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| Si5475DC Vishay Siliconix P-Channel 12-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) () 0.031 @ VGS = --4.5 V --12 0.041 @ VGS = --2.5 V 0.054 @ VGS = --1.8 V ID (A) --7.6 --6.6 --5.8 S 1206-8 ChipFETt 1 D D D D S D D G G Marking Code BF XX Lot Traceability and Date Code D P-Channel MOSFET Bottom View Part # Code Ordering Information: SI5475DC-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Currenta Maximum Power Dissipationa Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)b, c TA = 25_C TA = 85_C TA = 25_C TA = 85_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 5 secs Steady State --12 8 Unit V --7.6 --3.5 20 --2.1 2.5 1.3 --55 to 150 260 --5.5 --3.9 --1.1 1.3 0.7 W A _C THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) t 5 sec Steady State Steady State Symbol RthJA RthJF Typical 40 80 15 Maximum 50 95 20 Unit _C/W C/ Notes a. Surface Mounted on 1" x 1" FR4 Board. b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 71324 S-21251--Rev. B, 05-Aug-02 www.vishay.com 1 Si5475DC Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = --I mA VDS = 0 V, VGS = 8 V VDS = --9.6 V, VGS = 0 V VDS = --9.6 V, VGS = 0 V, TJ = 85_C VDS --5 V, VGS = --4.5 V VGS = --4.5 V, ID = --5.5 A Drain-Source On-State Resistancea rDS(on) VGS = --2.5 V, ID = --4.8 A VGS = --1.8 V, ID = --2 A Forward Transconductancea Diode Forward Voltagea gfs VSD VDS = --5 V, ID = --5.2 A IS = --1.1 A, VGS = 0 V --20 0.027 0.035 0.045 19 --0.7 --1.2 0.031 0.041 0.054 S V --0.45 100 --1 --5 V nA mA A Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = --1.1 A, di/dt = 100 A/ms VDD = --6 V, RL = 6 ID --1 A, VGEN = --4.5 V, RG = 6 VDS = --6 V, VGS = --4.5 V, ID = --5.5 A 19 3.9 3.6 15 20 122 80 40 25 30 180 120 60 ns 29 nC Notes a. Pulse test; pulse width 300 ms, duty cycle 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 20 20 VGS = 5 thru 2.5 V 2V I D -- Drain Current (A) I D -- Drain Current (A) 15 16 Transfer Characteristics TC = --55_C 25_C 125_C 12 10 8 5 1V 0 0 1 2 3 1.5 V 4 4 5 0 0.0 0.5 1.0 1.5 2.0 2.5 VDS -- Drain-to-Source Voltage (V) www.vishay.com VGS -- Gate-to-Source Voltage (V) Document Number: 71324 S-21251--Rev. B, 05-Aug-02 2 Si5475DC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.10 r DS(on) -- On-Resistance ( ) 3000 2500 VGS = 1.8 V 0.06 VGS = 2.5 V C -- Capacitance (pF) 2000 1500 1000 500 Crss 0.00 0 5 10 ID -- Drain Current (A) 15 20 0 0 2 4 6 8 10 12 Coss Ciss Capacitance 0.08 0.04 0.02 VGS = 4.5 V VDS -- Drain-to-Source Voltage (V) Gate Charge 5 V GS -- Gate-to-Source Voltage (V) VDS = 6 V ID = 5.5 A 4 1.4 1.3 1.2 1.1 1.0 0.9 0.8 --50 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 5.5 A 3 2 1 0 0 5 10 15 20 Qg -- Total Gate Charge (nC) r DS(on) -- On-Resistance ( ) (Normalized) --25 0 25 50 75 100 125 150 TJ -- Junction Temperature (_C) Source-Drain Diode Forward Voltage 20 0.10 On-Resistance vs. Gate-to-Source Voltage I S -- Source Current (A) 10 TJ = 150_C r DS(on) -- On-Resistance ( ) 0.08 0.06 ID = 5.5 A 0.04 TJ = 25_C 0.02 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 VSD -- Source-to-Drain Voltage (V) VGS -- Gate-to-Source Voltage (V) Document Number: 71324 S-21251--Rev. B, 05-Aug-02 www.vishay.com 3 Si5475DC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.30 0.25 0.20 V GS(th) Variance (V) 0.15 0.10 0.05 --0.00 --0.05 --0.10 --0.15 --50 0 10 --3 10 Power (W) 40 ID = 1m A 30 50 Single Pulse Power 20 --25 0 25 50 75 100 125 150 10 --2 10 --1 1 10 100 600 TJ -- Temperature (_C) Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 --4 10 --3 10 --2 10 --1 1 Square Wave Pulse Duration (sec) Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 80_C/W 3. TJM -- TA = PDMZthJA(t) 4. Surface Mounted t1 t2 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 --4 10 --3 10 --2 10 --1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 4 Document Number: 71324 S-21251--Rev. B, 05-Aug-02 |
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