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| polyfet rf devices SR706 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 300.0 Watts Push - Pull Package Style AR HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation 465 Watts Junction to Case Thermal Resistance o 0.35 C/W Maximum Junction Temperature o 200 C Storage Temperature o o -65 C to 150 C DC Drain Current Drain to Gate Voltage 70 V Drain to Source Voltage 70 V Gate to Source Voltage 20 V 27.0 A RF CHARACTERISTICS ( 300.0 WATTS OUTPUT ) SYMBOL Gps PARAMETER Common Source Power Gain Drain Efficiency Load Mismatch Tolerance MIN 13 55 20:1 TYP MAX UNITS dB % TEST CONDITIONS Idq = 1.20 A, Vds = 28.0 V, F = Idq = 1.20 A, Vds = 28.0 V, F = 225 MHz 225 MHz VSWR Relative Idq = 1.20 A, Vds = 28.0 V, F = 225 MHz ELECTRICAL CHARACTERISTICS ( EACH SIDE ) SYMBOL Bvdss Idss Igss Vgs gM Rdson Idsat Ciss Crss Coss PARAMETER Drain Breakdown Voltage Zero Bias Drain Current Gate Leakage Current Gate Bias for Drain Current Forward Transconductance Saturation Resistance Saturation Current Common Source Input Capacitance Common Source Feedback Capacitance Common Source Output Capacitance 1 7.2 0.16 42.00 300.0 18.0 192.0 MIN 65 6.0 1 7 TYP MAX UNITS V mA uA V Mho Ohm Amp pF pF pF TEST CONDITIONS Ids = 120.00 mA, Vgs = 0V Vds = 28.0 V, Vgs = 0V Vds = 0V Vgs = 30V Ids = 0.60 A, Vgs = Vds Vds = 10V, Vgs = 5V Vgs = 20V, Ids = 15.00 A Vgs = 20V, Vds = 10V Vds = 28.0 Vgs = 0V, F = 1 MHz Vds = 28.0 Vgs = 0V, F = 1 MHz Vds = 28.0 Vgs = 0V, F = 1 MHz POLYFET RF DEVICES REVISION 03/28/2001 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com SR706 POUT VS PIN GRAPH SR706 Pin vs Pout Freq=225Mhz; 400 350 CAPACITANCE VS VOLTAGE S1A 6 DICE CAPACITANCE 15 1000 Idq=.8A; Vds=28V Ciss 300 250 200 150 100 50 0 0 5 10 15 Pin in Watts 20 25 30 13 100 Pout 14 Coss P1dB = 260W Efficiency @300W = 60% Gain 12 Crss 11 10 0 5 10 VDS IN VOLTS 15 20 25 30 IV CURVE S1A 6 DIE IV 45 40 35 30 ID IN AMPS 25 20 15 10 5 ID & GM VS VGS 100.00 S1A 6 DIE ID & GM Vs VG Id Id in amps; Gm in mhos 10.00 gM 1.00 0 0 2 vg=2v 4 6 Vg=4v 8 10 12 VDSIN Vg=6v VOLTS vg=8v 14 0 16 18 vg=12v 20 0 2 4 6 8 Vgs in Volts 10 12 14 Zin Zout PACKAGE DIMENSIONS IN INCHES Tolerance .XX +/-0.01 .XXX +/-.005 inches POLYFET RF DEVICES REVISION 03/28/2001 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com |
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