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| SI7402DN New Product Vishay Siliconix N-Channel 12-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 12 FEATURES ID (A) 20 18.8 16.5 rDS(on) (W) 0.0057 @ VGS = 4.5 V 0.0067 @ VGS = 2.5 V 0.0085 @ VGS = 1.8 V D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile APPLICATIONS D PA Switch, Load Switch and Battery Switch for Portable Devices D Point-of-Load for 5-V or 3.3-V BUS Stepdown PowerPAK 1212-8 D 3.30 mm S 1 2 S 3 S 4 D 8 7 D 6 D 5 D G 3.30 mm G S N-Channel MOSFET Bottom View Ordering Information: SI7402DN-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 10 secs 12 "8 20 16 50 3.2 3.8 2.4 Steady State Unit V 13 10 A 1.3 1.5 1.0 -55 to 150 W _C THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Case (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 72646 S-32522--Rev. A, 08-Dec-03 www.vishay.com t v 10 sec Steady State Steady State Symbol RthJA RthJC Typical 24 65 1.9 Maximum 33 81 2.4 Unit _C/W C/W 1 SI7402DN Vishay Siliconix New Product MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "8 V VDS = 12 V, VGS = 0 V VDS = 12 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 20 A Drain-Source On-State Resistancea rDS(on) VGS = 2.5 V, ID = 18 A VGS = 1.8 V, ID = 1 A Forward Transconductancea Diode Forward Voltagea gfs VSD VDS = 10 V, ID = 20 A IS = 3.2 A, VGS = 0 V 50 0.0045 0.0053 0.0065 100 0.70 1.2 0.0057 0.0067 0.0085 S V W 0.45 0.85 "100 1 5 V nA mA A Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 2.3 A, di/dt = 100 A/ms VDD = 6 V, RL = 6 W ID ^ 1 A, VGEN = 4.5 V, Rg = 6 W VDS = 6 V, VGS = 4.5 V, ID = 20 A 36 4 9.5 1.8 35 65 110 60 40 55 100 165 90 80 ns W 55 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics VGS = 5 thru 2 V 40 I D - Drain Current (A) 1.5 V I D - Drain Current (A) 40 50 50 Transfer Characteristics 30 30 20 20 TC = 125_C 10 25_C -55_C 10 1V 0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) www.vishay.com 0 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 VGS - Gate-to-Source Voltage (V) Document Number: 72646 S-32522--Rev. A, 08-Dec-03 2 SI7402DN New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0.015 Vishay Siliconix On-Resistance vs. Drain Current 4000 3500 Capacitance Ciss r DS(on) - On-Resistance ( W ) 0.012 C - Capacitance (pF) 3000 2500 2000 1500 1000 500 Coss Crss 0.009 VGS = 1.8 V VGS = 2.5 V 0.006 0.003 VGS = 4.5 V 0.000 0 10 20 30 40 50 0 0 2 4 6 8 10 12 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) 5 V GS - Gate-to-Source Voltage (V) VDS = 6 V ID = 20 A Gate Charge 1.6 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 20 A 3 r DS(on) - On-Resistance (W) (Normalized) 4 1.4 1.2 2 1.0 1 0.8 0 0 5 10 15 20 25 30 35 40 Qg - Total Gate Charge (nC) 0.6 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 50 0.010 On-Resistance vs. Gate-to-Source Voltage r DS(on) - On-Resistance ( W ) 0.008 ID = 15 A 0.006 I S - Source Current (A) TJ = 150_C 10 0.004 TJ = 25_C 0.002 1 0.0 0.000 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 6 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 72646 S-32522--Rev. A, 08-Dec-03 www.vishay.com 3 SI7402DN Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.3 0.2 0.1 V GS(th) Variance (V) -0.0 -0.1 -0.2 -0.3 10 -0.4 -0.5 -50 0 0.01 ID = 250 mA 40 50 Single Pulse Power, Junction-to-Ambient Power (W) 30 20 -25 0 25 50 75 100 125 150 0.1 1 10 100 1000 TJ - Temperature (_C) Time (sec) 1000 Limited by rDS(on) Safe Operating Area 100 I D - Drain Current (A) 100 ms, 10 ms 10 1 ms 10 ms 1 TA = 25_C Single Pulse 100 ms 1s 10 s 0.1 dc, 100 s 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 1 Square Wave Pulse Duration (sec) 10-1 Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 65_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted t1 t2 10 100 600 www.vishay.com 4 Document Number: 72646 S-32522--Rev. A, 08-Dec-03 SI7402DN New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Duty Cycle = 0.5 Vishay Siliconix Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (sec) 10-1 1 Document Number: 72646 S-32522--Rev. A, 08-Dec-03 www.vishay.com 5 |
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