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| SST4401 / MMST4401 / 2N4401 Transistors NPN Medium Power Transistor (Switching) SST4401 / MMST4401 / 2N4401 Features 1) BVCEO>40V (IC=1mA) 2) Complements the SST4403 / MMST4403 / PN4403. External dimensions (Unit : mm) SST4401 (1) 2.90.2 1.90.2 0.95 0.95 (2) 0.95 +0.2 -0.1 0.450.1 +0.2 1.3-0.1 2.40.2 0 to 0.1 0.2Min. Package, marking, and packaging specifications Part No. Packaging type Marking Code Basic ordering unit (pieces) SST4401 SST3 R2X T116 3000 MMST4401 SMT3 R2X T146 3000 2N4401 TO-92 - T93 3000 (1) (3) All terminals have the same dimensions +0.1 0.4 +0.1 ROHM : SST3 -0.05 0.15 -0.06 (1) Emitter (2) Base (3) Collector MMST4401 2.90.2 1.90.2 0.95 0.95 (2) 1.1+0.2 -0.1 0.80.1 (3) 1.6+0.2 -0.1 2.80.2 0 to 0.1 Absolute maximum ratings (Ta=25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC Limits 60 40 6 0.6 0.2 PC 0.35 0.625 150 -55 to +150 Unit V V V A W W C C ROHM : SMT3 EIAJ : SC-59 All terminals have the same +0.1 dimensions 0.3 to 0.6 2.3 0.4 +0.1 -0.05 0.15 -0.06 (1) Emitter (2) Base (3) Collector 2N4401 4.80.2 4.80.2 3.70.2 Collector power dissipation SST4401 MMST4401 SST4401 MMST4401 2N4401 (12.7Min.) 0.50.1. 2.5Min. ROHM : TO-92 EIAJ : SC-43 (1) (2) 5 (3) +0.3 2.5 -0.1 0.450.1 (1) Emitter (2) Base (3) Collector Junction temperature + + Tj Tstg Storage temperature Mounted on a 7 5 0.6mm CERAMIC SUBSTRATE Electrical characteristics (Ta=25C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) VBE(sat) Min. 60 40 6 - - - - - - 20 40 DC current transfer ratio hFE 80 100 40 Transition frequency Collector output capacitance Emitter input capacitance Delay time Rise time Storage time Fall time fT Cob Cib td tr tstg tf 250 - - - - - - Typ. - - - - - - - - - - - - - - - - - - - - - Max. - - - 0.1 0.1 0.4 0.75 0.95 1.2 - - - 300 - - 6.5 30 15 20 225 30 MHz pF pF ns ns ns ns - Unit V V V A A V V IC=100A IC=1mA IE=100A VCB=35V VEB=5V IC/IB=150mA/15mA IC/IB=500mA/50mA IC/IB=150mA/15mA IC/IB=500mA/50mA VCE=1V, IC=0.1mA VCE=1V, IC=1mA VCE=1V, IC=10mA VCE=1V, IC=150mA VCE=2V, IC=500mA VCE=10V, IE= -20mA, f=100MHz VCB=10V, f=100kHz VEB=0.5V, f=100kHz VCC=30V, VEB(OFF)=2V, IC=150mA, IB1=15mA VCC=30V, VEB(OFF)=2V, IC=150mA, IB1=15mA VCC=30V, IC=150mA, IB1=-IB2=15mA VCC=30V, IC=150mA, IB1=-IB2=15mA Conditions Rev.A 1/3 SST4401 / MMST4401 / 2N4401 Transistors Electrical characteristic curves 100 1000 Ta=25C COLLECTOR CURRENT : Ic(mA) 600 500 400 Ta=25C DC CURRENT GAIN : hFE VCE=10V 50 300 200 100 100 1V 0 0 10 5 COLLECTOR-EMITTER VOLTAGE : VCE(V) IB=0A 10 0.1 1.0 10 COLLECTOR CURRENT : Ic(mA) 100 1000 Fig.1 Grounded emitter output characteristics Fig.3 DC current gain vs. collector current() COLLECTOR EMITTER SATURATION VOLTAGE : VCE(sat)(V) Ta=25C IC / IB=10 0.3 1000 VCE=10V DC CURRENT GAIN : hFE Ta=125C 0.2 25C -55C 100 0.1 0 1.0 10 100 COLLECTOR CURRENT : Ic(mA) 1000 10 0.1 1.0 10 COLLECTOR CURRENT : Ic(mA) 100 1000 Fig.2 Collector-emitter saturation voltage vs. collector current Fig.4 DC current gain vs. collector current() BASE EMITTER SATURATION VOLTAGE : VBE(sat)(V) 1000 1.8 1.6 Ta=25C VCE=10V f=1kHz Ta=25C IC / IB=10 AC CURRENT GAIN : hFE 1.2 100 0.8 0.4 10 0.1 0 1.0 1.0 10 COLLECTOR CURRENT : Ic(mA) 100 1000 10 100 COLLECTOR CURRENT : Ic(mA) 1000 Fig.5 AC current gain vs. collector current Fig.6 Base-emitter saturation voltage vs. collector current Rev.A 2/3 SST4401 / MMST4401 / 2N4401 Transistors BASE EMITTER VOLTAGE : VBE(ON)(V) 1.8 1.6 TURN ON TIME : ton(ns) Ta=25C VCE=10V 1000 Ta=25C IC / IB=10 500 Ta=25C VCC=30V IC / IB=10 1.2 100 VCC=30V 10V 0.8 0.4 RISE TIME : tr(ns) 100 10 0 1 10 100 COLLECTOR CURRENT : Ic(mA) 1000 10 1.0 10 100 COLLECTOR CURRENT : Ic(mA) 1000 5 1.0 10 100 COLLECTOR CURRENT : Ic(mA) 1000 Fig.7 Grounded emitter propagation characteristics Fig.8 Turn-on time vs. collector current Fig.9 Rise time vs. collector current 1000 Ta=25C VCC=30V IC=10IB1=10IB2 1000 Ta=25C VCC=30V IC=10IB1=10IB2 100 Ta=25C f=1MHz STORAGE TIME : ts(ns) CAPACITANCE(pF) FALL TIME : tf(ns) Cib 100 100 10 Cob 10 1.0 10 100 COLLECTOR CURRENT : Ic(mA) 1000 10 1.0 10 100 COLLECTOR CURRENT : Ic(mA) 1000 1 0.1 1.0 10 REVERSE BIAS VOLTAGE(V) 100 Fig.10 Storage time vs. collector current Fig.11 Fall time vs. collector current Fig.12 Input / output capacitance vs. voltage 100 COLLECTOR-EMITTER VOLTAGE : VCE(V) 100MHz 250MHz 300MHz 200MHz 10 1 250MHz 0.1 CURRENT GAIN-BANDWIDTH PRODUCT(MHz) Ta=25C 1000 Ta=25C VCE=10V 100 1 10 100 COLLECTOR CURRENT : Ic(mA) 1000 10 1.0 10 100 COLLECTOR CURRENT : Ic(mA) 1000 Fig.13 Gain bandwidth product Fig.14 Gain bandwidth product vs. collector current Rev.A 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1 |
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