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| SI6413DQ New Product Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.010 @ VGS = -4.5 V -20 0.013 @ VGS = -2.5 V 0.016 @ VGS = -1.8 V D TrenchFETr Power MOSFET ID (A) -8.8 - 7.6 - 6.8 APPLICATIONS D Load Switch D PA Switch D Charger Switch S* TSSOP-8 D S S G 1 2 3 4 Top View D P-Channel MOSFET D 8D 7S 6S 5D G * Source Pins 2, 3, 6 and 7 must be tied common. SI6413DQ ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a _ Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS 10 secs -20 "8 - 8.8 Steady State Unit V -7.2 -5.7 -30 A -0.95 1.05 0.67 -55 to 150 W _C ID IDM IS PD TJ, Tstg -7.0 -1.35 1.5 1.0 THERMAL RESISTANCE RATINGS Parameter t v 10 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 72084 S-22384--Rev. A, 30-Dec-02 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 60 100 35 Maximum 83 120 45 Unit _C/W C/W 1 SI6413DQ Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = -400 mA VDS = 0 V, VGS = "8 V VDS = -16 V, VGS = 0 V VDS = -16 V, VGS = 0 V, TJ = 70_C VDS -5 V, VGS = -4.5 V VGS = -4.5 V, ID = -8.8 A Drain-Source On-State Resistancea rDS(on) VGS = -2.5 V, ID = -7.6 A VGS = -1.8 V, ID = -6.8 A Forward Transconductancea gfs VSD VDS = -15 V, ID = -8.8 A IS = -1.3 A, VGS = 0 V -20 0.008 0.010 0.013 45 -0.58 -1.1 0.010 0.013 0.016 S V W -0.40 -0.8 "100 -1 -10 V nA mA m A Symbol Test Condition Min Typ Max Unit Diode Forward Voltagea Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = -1.3 A, di/dt = 100 A/ms VDD = -10 V, RL = 10 W ID ^ -1 A, VGEN = -4.5 V, RG = 6 W VDS = -10 V, VGS = -5 V, ID = -8.8 A 69 9.5 15.5 55 120 305 160 90 85 200 470 250 150 ns 105 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 30 VGS = 5 thru 2 V 1.5 V 24 I D - Drain Current (A) I D - Drain Current (A) 24 30 Transfer Characteristics 18 18 12 12 TC = 125_C 6 25_C 0 0.0 6 1.0 V 0 0 1 2 3 4 5 -55 _C 1.0 1.2 1.4 1.6 0.2 0.4 0.6 0.8 VDS - Drain-to-Source Voltage (V) www.vishay.com VGS - Gate-to-Source Voltage (V) Document Number: 72084 S-22384--Rev. A, 30-Dec-02 2 SI6413DQ New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.030 r DS(on) - On-Resistance ( W ) 8000 Vishay Siliconix Capacitance C - Capacitance (pF) 0.024 6400 Ciss 4800 0.018 VGS = 1.8 V 0.012 VGS = 2.5 V 3200 Coss 0.006 VGS = 4.5 V 1600 Crss 0.000 0 6 12 18 24 30 0 0 4 8 12 16 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 5 V GS - Gate-to-Source Voltage (V) VDS = 10 V ID = 8.8 A 4 1.6 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 8.8 A 1.4 3 r DS(on) - On-Resistance (W) (Normalized) 28 42 56 70 1.2 2 1.0 1 0.8 0 0 14 Qg - Total Gate Charge (nC) 0.6 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 30 TJ = 150_C r DS(on) - On-Resistance ( W ) 10 I S - Source Current (A) 0.06 On-Resistance vs. Gate-to-Source Voltage 0.05 0.04 ID = 8.8 A 0.03 1 TJ = 25_C 0.02 0.01 0.1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 6 7 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 72084 S-22384--Rev. A, 30-Dec-02 www.vishay.com 3 SI6413DQ Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 60 Single Pulse Power, Junction-to-Ambient 50 0.2 V GS(th) Variance (V) Power (W) ID = 400 mA 0.0 40 30 20 -0.2 10 -0.4 -50 -25 0 25 50 75 100 125 150 0 10- 2 10- 1 1 Time (sec) 10 100 TJ - Temperature (_C) Safe Operating Area, Junction-to-Case 100 Limited by rDS(on) 1 ms 10 I D - Drain Current (A) 10 ms 1 100 ms 1s 0.1 TC = 25_C Single Pulse 10 s dc 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 100_C/W t1 t2 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 www.vishay.com 4 Document Number: 72084 S-22384--Rev. A, 30-Dec-02 SI6413DQ New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 Vishay Siliconix 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (sec) 1 10 Document Number: 72084 S-22384--Rev. A, 30-Dec-02 www.vishay.com 5 |
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