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| SKiM 500GD063DM Absolute Maximum Ratings Symbol Conditions IGBT Values Units SKiM 5(R) IGBT Modules SKiM 500GD063DM Preliminary Data Inverse diode Characteristics Symbol Conditions IGBT min. typ. max. Units Features Typical Applications Inverse diode Thermal characteristics Temperature Sensor Mechanical data GD 1 24-11-2005 SEN (c) by SEMIKRON SKiM 500GD063DM Fig. 1 Output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Turn-on /-off energy = f (IC) Fig. 4 Turn-on /-off energy = f (RG) Fig. 5 Transfer characteristic Fig. 6 Gate charge characteristic 2 24-11-2005 SEN (c) by SEMIKRON SKiM 500GD063DM Fig. 7 Switching times vs. IC Fig. 8 Switching times vs. gate resistor RG Fig. 9 Transient thermal impedance of IGBT Zthp(j-s) = f (tp); D = tp/tc = tp * f Fig. 10 Transient thermal impedance of FWD Zthp(j-s) = f (tp); D = tp/tc = tp * f Fig. 11 CAL diode forward characteristic, incl. RCC'+ EE' Fig. 12 CAL diode peak reverse recovery current 3 24-11-2005 SEN (c) by SEMIKRON SKiM 500GD063DM Fig. 13 Typ. CAL diode recovered charge Dimensions in mm This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. 4 24-11-2005 SEN (c) by SEMIKRON |
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