (0.83) MAX.
D-505
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M AX .
M AX .

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