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| SSM6K08FU CategoryTOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)/Category SSM6K08FU High Speed Switching Applications * * * Small package Low on resistance: Ron = 105 m (max) (@VGS = 4 V) Ron = 140 m (max) (@VGS = 2.5 V) High-speed switching: ton = 16 ns (typ.) toff = 15 ns (typ.) Unit: mm Maximum Ratings (Ta = 25C) Characteristics Drain-Source voltage Gate-Source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDS VGSS ID IDP PD (Note1) Tch Tstg Rating 20 12 1.6 3.2 300 150 -55~150 Unit V V A mW C C JEDEC JEITA TOSHIBA 2-2J1D Note1: Mounted on FR4 board. 2 (25.4 mm 25.4 mm 1.6 t, Cu Pad: 0.32 mm 6) Figure 1. Weight: 6.8 mg (typ.) Marking Circuit (top view) 6 5 4 Equivalent 6 5 4 KDC 1 2 3 1 2 3 Handling Precaution When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. 1 2002-01-24 SSM6K08FU Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Drain-Source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Symbol IGSS V (BR) DSS V (BR) DSX IDSS Vth 1/2Yfs1/2 Test Condition VGS = 12 V, VDS = 0 ID = 1 mA, VGS = 0 ID = 1 mA, VGS = -12 V VDS = 20 V, VGS = 0 VDS = 3 V, ID = 0.1 mA VDS = 3 V, ID = 0.8 A ID = 0.8 A, VGS = 4 V Drain-Source ON resistance RDS (ON) ID = 0.8 A, VGS = 2.5 V ID = 0.8 A, VGS = 2.0 V Input capacitance Reverse transfer capacitance Output capacitance Switching time Turn-on time Turn-off time Ciss Crss Coss ton toff (Note2) (Note2) (Note2) (Note2) Min 3/4 20 12 3/4 0.5 2.0 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 Typ. 3/4 3/4 3/4 3/4 3/4 3/4 77 100 125 306 44 74 16 15 Max 1 3/4 3/4 1 1.2 3/4 105 140 210 3/4 3/4 3/4 3/4 3/4 pF pF pF ns mW Unit mA V mA V S VDS = 10 V, VGS = 0, f = 1 MHz VDS = 10 V, VGS = 0, f = 1 MHz VDS = 10 V, VGS = 0, f = 1 MHz VDD = 10 V, ID = 0.8 A, VGS = 0~2.5 V, RG = 4.7 W Note2: Pulse test Switching Time Test Circuit (a) Test Circuit OUT IN 0V RG 10 ms VDD = 10 V RG = 4.7 W D.U. < 1% = VIN: tr, tf < 5 ns Common Source Ta = 25C 10% (b) VIN 2.5 V 90% 2.5 V 0 VDD (c) VOUT VDD 10% 90% tr ton tf toff VDS (ON) Precaution Vth can be expressed as voltage between gate and source when low operating current value is ID = 100 mA for this product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires lower voltage than Vth. (Relationship can be established as follows: VGS (off) < Vth < VGS (on) ) Please take this into consideration for using the device. VGS recommended voltage of 2.5 V or higher to turn on this product. 2 2002-01-24 SSM6K08FU ID - VDS 4 Common Source 4 V 2.5 V 2.0 V Ta = 25C 1000 10000 VDS = 3 V Common Source ID - VGS Ta = 100C (mA) (A) 3 100 ID Drain current 1.6 V 1 1.5 V 1.4 V VGS = 1.3 V 0 0 0.5 1 1.5 2 Drain current 2 1.7 V ID 25C -25C 10 1 0.1 0.01 0 0.4 0.8 1.2 1.6 2 Drain-Source voltage VDS (V) Gate-Source voltage VGS (V) RDS (ON) - ID 200 Common Source Ta = 25C 160 400 ID = 0.8 A RDS (ON) - Ta Drain-Source on resistance RDS (ON) (mW) Drain-Source on resistance RDS (ON) (mW) VGS = 2.0 V Common Source 300 120 2.5 V 4.0 V 200 VGS = 2.0 V 2.5 V 80 100 4V 40 0 0 1 2 3 0 -25 0 25 50 75 100 125 150 Drain current ID (A) Ambient temperature Ta (C) RDS (ON) - VGS 400 ID = 0.8 A Common Source 4 Common Source VGS = 0 Ta = 25C IDR - VDS D IDR S Drain-Source on resistance RDS (ON) (mW) (A) 300 3 25C Ta = 100C 100 -25C Drain current 200 IDR G 2 1 0 0 2 4 6 8 10 12 0 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 Gate-Source voltage VGS (V) Drain-Source voltage VDS (V) 3 2002-01-24 SSM6K08FU Vth - Ta 2 VDS = 3 V ID = 0.1 mA Common Source 1.5 10 VDS = 3 V 3 Common Source Ta = 25C 1 0.3 0.1 0.03 0.01 1 0 -25 |Yfs| - ID Gate threshold voltage Vth 1 0.5 3 10 30 100 300 1000 3000 10000 Forward transfer admittance |Yfs| (S) (V) Drain current 0 25 50 75 100 125 150 ID (mA) Ambient temperature Ta (C) Switching Time 1000 Common Source VDD = 10 V 300 VGS = 0~2.5 V Rg = 4.7 W Ta = 25C 1000 500 C - VDS (ns) Capacitance C 100 (pF) Ciss 100 50 Coss Crss Common Source 10 VGS = 0 f = 1 MHz Ta = 25C 0.5 1 5 10 50 100 Switching time t 30 ton 10 tr tf toff 3 5 0.1 1 10 Drain-Source voltage VDS 30 100 30 1000 300 10000 (V) Drain current ID (mA) Dynamic Input Characteristic 10 Common Source VDD = 16 V 350 PD - Ta Mounted on FR4 board 300 (25.4 mm 25.4 mm 1.6 t, 2 Cu pad: 0.32 mm 6) Figure 1 (V) VGS (mW) PD Power dissipation 8 ID= 1.6 A Ta = 25C 6 250 200 150 100 50 Gate-Source voltage 4 2 0 0 2 4 6 8 0 0 20 40 60 80 100 120 140 160 Total gate charge Qg (nC) Ambient temperature Ta (C) 4 2002-01-24 SSM6K08FU Safe Operating Area 10 ID max (pulse) * 1 ms 10 ms 1 ID max (continuous) 0.3 DC operation Ta = 25C 0.1 Mounted on FR4 board 0.03 (25.4 mm 25.4 mm 1.6 t 2 Cu pad: 0.32 mm 6) Figure 1 3 (A) 100 ms Drain current ID 0.01 0.003 * Single non-repetitive pulsed Ta = 25C Curves must be derated linearly with increase in temperature. 0.3 1 3 10 30 100 0.001 0.1 Drain-Source voltage VDS (V) 0.4 mm 0.8 mm 25.4 mm 25.4 mm 1.6 t, 2 Cu Pad: 0.32 mm 6 Figure 1 5 2002-01-24 SSM6K08FU RESTRICTIONS ON PRODUCT USE 000707EAA * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 6 2002-01-24 |
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