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| Si6913DQ New Product Vishay Siliconix Dual P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) -12 D TrenchFETr Power MOSFET ID (A) -5.8 -5.0 -4.4 rDS(on) (W) 0.021 @ VGS = -4.5 V 0.028 @ VGS = -2.5 V 0.037 @ VGS = -1.8 V APPLICATIONS D Load Switch D Battery Switch S1 S2 TSSOP-8 D1 S1 S1 G1 1 2 3 4 Top View Ordering Information: SI6913DQ-T1 D1 P-Channel MOSFET D2 P-Channel MOSFET D 8 D2 7 S2 6 S2 5 G2 G1 G2 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 10 secs -12 "8 -5.8 -4.6 -30 -1.0 1.14 0.73 Steady State Unit V -4.9 -3.9 A -0.7 0.83 0.53 -55 to 150 W _C THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 72368 S-31914--Rev. A, 15-Sep-03 www.vishay.com t v 10 sec Steady State Steady State Symbol RthJA RthJF Typical 86 124 52 Maximum 110 150 65 Unit _C/W C/W 1 Si6913DQ Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = -400 mA VDS = 0 V, VGS = "8 V VDS = -12 V, VGS = 0 V VDS = -12 V, VGS = 0 V, TJ = 70_C VDS = -5 V, VGS = -4.5 V VGS = -4.5 V, ID = -5.8 A Drain-Source On-State Resistancea rDS(on) VGS = -2.5 V, ID = -5.0 A VGS = -1.8 V, ID = -4.4 A Forward Transconductancea Diode Forward Voltagea gfs VSD VDS = -5 V, ID = -5.8 A IS = -1.0 A, VGS = 0 V -20 0.016 0.021 0.029 25 -0.61 -1.1 0.021 0.028 0.037 S V W -0.40 -0.9 "100 -1 -25 V nA mA A Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = -1.0 A, di/dt = 100 A/ms VDD = -6 V, RL = 6 W ID ^ -1 A, VGEN = -4.5 V, RG = 6 W f = 1.0 MHz VDS = -6 V, VGS = -4.5 V, ID = -5.8 A 18.5 2.7 5.0 4.6 45 80 130 80 65 70 120 200 120 100 ns W 28 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 30 VGS = 5 thru 2.5 V 30 2V 24 I D - Drain Current (A) Transfer Characteristics TC = -55_C 25_C 125_C 18 24 I D - Drain Current (A) 18 12 1.5 V 6 12 6 0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) www.vishay.com 0 0.0 0.5 1.0 1.5 2.0 2.5 VGS - Gate-to-Source Voltage (V) Document Number: 72368 S-31914--Rev. A, 15-Sep-03 2 Si6913DQ New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.10 r DS(on) - On-Resistance ( W ) 3500 3000 C - Capacitance (pF) 0.08 2500 2000 1500 1000 500 0 0 5 10 15 20 25 30 0 2 4 6 8 10 12 Crss Coss Ciss Vishay Siliconix Capacitance 0.06 VGS = 1.8 V VGS = 2.5 V 0.02 VGS = 4.5 V 0.00 0.04 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 6 V GS - Gate-to-Source Voltage (V) 5 4 3 2 1 0 0 5 10 15 20 25 30 Qg - Total Gate Charge (nC) VDS = 6 V ID = 5.8 A 1.60 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 5.8 A 1.40 r DS(on) - On-Resistance ( W) (Normalized) 1.20 1.00 0.80 0.60 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 30 TJ = 150_C r DS(on) - On-Resistance ( W ) 10 I S - Source Current (A) 0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0.1 0.0 0.00 0.3 0.6 0.9 1.2 1.5 0 On-Resistance vs. Gate-to-Source Voltage TJ = 25_C 1 ID = 5.8 A 1 2 3 4 5 6 7 8 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 72368 S-31914--Rev. A, 15-Sep-03 www.vishay.com 3 Si6913DQ Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 0.3 V GS(th) Variance (V) 0.2 0.1 0.0 -0.1 -0.2 -50 20 100 Single Pulse Power, Junction-to-Ambient 80 ID = 400 mA Power (W) 60 40 -25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 Time (sec) 1 10 TJ - Temperature (_C) 100 Safe Operating Area, Junction-to-Case Limited by rDS(on) 10 I D - Drain Current (A) 1 ms 10 ms 1 100 ms 0.1 1s 10 s dc TC = 25_C Single Pulse 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 - 4 10 - 3 10 - 2 10 - 1 1 Square Wave Pulse Duration (sec) Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 124_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted t1 t2 10 100 600 www.vishay.com 4 Document Number: 72368 S-31914--Rev. A, 15-Sep-03 Si6913DQ New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Vishay Siliconix Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 - 4 10 - 3 10 - 2 10 - 1 Square Wave Pulse Duration (sec) 1 10 Document Number: 72368 S-31914--Rev. A, 15-Sep-03 www.vishay.com 5 |
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