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| SKKT 430, SKKH 430 Symbol Conditions Values Units SEMIPACK(R) 5 Thyristor / Diode Modules SKKT 430 SKKH 430 Features Typical Applications 1) 2) SKKT SKKH 1 15-10-2003 SCT (c) by SEMIKRON SKKT 430, SKKH 430 Fig. 1L Power dissipation per thyristor vs. on-state current Fig. 1R Power dissipation per thyristor vs. ambient temp. Fig. 2L Power dissipation per module vs. rms current Fig. 2R Power dissipation per module vs. case temp. Fig. 3L Power dissipation of two modules vs. direct current Fig. 3R Power dissipation of two modules vs. case temp. 2 15-10-2003 SCT (c) by SEMIKRON SKKT 430, SKKH 430 Fig. 4L Power dissipation of three modules vs. direct and rms current Fig. 4R Power dissipation of three modules vs. case temp. Fig. 6 Transient thermal impedance vs. time Fig. 7 On-state characteristics Fig. 8 Surge overload current vs. time 3 15-10-2003 SCT (c) by SEMIKRON SKKT 430, SKKH 430 Fig. 9 Gate trigger characteristics Dimensions in mm This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. 4 15-10-2003 SCT (c) by SEMIKRON |
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